Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
|
Paket: TO-220-3 |
Lager3.248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
|
Paket: TO-220-3 |
Lager3.552 |
|
MOSFET (Metal Oxide) | 60V | 50A | - | - | 54nC @ 10V | - | - | - | - | 8.5 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.016 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.216 |
|
MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 2.2 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager48.000 |
|
MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 80W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.920 |
|
MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.432 |
|
MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager7.008 |
|
MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.9 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager3.488 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager5.168 |
|
MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 1.88 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager4.976 |
|
MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 30W (Tc) | 2.45 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 4A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager3.248 |
|
MOSFET (Metal Oxide) | 525V | 4A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager323.400 |
|
MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 30W (Tc) | 2 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.792 |
|
MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 25nC @ 10V | 1500pF @ 10V | ±20V | - | - | 9.7 mOhm @ 22.5A, 10V | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.552 |
|
MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 4V @ 1mA | 61nC @ 10V | 3110pF @ 10V | ±20V | - | 93W (Tc) | 18 mOhm @ 20A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.472 |
|
MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 17.5nC @ 10V | 1150pF @ 10V | ±20V | - | - | 10.8 mOhm @ 20A, 10V | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager3.968 |
|
MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | ±20V | - | 45W (Tc) | 100 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager5.840 |
|
MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 4V @ 1mA | 45nC @ 10V | 2600pF @ 25V | - | - | - | 330 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS
|
Paket: TO-220-3 Full Pack |
Lager5.904 |
|
MOSFET (Metal Oxide) | 450V | 16A | - | - | - | - | - | - | - | 270 mOhm @ 8A, 10V | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A TO220SIS
|
Paket: TO-220-3 Full Pack |
Lager7.680 |
|
MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | - | 2.2 Ohm @ 1.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 40A 3DP 2-7K1A
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.024 |
|
MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 29nC @ 10V | 1920pF @ 10V | ±20V | - | 47W (Tc) | 11 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.600 |
|
MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 17.5nC @ 10V | 1150pF @ 10V | ±20V | - | - | 10.8 mOhm @ 20A, 10V | - | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM
|
Paket: 3-SMD, Flat Leads |
Lager7.824 |
|
MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4V | 1V @ 1mA | - | 250pF @ 10V | ±8V | - | 500mW (Ta) | 158 mOhm @ 800mA, 4V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 8.3A PS-8
|
Paket: 8-SMD, Flat Lead |
Lager2.720 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | ±20V | - | 840mW (Ta) | 8.5 mOhm @ 4.2A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 21A SBD 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager3.456 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 20nC @ 10V | 1900pF @ 10V | ±20V | - | 700mW (Ta), 30W (Tc) | 9.9 mOhm @ 10.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager3.248 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | ±20V | - | 700mW (Ta), 27W (Tc) | 8 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 26A 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager4.256 |
|
MOSFET (Metal Oxide) | 30V | 26A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | ±20V | - | 700mW (Ta), 30W (Tc) | 6.4 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager3.584 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | ±20V | - | 700mW (Ta), 22W (Tc) | 16.9 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager3.696 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | ±20V | - | 700mW (Ta), 30W (Tc) | 8.3 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON
|
Paket: 8-VDFN Exposed Pad |
Lager4.976 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | ±20V | - | 700mW (Ta), 30W (Tc) | 8.3 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |