Page 52 - Taiwan Semiconductor Corporation Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
1SMC5352 R7G	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 5000MW, %, DO Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 5W Impedance (Max) (Zzt): 2.5 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC)	Paket: DO-214AB, SMC	Lager2.048
1M130ZHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 130V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 700 Ohms Current - Reverse Leakage @ Vr: 5µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	Paket: DO-204AL, DO-41, Axial	Lager4.096
1M110ZHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 110V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 110V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 5µA @ 83.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	Paket: DO-204AL, DO-41, Axial	Lager6.960
BZX85C3V6 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.6V, 1300MW, 5%, Voltage - Zener (Nom) (Vz): 3.6V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 20µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	Paket: DO-204AL, DO-41, Axial	Lager2.624
BZY55B18 RYG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 500MW, 2%, 08 Voltage - Zener (Nom) (Vz): 18V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 100nA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	Paket: 0805 (2012 Metric)	Lager2.080
DBLS151G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	Paket: 4-SMD, Gull Wing	Lager2.016
DBLS105GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	Paket: 4-SMD, Gull Wing	Lager7.776
DBLS104GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	Paket: 4-SMD, Gull Wing	Lager7.456
1N4750G	Taiwan Semiconductor Corporation	DO-204AL (DO-41), 1000MW, 5%, SM Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	Paket: -	Request a Quote
BZY55C12	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	Paket: -	Request a Quote
BZV55C3V3	Taiwan Semiconductor Corporation	MMELF, 500MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	Paket: -	Request a Quote
1PGSMC5369-V7G	Taiwan Semiconductor Corporation	DIODE ZENER 5W DO214AB Voltage - Zener (Nom) (Vz): 51 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 27 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	Paket: -	Request a Quote
HER1008GH	Taiwan Semiconductor Corporation	DIODE ARRAY GP 1000V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Paket: -	Lager3.000
S1JFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager83.988
SRT12H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote
1PGSMA200ZHR3G	Taiwan Semiconductor Corporation	DIODE ZENER 200V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 200 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 1500 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 152 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: -	Lager6
MMBD3004	Taiwan Semiconductor Corporation	SOT-23, 350V, 0.225A, SWITCHING Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 225mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 240 V Capacitance @ Vr, F: 5pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote
1SMA4742	Taiwan Semiconductor Corporation	DIODE ZENER 12V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 9 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: -	Lager22.500
TUAU8MH	Taiwan Semiconductor Corporation	80NS, 8A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 43pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager18.000
1PGSMA4746HR3G	Taiwan Semiconductor Corporation	DIODE ZENER 18V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 13.7 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: -	Lager90
BZY55B3V3	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 2%, SMAL Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	Paket: -	Request a Quote
TQM300NB06DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/25A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Power - Max: 2.5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Paket: -	Lager15.000
TSM60NC165CI	Taiwan Semiconductor Corporation	600V, 24A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Paket: -	Request a Quote
TSD20H150CW	Taiwan Semiconductor Corporation	DIODE ARRAY SCHOT 20A TO263AB Diode Configuration: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	Paket: -	Lager6
RS2MFL	Taiwan Semiconductor Corporation	250NS, 2A, 1000V, FAST RECOVERY Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager29.940
BZD17C24P	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5.79% Power - Max: 800 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	Paket: -	Request a Quote
RTBS60M	Taiwan Semiconductor Corporation	500NS, 6A, 1000V, FAST RECOVERY Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: TBS	Paket: -	Lager5.289
BC337-25	Taiwan Semiconductor Corporation	TO-92, 50V, 0.8A, NPN BIPOLAR TR Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V Power - Max: 625 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Paket: -	Request a Quote