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Vishay Semiconductor Diodes Division Produkte

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VS-GT75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager3.984
VS-GA100TS60SF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager4.256
VS-GA200HS60S1
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 480A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager7.296
VS-GT75NP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 446W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 446W
  • Vce(on) (Max) @ Vge, Ic: 2.08V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 9.45nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-PAK (3 + 4)
Lager6.064
VS-GT400TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 750A 2344W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 2344W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
Paket: Double INT-A-PAK (3 + 8)
Lager5.232
VS-GT400TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 600A 2119W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
Paket: Double INT-A-PAK (3 + 8)
Lager3.408
VS-GT100TP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 180A 652W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 652W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 12.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-PAK (3 + 4)
Lager7.952
VS-GT100NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager6.880
VS-GT100LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.936
VS-GT100DA60U
Vishay Semiconductor Diodes Division

IGBT 600V 184A 577W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 184A
  • Power - Max: 577W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager2.304
VS-GT100DA120U
Vishay Semiconductor Diodes Division

IGBT 1200V 258A 893W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 258A
  • Power - Max: 893W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.904
VS-GB75SA120UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.104
VS-GB75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 170A 658W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-PAK (3 + 4)
Lager5.712
VS-GB75DA120UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager6.752
VS-GB70NA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 111A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager5.008
VS-GB70LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 111A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.280
VS-GB50NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.824
VS-GB50LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager5.184
VS-GB100TP120U
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 735W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 735W
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager4.992
VS-GB100DA60UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 125A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager7.840
VS-GA200SA60SP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 781W
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.504
VS-GA200HS60S1PBF
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 480A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager4.208
VS-GA100TS60SFPBF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W INT-A-PAK

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager5.824
VS-GA100TS120UPBF
Vishay Semiconductor Diodes Division

IGBT 1200V 182A 520W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 182A
  • Power - Max: 520W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 18.67nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
Paket: INT-A-Pak
Lager5.536
VS-GA100NA60UP
Vishay Semiconductor Diodes Division

IGBT 600V 100A 250W SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 7.4nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager6.112
VS-EMG050J60N
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 88A
  • Power - Max: 338W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK2
  • Supplier Device Package: EMIPAK2
Paket: EMIPAK2
Lager3.776
VS-EMF050J60U
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

  • IGBT Type: -
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 88A
  • Power - Max: 338W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK2
  • Supplier Device Package: EMIPAK2
Paket: EMIPAK2
Lager3.536
VS-CPV363M4KPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Power - Max: 36W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
Paket: 19-SIP (13 Leads), IMS-2
Lager4.528
GB35XF120K
Vishay Semiconductor Diodes Division

MODULE IGBT 1200V 35A ECONO2 6PK

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 284W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 3.475nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECONO2
  • Supplier Device Package: -
Paket: ECONO2
Lager6.144
50MT060ULS
Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A MTP

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 445W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 14.7nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 10-MTP
  • Supplier Device Package: 10-MTP
Paket: 10-MTP
Lager5.792