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Toshiba Semiconductor and Storage Produkte

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TPC8038-H(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A SOP8 2-6J1B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
Paket: 8-SOIC (0.173", 4.40mm Width)
Lager6.944
TK8R2A06PL,S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 4.5V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager15.744
SSM3J351R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 3.5A SOT-23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Paket: SOT-23-3 Flat Leads
Lager23.826
hot TPCL4203(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
Paket: 4-XLGA
Lager96.000
2SC3668-Y,F2PANF(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
Paket: SC-71
Lager5.728
RN2904(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paket: 6-TSSOP, SC-88, SOT-363
Lager4.864
CLH07(TE16L,NMB,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: L-FLAT?
Lager4.432
TA76431AS,T6MURF(J
Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
Paket: TO-226-3, TO-92-3 Long Body
Lager6.704
TCR3DG10,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 300MA 4WCSPE

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPE (0.65x0.65)
Paket: 4-XFBGA, CSPBGA
Lager37.920
TC62D723FNG,C,EL
Toshiba Semiconductor and Storage

IC LED DRIVER LIN 90MA 24HTSSOP

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 17V
  • Current - Output / Channel: 90mA
  • Frequency: -
  • Dimming: -
  • Applications: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 24-HTSSOP
Paket: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Lager5.856
TC4S11FT5LFT
Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 3 V ~ 18 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Logic Level - Low: 1.5 V ~ 4 V
  • Logic Level - High: 3.5 V ~ 11 V
  • Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
Paket: SC-74A, SOT-753
Lager2.272
74LCX08FT(AE)
Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14TSSOP

  • Logic Type: AND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.7 V ~ 0.8 V
  • Logic Level - High: 1.7 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Paket: 14-TSSOP (0.173", 4.40mm Width)
Lager5.104
TC7WT241FUTE12LF
Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST N-INV SM8

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 6mA, 6mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: SM8
Paket: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Lager25.866
TD62064AFG,S
Toshiba Semiconductor and Storage

IC DVR DARL SINK TTL 4CH 16HSOP

  • Type: Driver
  • Protocol: RS232
  • Number of Drivers/Receivers: 4/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
Paket: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Lager7.328
TL1L2-WH1,L
Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

  • Color: White, Neutral
  • CCT (K): 4000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 120 lm (105 lm ~ 135 lm)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.85V
  • Lumens/Watt @ Current - Test: 120 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 1A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.080" (2.03mm)
Paket: 1414 (3535 Metric)
Lager4.626
DF2S12FS,L3M
Toshiba Semiconductor and Storage

TVS DIODE 9VWM 18.5VC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 9V (Max)
  • Voltage - Breakdown (Min): 11.4V
  • Voltage - Clamping (Max) @ Ipp: 18.5V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 15pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
Paket: SOD-923
Lager104.292
TLP3475(TP,F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 300MA 50V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 1.5 Ohm
  • Load Current: 300mA
  • Voltage - Input: 1.27VDC
  • Voltage - Load: 0 ~ 50 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.096", 2.45mm)
  • Supplier Device Package: 4-VSON
  • Relay Type: Relay
Paket: 4-SMD (0.096", 2.45mm)
Lager2.556
TLP719(F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRANS 6-SDIP GW

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 20% @ 16mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 20V
  • Current - Output / Channel: 8mA
  • Voltage - Forward (Vf) (Typ): 1.65V
  • Current - DC Forward (If) (Max): 25mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.268", 6.80mm Width)
  • Supplier Device Package: 6-SDIP Gull Wing
Paket: 6-SOIC (0.268", 6.80mm Width)
Lager4.338
hot 74LCX573FT
Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 1.5ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
Paket: 20-TSSOP (0.173", 4.40mm Width)
Lager34.224
hot 74HC540D
Toshiba Semiconductor and Storage

IC BUFFER INVERT 6V 20SOIC

  • Logic Type: Buffer, Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
Paket: 20-SOIC (0.295", 7.50mm Width)
Lager4.832
TC74VHC32F(EL,K,F)
Toshiba Semiconductor and Storage

X34 OR GATE VCC: 2-5.5V

  • Logic Type: OR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.1V ~ 36V
  • Logic Level - High: 2V ~ 4.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOP
  • Package / Case: 14-SOIC (0.209", 5.30mm Width)
Paket: 14-SOIC (0.209", 5.30mm Width)
Lager18.306
RN2105MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager2.529
RN2905FE-LF-CT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: -
Request a Quote
TC7SBL384CFU-LF
Toshiba Semiconductor and Storage

IC SWITCH SPST 18 OHM USV

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 18Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.65V ~ 3.6V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 6ns, 6ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-SSOP
Paket: -
Request a Quote
TCR2EN34-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=3.4V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.4V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.18V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
Paket: -
Lager29.700
TPH2R003PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager33.024
TCR3DM33-RF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.23V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
Paket: -
Lager22.410
TRS12E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A TO-220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 650 V
  • Capacitance @ Vr, F: 778pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C
Paket: -
Lager1.134