Page 3 - Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - Einzeln | Heisener Electronics
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Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - Einzeln

Aufzeichnungen 361
Page  3/13
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SD2406-Y(F)
Toshiba Semiconductor and Storage

TRANS NPN 80V 4A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
  • Current - Collector Cutoff (Max): 30µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
  • Power - Max: 25W
  • Frequency - Transition: 8MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager7.280
4A
80V
1.5V @ 300mA, 3A
30µA (ICBO)
120 @ 500mA, 5V
25W
8MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD1407A-Y(F)
Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
  • Power - Max: 30W
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager3.472
5A
100V
2V @ 400mA, 4A
100µA (ICBO)
120 @ 1A, 5V
30W
12MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5439(F)
Toshiba Semiconductor and Storage

TRANS NPN 450V 8A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager6.288
8A
450V
1V @ 640mA, 3.2A
100µA (ICBO)
14 @ 1A, 5V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC3074-Y(Q)
Toshiba Semiconductor and Storage

TRANS NPN 50V 5A PW-MOLD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager7.808
5A
50V
400mV @ 150mA, 3A
1µA (ICBO)
120 @ 1A, 1V
1W
120MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SC3074-O(Q)
Toshiba Semiconductor and Storage

TRANS NPN 50V 5A 2-7B1A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.736
5A
50V
400mV @ 150mA, 3A
1µA (ICBO)
70 @ 1A, 1V
1W
120MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SC2705-O(TPE6,F)
Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO-92MOD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
Paket: TO-226-3, TO-92-3 Long Body
Lager3.376
50mA
150V
1V @ 1mA, 10mA
100nA (ICBO)
80 @ 10mA, 5V
800mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SC2705-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO-92MOD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
Paket: TO-226-3, TO-92-3 Long Body
Lager2.064
50mA
150V
1V @ 1mA, 10mA
100nA (ICBO)
80 @ 10mA, 5V
800mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
hot 2SA1887(F)
Toshiba Semiconductor and Storage

TRANS PNP 50V 10A TO220NIS

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 45MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager6.496
10A
50V
400mV @ 250mA, 5A
1µA (ICBO)
120 @ 1A, 1V
2W
45MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
hot 2SA1244-Y(Q)
Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
  • Power - Max: 1W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.048
5A
50V
400mV @ 150mA, 3A
1µA (ICBO)
120 @ 1A, 1V
1W
60MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
hot 2SA1242-Y(Q)
Toshiba Semiconductor and Storage

TRANS PNP 20V 5A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager74.520
5A
20V
1V @ 100mA, 4A
100nA (ICBO)
160 @ 500mA, 2V
1W
170MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SA1162S-Y, LF(D
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.376
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
TTA0002(Q)
Toshiba Semiconductor and Storage

TRANS PNP 160V 18A TO-3PL

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 18A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 180W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
Paket: TO-3PL
Lager6.304
18A
160V
2V @ 900mA, 9A
1µA (ICBO)
80 @ 1A, 5V
180W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
TTC0002(Q)
Toshiba Semiconductor and Storage

TRANS NPN 160V 18A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 18A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 180W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
Paket: TO-3PL
Lager5.424
18A
160V
2V @ 900mA, 9A
1µA (ICBO)
80 @ 1A, 5V
180W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
TTC012(Q)
Toshiba Semiconductor and Storage

TRANS NPN 375V 2A PW MOLD2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 375V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PW-MOLD2
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager3.824
2A
375V
1V @ 62.5mA, 500mA
10µA (ICBO)
100 @ 300mA, 5V
1.1W
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
PW-MOLD2
TTC008(Q)
Toshiba Semiconductor and Storage

TRANS NPN 285V 1.5A PW MOLD2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 285V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PW-MOLD2
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager3.264
1.5A
285V
1V @ 62.5mA, 500mA
10µA (ICBO)
80 @ 1mA, 5V
1.1W
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
PW-MOLD2
2SA1930(Q,M)
Toshiba Semiconductor and Storage

TRANS PNP 180V 2A TO220NIS

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager2.560
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
hot 2SC4793(F,M)
Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager3.664
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC6026CTGRTPL3
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paket: SC-101, SOT-883
Lager6.480
100mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
60MHz
150°C (TJ)
Surface Mount
SC-101, SOT-883
CST3
2SC3138-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN 200V 0.05A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
Paket: TO-236-3, SC-59, SOT-23-3
Lager2.112
50mA
200V
500mV @ 1mA, 10mA
100nA (ICBO)
120 @ 10mA, 3V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
TTA003,L1NQ(O
Toshiba Semiconductor and Storage

TRANS PNP 80V 3A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.080
3A
80V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SC6076(TE16L1,NV)
Toshiba Semiconductor and Storage

TRANS NPN 80V 3A PW MOLD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.304
3A
80V
500mV @ 100mA, 1A
1µA (ICBO)
180 @ 500mA, 2V
10W
150MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
2SA1588-O,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 100mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager5.152
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
100mW
200MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC2712-BL,LF
Toshiba Semiconductor and Storage

TRANSISTOR NPN 50V 150MA S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.256
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1832-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: SC-75, SOT-416
Lager6.000
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
2SA1832-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: SC-75, SOT-416
Lager3.504
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot TTC004B,Q
Toshiba Semiconductor and Storage

TRANS NPN 160V 1.5A TO126N

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
Paket: TO-225AA, TO-126-3
Lager18.000
1.5A
160V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
10W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
2SA1588-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 100mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager4.928
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 100mA, 1V
100mW
200MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC5200N(S1,E,S)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
Paket: TO-3P-3, SC-65-3
Lager5.648
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
2SC3324-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.880
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236
2SC5242-O(Q)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
Paket: TO-3P-3, SC-65-3
Lager8.448
15A
230V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
130W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)