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Toshiba Semiconductor and Storage Produkte

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2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.384
2SK2917(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)IS
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager6.896
TK100S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.800
2SK1829TE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.05A USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 3V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager59.976
2SC2235-O,F(J
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager5.792
2SA1837,HFEMBJF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager3.536
TTA1943(Q)
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PL

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
Paket: TO-3PL
Lager7.152
RN1109MFV,L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 500NA VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: SOT-723
Lager2.368
RN1318(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager2.640
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: SOT-563, SOT-666
Lager4.496
TA58L15S,Q(J
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
Paket: TO-220-3 Full Pack
Lager5.232
TCR2LE31,LM
Toshiba Semiconductor and Storage

IC REG LINEAR 200MA ESV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
Paket: SOT-553
Lager27.618
TC74HC08APF
Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14-DIP

  • Logic Type: AND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Supplier Device Package: 14-DIP
  • Package / Case: 14-DIP (0.300", 7.62mm)
Paket: 14-DIP (0.300", 7.62mm)
Lager28.440
TC7PZ17FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUFFER SCHMIT TRIG 6SSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: Schmitt Trigger
  • Output Type: Push-Pull
  • Current - Output High, Low: 32mA, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paket: 6-TSSOP, SC-88, SOT-363
Lager208.686
TLP197GA(TP,F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 400V 6SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 35 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SOP (0.173", 4.40mm)
  • Supplier Device Package: 6-SOP (2.54mm)
  • Relay Type: Relay
Paket: 6-SOP (0.173", 4.40mm)
Lager6.210
TLP292(Y-TPL,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 150% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
Paket: 4-SOIC (0.179", 4.55mm)
Lager5.058
TLP2767(TP,E
Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE SO6L

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 25kV/µs
  • Input Type: DC
  • Output Type: Tri-State
  • Current - Output / Channel: 10mA
  • Data Rate: 50MBd
  • Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
  • Rise / Fall Time (Typ): 2ns, 1ns
  • Voltage - Forward (Vf) (Typ): 1.6V
  • Current - DC Forward (If) (Max): 15mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 6-SO
Paket: 6-SOIC (0.295", 7.50mm Width)
Lager13.836
TC74ACT04P(F)
Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14DIP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 4µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Supplier Device Package: 14-DIP
  • Package / Case: 14-DIP (0.300", 7.62mm)
Paket: 14-DIP (0.300", 7.62mm)
Lager5.920
TMPM365FYXBG(HJ)
Toshiba Semiconductor and Storage

TX FAMILY MCU

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I²C, SIO, SPI, UART/USART, USB
  • Peripherals: DMA, WDT
  • Number of I/O: 73
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 24K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 105-LFBGA
  • Supplier Device Package: 105-LFBGA (9×9)
Paket: 105-LFBGA
Lager20.184
RN4988FE-LF-CT
Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR22KOHM Q1BER4

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: -
Lager12.000
TCR5RG33A-LF
Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT: 3.3V

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 13 µA
  • Current - Supply (Max): -
  • PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSPF (0.65x0.65)
Paket: -
Lager53.193
TK7R7P10PL-RQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager7.692
SSM6P69NU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
Paket: -
Lager49.242
RN1101-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: -
Lager26.871
CRZ36-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE ZENER 36V 700MW SFLAT

  • Voltage - Zener (Nom) (Vz): 36 V
  • Tolerance: ±10%
  • Power - Max: 700 mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
Paket: -
Lager4.122
RN2102MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager21.660
RN1309-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
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CMS11-TE12L
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
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