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Taiwan Semiconductor Corporation Produkte

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BZD27C91PHRUG
Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 90.5V
  • Tolerance: ±6.07%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 68V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager2.288
BZD27C33PHRVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±6.06%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 24V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager5.840
1N4743A B0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: DO-204AL, DO-41, Axial
Lager2.160
BZD27C33P RQG
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±6.06%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 24V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager7.984
1SMA5942HM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 51V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 70 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 38.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: DO-214AC, SMA
Lager3.280
1N4742G B0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 12V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 27.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 200°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: DO-204AL, DO-41, Axial
Lager3.120
TSZL52C6V8 RWG
Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 200MW, 5%, 1

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005
Paket: 1005 (2512 Metric)
Lager6.688
BZT52B11 RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 500MW, 2%, SO

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 90nA @ 8V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
Paket: SOD-123F
Lager7.888
BZX85C9V1 R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1300MW, 5%,

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 6.9V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: DO-204AL, DO-41, Axial
Lager3.232
BZV55B2V4 L1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 2.4V, 500MW, 2%, M

  • Voltage - Zener (Nom) (Vz): 2.4V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
Paket: DO-213AC, MINI-MELF, SOD-80
Lager7.152
BZX79C33 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 500MW, 5%, DO

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 23.1V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
Paket: DO-204AH, DO-35, Axial
Lager6.800
BZV55C15 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 500MW, 5%, MM

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 11V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
Paket: DO-213AC, MINI-MELF, SOD-80
Lager2.544
GBPC5008M T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC40-M
  • Supplier Device Package: GBPC40-M
Paket: 4-Square, GBPC40-M
Lager3.664
1N4745G
Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 16 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: -
Request a Quote
SK515BH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 5A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
SF1608G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager2.700
MBRAD8100H
Taiwan Semiconductor Corporation

8A, 100V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 198pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager13.485
PU1JLS
Taiwan Semiconductor Corporation

25NS, 1A, 600V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager60.000
BZT52C15K
Taiwan Semiconductor Corporation

SOD-523F, 200MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 15 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 11 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
Paket: -
Request a Quote
M3Z27VC-RRG
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 20 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
Paket: -
Lager9.000
ZM4747A
Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 22 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
Paket: -
Request a Quote
MBRF2035H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 35V 20A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 35 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
BZS55C4V3
Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

  • Voltage - Zener (Nom) (Vz): 4.3 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
Paket: -
Request a Quote
M3Z12VC
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 9 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
Paket: -
Request a Quote
BZT52B4V3S
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 4.3 V
  • Tolerance: ±2%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
Paket: -
Request a Quote
SRT15
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A TS-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
BZT55B24
Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 18 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
Paket: -
Request a Quote
TSM025NB04CR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 40V 24A/161A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN
Paket: -
Lager2.088
KBU807G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Paket: -
Lager1.491
KBU804G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 400V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
Paket: -
Lager1.500