Taiwan Semiconductor Corporation Produkte

BZD27C27PHM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±7.03%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paket: DO-219AB

TSZL52C11 RWG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 200MW, 5%, 10

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005

Paket: 1005 (2512 Metric)

TSZU52C5V6 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 150MW, 5%, 0

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

Paket: 0201 (0603 Metric)

BZV55B8V2 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 500MW, 2%, M

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paket: DO-213AC, MINI-MELF, SOD-80

MTZJ5V6SC R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.76V, 500MW, %, D

• Voltage - Zener (Nom) (Vz): 5.76V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

Paket: DO-204AG, DO-34, Axial

BZV55C13 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 26 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paket: DO-213AC, MINI-MELF, SOD-80

TS25P01G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

Paket: 4-SIP, TS-6P

DBL158GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
• Current - Reverse Leakage @ Vr: 2µA @ 1200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

Paket: 4-DIP (0.300", 7.62mm)

ABS15MHREG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

Paket: 4-SMD, Gull Wing

ABS15J REG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

Paket: 4-SMD, Gull Wing

TS4264CW50 RPG

Taiwan Semiconductor Corporation

IC REG LINEAR 5V 150MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

TS2938CS33 RLG

Taiwan Semiconductor Corporation

IC REG LINEAR 3.3V 500MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

SF2008PTH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

TSSD20L60SW

Taiwan Semiconductor Corporation

20A, 60V, TRENCH SCHOTTKY

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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BZS55C15-RAG

Taiwan Semiconductor Corporation

DIODE ZENER 15V 500MW 1206

• Voltage - Zener (Nom) (Vz): 15 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 11 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

Paket: -

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BZD27C120P

Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 120.5 V
• Tolerance: ±5.39%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 91 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

Paket: -

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ES1GFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

TSM680P06CI-C0G

Taiwan Semiconductor Corporation

MOSFET P-CH 60V 18A ITO220

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 17W (Tc)
• Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: -

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PU2BAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 33pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

BZT52C12K

Taiwan Semiconductor Corporation

SOD-523F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

Paket: -

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KBP307G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 3A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

Paket: -

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LL5818-L0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 1A MELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF
• Operating Temperature - Junction: -65°C ~ 125°C

Paket: -

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D2SB60

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 2A GBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

Paket: -

1PGSMA4750HR3G

Taiwan Semiconductor Corporation

DIODE ZENER 27V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: -

SFS1608GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

SMLWH

Taiwan Semiconductor Corporation

0.8A, 1000V, STANDARD RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

SK14BH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

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TS4K80-A

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A TS4K

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS4K
• Supplier Device Package: TS4K

Paket: -