Toshiba Semiconductor and Storage Produkte

TK19A45D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 19A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

TJ30S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SSM6J505NU,LF

Toshiba Semiconductor and Storage

MOSFET P CH 12V 12A UDFN6B

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFNB (2x2)
• Package / Case: 6-WDFN Exposed Pad

Paket: 6-WDFN Exposed Pad

TK31N60W5,S1VF

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

2SC5930(TPF2,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 600V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

Paket: SC-71

2SA1873-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A USV

• Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paket: 5-TSSOP, SC-70-5, SOT-353

RN49A1(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paket: 6-TSSOP, SC-88, SOT-363

TA78L005AP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paket: TO-226-3, TO-92-3 Long Body

TA76431AS(T6SOY,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paket: TO-226-3, TO-92-3 Long Body

TCR3DM30,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 65µA ~ 78µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paket: 4-UDFN Exposed Pad

TCR2LF10,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paket: SC-74A, SOT-753

TC58BVG2S0HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 63FBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-TFBGA (9x11)

Paket: 63-VFBGA

TC7SPN3125CFC(T5L)

Toshiba Semiconductor and Storage

DUAL SUPPLY BUS BUFFER UNI CST6C

• Translator Type: Voltage Level
• Channel Type: Unidirectional
• Number of Circuits: 1
• Channels per Circuit: 1
• Voltage - VCCA: 1.1V ~ 2.7V
• Voltage - VCCB: 1.65V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: CST6C

Paket: 6-XFDFN Exposed Pad

TC74HC86APF

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-DIP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Supplier Device Package: 14-DIP
• Package / Case: 14-DIP (0.300", 7.62mm)

Paket: 14-DIP (0.300", 7.62mm)

TC7SZ34AFS,L3F

Toshiba Semiconductor and Storage

IC BUFFER UHS SGL FSV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: fSV

Paket: SOT-953

74VHCT540AFT(BE)

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

• Logic Type: Buffer, Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

Paket: 20-TSSOP (0.173", 4.40mm Width)

TLP3062(S,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

• Output Type: Triac
• Zero Crossing Circuit: Yes
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Voltage - Off State: 600V
• Static dV/dt (Min): 200V/µs
• Current - LED Trigger (Ift) (Max): 10mA
• Current - On State (It (RMS)) (Max): 100mA
• Current - Hold (Ih): 600µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
• Supplier Device Package: 6-DIP (Cut), 5 Lead
• Approvals: BSI, SEMKO, UR

Paket: 6-DIP (0.300", 7.62mm), 5 Leads

TLP525G-2(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 8DIP

• Output Type: Triac
• Zero Crossing Circuit: No
• Number of Channels: 2
• Voltage - Isolation: 2500Vrms
• Voltage - Off State: 400V
• Static dV/dt (Min): 200V/µs
• Current - LED Trigger (Ift) (Max): 10mA
• Current - On State (It (RMS)) (Max): 80mA
• Current - Hold (Ih): 200µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Approvals: UR

Paket: 8-DIP (0.300", 7.62mm)

TLP185(GRH-TL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 150% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paket: 6-SMD (4 Leads), Gull Wing

74LCX574FT

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 150MHz
• Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Iq): 10µA
• Input Capacitance: 7pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

Paket: 20-TSSOP (0.173", 4.40mm Width)

TCR2LF285,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.85V DROPOUT220MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

TC7W32FU-TE12L

Toshiba Semiconductor and Storage

IC GATE OR 2CH 2-INP SM8

• Logic Type: OR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2V ~ 6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5V ~ 1.8V
• Logic Level - High: 1.5V ~ 4.2V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SSOP
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Paket: -

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TPH3R10AQM-LQ

Toshiba Semiconductor and Storage

100V U-MOS X-H SOP-ADVANCE(N) 3.

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 210W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5.75)
• Package / Case: 8-PowerTDFN

Paket: -

RN2311-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

Paket: -

RN4907FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paket: -

RN2403-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: -

RN2906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paket: -

7UL2T08FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

• Logic Type: AND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2.3V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.35V ~ 0.5V
• Logic Level - High: 1.1V ~ 1.2V
• Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

Paket: -

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