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Toshiba Semiconductor and Storage Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 1.075
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Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3K44MFV-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
Paket: -
Lager57.738
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
8.5 pF @ 3 V
±20V
-
150mW (Ta)
4Ohm @ 10mA, 4V
150°C
Surface Mount
VESM
SOT-723
TW060Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 6

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
Paket: -
Lager354
SiC (Silicon Carbide Junction Transistor)
1200 V
36A (Tc)
18V
5V @ 4.2mA
46 nC @ 18 V
1530 pF @ 800 V
+25V, -10V
-
170W (Tc)
82mOhm @ 18A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TW107Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 10

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
Paket: -
Lager270
SiC (Silicon Carbide Junction Transistor)
650 V
20A (Tc)
18V
5V @ 1.2mA
21 nC @ 18 V
600 pF @ 400 V
+25V, -10V
-
76W (Tc)
152mOhm @ 10A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TK40S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager2.928
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 200µA
26 nC @ 10 V
1650 pF @ 10 V
±20V
-
88.2W (Tc)
18mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPC8048-H-TE12L-Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 16A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
16A (Ta)
4.5V, 10V
2.3V @ 1mA
87 nC @ 10 V
7540 pF @ 10 V
±20V
-
1W (Ta)
6.9mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP (5.5x6.0)
8-SOIC (0.173", 4.40mm Width)
SSM3J372R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): +12V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Paket: -
Lager603.510
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
560 pF @ 15 V
+12V, -6V
-
1W (Ta)
42mOhm @ 5A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TK5A80E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: -
Lager150
MOSFET (Metal Oxide)
800 V
5A (Ta)
10V
4V @ 500µA
20 nC @ 10 V
950 pF @ 25 V
±30V
-
40W (Tc)
2.4Ohm @ 2.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J371R-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Paket: -
Lager39.117
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
630 pF @ 10 V
+6V, -8V
-
1W (Ta)
55mOhm @ 3A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TK25A20D-S5X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: -
Lager75
MOSFET (Metal Oxide)
200 V
25A (Ta)
10V
3.5V @ 1mA
60 nC @ 10 V
2550 pF @ 100 V
±20V
-
45W (Tc)
70mOhm @ 12.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J144TU-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
Paket: -
Lager15.285
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.7 nC @ 4.5 V
290 pF @ 10 V
+6V, -8V
-
500mW (Ta)
93mOhm @ 1.5A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TPH3R70APL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 90A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager25.680
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
2.5V @ 1mA
67 nC @ 10 V
6300 pF @ 50 V
±20V
-
960mW (Ta), 170W (Tc)
3.7mOhm @ 45A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPH1R306PL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager29.946
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
91 nC @ 10 V
8100 pF @ 30 V
±20V
-
960mW (Ta), 170W (Tc)
1.34mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TW027N65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 27MOH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: -
Lager36
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
5V @ 3mA
65 nC @ 18 V
2288 pF @ 400 V
+25V, -10V
-
156W (Tc)
37mOhm @ 29A, 18V
175°C
Through Hole
TO-247
TO-247-3
TK090Z65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO247-4L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
Paket: -
Lager75
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
230W (Tc)
90mOhm @ 15A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
TPH4R10ANL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 92A/70A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager18.663
MOSFET (Metal Oxide)
100 V
92A (Ta), 70A (Tc)
4.5V, 10V
2.5V @ 1mA
75 nC @ 10 V
6300 pF @ 50 V
±20V
-
2.5W (Ta), 67W (Tc)
4.1mOhm @ 35A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK49N65W-S1F
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: -
Lager168
MOSFET (Metal Oxide)
650 V
49.2A (Ta)
10V
3.5V @ 2.5mA
160 nC @ 10 V
6500 pF @ 300 V
±30V
-
400W (Tc)
55mOhm @ 24.6A, 10V
150°C
Through Hole
TO-247
TO-247-3
TK155U65Z-RQ
Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=150W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
Paket: -
Lager11.889
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
150W (Tc)
155mOhm @ 9A, 10V
150°C
Surface Mount
TOLL
8-PowerSFN
TPW2R508NH-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
Paket: -
Lager4.695
MOSFET (Metal Oxide)
75 V
150A (Ta)
10V
4V @ 1mA
72 nC @ 10 V
6000 pF @ 37.5 V
±20V
-
800mW (Ta), 142W (Tc)
2.5mOhm @ 50A, 10V
150°C
Surface Mount
8-DSOP Advance
8-PowerWDFN
TK7S10N1Z-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager8.715
MOSFET (Metal Oxide)
100 V
7A (Ta)
10V
4V @ 100µA
7.1 nC @ 10 V
470 pF @ 10 V
±20V
-
50W (Tc)
48mOhm @ 3.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TJ9A10M3-S4Q
Toshiba Semiconductor and Storage

TJ9A10M3,S4Q

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: -
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MOSFET (Metal Oxide)
100 V
9A (Ta)
10V
4V @ 1mA
47 nC @ 10 V
2900 pF @ 10 V
±20V
-
19W (Tc)
170mOhm @ 4.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM6K810R-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
Paket: -
Lager17.835
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1.5W (Ta)
69mOhm @ 2A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
SSM3J66MFV-L3XHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS P-CH LOW VOLTA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
Paket: -
Lager43.233
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
1V @ 1mA
1.6 nC @ 4.5 V
100 pF @ 10 V
+6V, -8V
-
150mW (Ta)
390mOhm @ 800mA, 4.5V
150°C
Surface Mount
VESM
SOT-723
TPW1R104PB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8DSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerVDFN
Paket: -
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MOSFET (Metal Oxide)
40 V
120A (Ta)
6V, 10V
3V @ 500µA
55 nC @ 10 V
4560 pF @ 10 V
±20V
-
960mW (Ta), 132W (Tc)
1.14mOhm @ 60A, 10V
175°C
Surface Mount
8-DSOP Advance
8-PowerVDFN
TPH3R704PC-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 82A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager15.465
MOSFET (Metal Oxide)
40 V
82A (Tc)
4.5V, 10V
2.4V @ 300µA
47 nC @ 10 V
3615 pF @ 20 V
±20V
-
830mW (Ta), 90W (Tc)
3.7mOhm @ 41A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK110E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 110MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: -
Lager318
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
4V @ 1.02mA
40 nC @ 10 V
2250 pF @ 300 V
±30V
-
190W (Tc)
110mOhm @ 12A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM6K516NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
  • Vgs (Max): +20V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
Paket: -
Lager17.535
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
2.5V @ 100µA
2.5 nC @ 4.5 V
280 pF @ 15 V
+20V, -12V
-
1.25W (Ta)
46mOhm @ 4A, 10V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM3J66MFV-L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 800MA VESM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
Paket: -
Lager18.804
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
1V @ 1mA
1.6 nC @ 4.5 V
100 pF @ 10 V
+6V, -8V
-
150mW (Ta)
390mOhm @ 800mA, 4.5V
150°C
Surface Mount
VESM
SOT-723
TK5P65W-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager5.961
MOSFET (Metal Oxide)
650 V
5.2A (Ta)
10V
3.5V @ 170µA
10.5 nC @ 10 V
380 pF @ 300 V
±30V
-
60W (Tc)
1.22Ohm @ 2.6A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH3R70APL1-LQ
Toshiba Semiconductor and Storage

150V U-MOS IX-H SOP-ADVANCE(N) 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager28.071
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
2.5V @ 1mA
67 nC @ 10 V
6300 pF @ 50 V
±20V
-
210W (Tc)
3.7mOhm @ 45A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM6J216FE-LF
Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 12V 4.8A ES6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 12 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666
Paket: -
Lager2.400
MOSFET (Metal Oxide)
12 V
4.8A (Ta)
1.5V, 4.5V
1V @ 1mA
12.7 nC @ 4.5 V
1040 pF @ 12 V
±8V
-
700mW (Ta)
32mOhm @ 3.5A, 4.5V
150°C
Surface Mount
ES6
SOT-563, SOT-666