Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager23.076 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | ±20V | - | 270mW (Ta) | 1.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C
|
Paket: SC-101, SOT-883 |
Lager93.378 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 500mW (Ta) | 3.9 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA CST3C
|
Paket: SC-101, SOT-883 |
Lager96.636 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | ±20V | - | 500mW (Ta) | 3.6 Ohm @ 10mA, 4V | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A VESM
|
Paket: SOT-723 |
Lager160.662 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | - | - | - | 12.2pF @ 3V | - | - | 150mW (Ta) | 8 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV
|
Paket: 8-PowerVDFN |
Lager46.470 |
|
MOSFET (Metal Oxide) | 60V | 32A (Ta) | 6.5V, 10V | 4V @ 500µA | 49nC @ 10V | 3965pF @ 30V | ±20V | - | 1.6W (Ta), 63W (Tc) | 4.6 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 28A 8-SOP ADV
|
Paket: 8-PowerVDFN |
Lager120.000 |
|
MOSFET (Metal Oxide) | 60V | 28A (Ta) | 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | ±20V | - | 1.6W (Ta), 57W (Tc) | 5.9 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-TSON
|
Paket: 8-PowerVDFN |
Lager94.590 |
|
MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | ±20V | - | 700mW (Ta), 42W (Tc) | 2.7 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 23A 8TSON-ADV
|
Paket: 8-PowerVDFN |
Lager47.772 |
|
MOSFET (Metal Oxide) | 30V | 23A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | ±20V | - | 700mW (Ta), 22W (Tc) | 4.2 mOhm @ 11.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager35.610 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | ±20V | - | 60W (Tc) | 8.7 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON
|
Paket: 8-PowerVDFN |
Lager46.002 |
|
MOSFET (Metal Oxide) | 60V | 26A (Tc) | 6.5V, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | ±20V | - | 700mW (Ta), 42W (Tc) | 7.5 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A TSON
|
Paket: 8-PowerVDFN |
Lager26.586 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | ±20V | - | 700mW (Ta), 22W (Tc) | 8.9 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A
|
Paket: 6-WDFN Exposed Pad |
Lager28.572 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | - | 1W (Ta) | 23.1 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.4A TSM
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager29.310 |
|
MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4V, 10V | - | 2.5nC @ 15V | 280pF @ 15V | ±20V | - | 700mW (Ta) | 117 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N)
|
Paket: TO-3P-3, SC-65-3 |
Lager9.384 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 39A TO220-3
|
Paket: TO-220-3 Full Pack, Isolated Tab |
Lager7.296 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-247
|
Paket: TO-247-3 |
Lager7.632 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.5V @ 1.9mA | 85nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 12.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 100A TO220
|
Paket: TO-220-3 |
Lager7.120 |
|
MOSFET (Metal Oxide) | 80V | 100A (Ta) | 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | ±20V | - | 255W (Tc) | 3.2 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247
|
Paket: TO-247-3 |
Lager7.848 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 9.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220
|
Paket: TO-220-3 Full Pack, Isolated Tab |
Lager6.216 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | ±20V | - | 45W (Tc) | 3.8 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220
|
Paket: TO-247-3 |
Lager5.536 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 250 mOhm @ 6.9A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 148A TO220
|
Paket: TO-220-3 |
Lager12.930 |
|
MOSFET (Metal Oxide) | 100V | 148A (Ta) | 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | ±20V | - | 192W (Tc) | 4.8 mOhm @ 32.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager20.640 |
|
MOSFET (Metal Oxide) | 650V | 6A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 45W (Tc) | 1.11 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager72.000 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | Super Junction | 80W (Tc) | 430 mOhm @ 4.9A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 116A 8DSOP
|
Paket: 8-PowerWDFN |
Lager36.828 |
|
MOSFET (Metal Oxide) | 80V | 116A (Tc) | 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | ±20V | - | 800mW (Ta), 142W (Tc) | 4 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 15A 8-SOP
|
Paket: 8-PowerVDFN |
Lager44.208 |
|
MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | 4V @ 300µA | 11nC @ 10V | 1100pF @ 100V | ±20V | - | 1.6W (Ta), 57W (Tc) | 112 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 32A 8-SOP
|
Paket: 8-PowerVDFN |
Lager107.568 |
|
MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | ±20V | - | 1.6W (Ta), 61W (Tc) | 8.8 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8-SOP
|
Paket: 8-PowerVDFN |
Lager45.504 |
|
MOSFET (Metal Oxide) | 30V | 47A (Tc) | 4.5V, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | ±20V | - | 1.6W (Ta), 44W (Tc) | 3.2 mOhm @ 23.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 14A 8-SOP ADV
|
Paket: 8-PowerVDFN |
Lager59.136 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta) | 6.5V, 10V | 4V @ 200µA | 16nC @ 10V | 1300pF @ 30V | ±20V | - | 1.6W (Ta), 32W (Tc) | 14 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |