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Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - Einzeln

Aufzeichnungen 361
Page  9/13
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC2655-Y(T6ND2,AF
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.712
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-Y(T6ND1,AF
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager6.272
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-Y(T6CN,A,F
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.312
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-Y(T6CANOFM
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.672
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-Y(HIT,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.360
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-Y(6MBH1,AF
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.040
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-O,F(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.744
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager6.928
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-O(ND2,AF)
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.752
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2655-O(ND1,AF)
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager4.592
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2482(T6TOJS,F,M
Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.136
100mA
300V
1V @ 1mA, 10mA
1µA (ICBO)
30 @ 20mA, 10V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2482(FJTN,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.488
100mA
300V
1V @ 1mA, 10mA
1µA (ICBO)
30 @ 20mA, 10V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2383-Y,T6KEHF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.088
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
60 @ 200mA, 5V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2383-Y(T6DNS,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.088
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
60 @ 200mA, 5V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2383-O,T6ALPF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.952
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
60 @ 200mA, 5V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2383-O(T6OMI,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.440
1A
160V
1.5V @ 50mA, 500mA
1µA (ICBO)
60 @ 200mA, 5V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,USNHF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.088
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,T6USNF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.072
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,T6KEHF(M
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager6.560
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.664
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,T6ASHF(J
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.816
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y,F(J
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.896
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6OMI,FM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.864
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6ND,AF
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.312
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6KMATFM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager6.288
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6FJT,FM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.472
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6FJT,AF
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.360
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6CN,A,F
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager3.712
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(T6CANOFM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager2.784
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-Y(MBSH1,FM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.680
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD