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Vishay Siliconix Produkte - Transistoren - FETs, MOSFET - Einzeln

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Paket
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Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIR588DP-T1-RE3
Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 59.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paket: -
Request a Quote
MOSFET (Metal Oxide)
80 V
17.2A (Ta), 59.5A (Tc)
7.5V, 10V
4V @ 250µA
28.5 nC @ 10 V
1380 pF @ 40 V
±20V
-
5W (Ta), 59.5W (Tc)
8mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQ3418EV-T1_GE3
Vishay Siliconix

MOSFET N-CHANNEL 40V 8A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Lager106.770
MOSFET (Metal Oxide)
40 V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
12.7 nC @ 10 V
678 pF @ 20 V
±20V
-
5W (Tc)
32mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SIHP21N80AEF-GE3
Vishay Siliconix

E SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: -
Lager2.955
MOSFET (Metal Oxide)
800 V
16.3A (Tc)
10V
4V @ 250µA
71 nC @ 10 V
1511 pF @ 100 V
±30V
-
179W (Tc)
250mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQ3418EV-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Lager98.535
MOSFET (Metal Oxide)
40 V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
12.7 nC @ 10 V
678 pF @ 20 V
±20V
-
5W (Tc)
32mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SI2319DDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 2.7A/3.6A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager2.265
MOSFET (Metal Oxide)
40 V
2.7A (Ta), 3.6A (Tc)
4.5V, 10V
2.5V @ 250µA
19 nC @ 10 V
650 pF @ 20 V
±20V
-
1W (Ta), 1.7W (Tc)
75mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIHB186N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 8.4A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Lager3.225
MOSFET (Metal Oxide)
600 V
8.4A (Tc)
10V
5V @ 250µA
32 nC @ 10 V
1081 pF @ 100 V
±30V
-
156W (Tc)
193mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHU6N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 5A TO251AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
800 V
5A (Tc)
10V
4V @ 250µA
22.5 nC @ 10 V
422 pF @ 100 V
±30V
-
62.5W (Tc)
950mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
SQD50P08-28_GE3
Vishay Siliconix

MOSFET P-CH 80V 48A TO252AA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager20.982
MOSFET (Metal Oxide)
80 V
48A (Tc)
10V
3.5V @ 250µA
145 nC @ 10 V
6035 pF @ 25 V
±20V
-
136W (Tc)
28mOhm @ 12.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SISA35DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 10A/16A PPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
Paket: -
Lager44.847
MOSFET (Metal Oxide)
30 V
10A (Ta), 16A (Tc)
4.5V, 10V
2.2V @ 250µA
42 nC @ 10 V
1500 pF @ 15 V
±20V
-
3.2W (Ta), 24W (Tc)
19mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SQJQ184ER-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16009 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerSMD, Gull Wing
Paket: -
Lager1.674
MOSFET (Metal Oxide)
80 V
430A (Tc)
10V
3.5V @ 250µA
240 nC @ 10 V
16009 pF @ 25 V
±20V
-
600W (Tc)
1.4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerSMD, Gull Wing
SQ4401EY-T1_BE3
Vishay Siliconix

MOSFET P-CH 40V 17.3A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.14W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
Lager42.420
MOSFET (Metal Oxide)
40 V
17.3A (Tc)
4.5V, 10V
2.5V @ 250µA
115 nC @ 10 V
4250 pF @ 20 V
±20V
-
7.14W (Tc)
14mOhm @ 10.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SIHFL9110TR-GE3
Vishay Siliconix

MOSFET P-CH 100V 1.1A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: -
Lager4.506
MOSFET (Metal Oxide)
100 V
1.1A (Tc)
10V
4V @ 250µA
8.7 nC @ 10 V
200 pF @ 25 V
±20V
-
2W (Ta), 3.1W (Tc)
1.2Ohm @ 660mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SIDR870ADP-T1-RE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
Paket: -
Lager64.197
MOSFET (Metal Oxide)
100 V
21.8A (Ta), 95A (Tc)
4.5V, 10V
3V @ 250µA
80 nC @ 10 V
2866 pF @ 50 V
±20V
-
6.25W (Ta), 125W (Tc)
6.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SQJA78EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 72A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paket: -
Request a Quote
MOSFET (Metal Oxide)
80 V
72A (Tc)
10V
3.3V @ 250µA
95 nC @ 10 V
5100 pF @ 25 V
±20V
-
68W (Tc)
5.3mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHA150N60E-GE3
Vishay Siliconix

E SERIES POWER MOSFET THIN-LEAD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paket: -
Lager6.000
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
5V @ 250µA
36 nC @ 10 V
1514 pF @ 100 V
±30V
-
179W (Tc)
155mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SI7485DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12.5A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 900mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paket: -
Request a Quote
MOSFET (Metal Oxide)
20 V
12.5A (Ta)
-
900mV @ 1mA
150 nC @ 5 V
-
-
-
-
7.3mOhm @ 20A, 4.5V
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI3476DV-T1-BE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Lager17.850
MOSFET (Metal Oxide)
80 V
3.5A (Ta), 4.6A (Tc)
4.5V, 10V
3V @ 250µA
7.5 nC @ 10 V
195 pF @ 40 V
±20V
-
2W (Ta), 3.6W (Tc)
93mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SQ2361CES-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 2.8A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
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MOSFET (Metal Oxide)
60 V
2.8A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 10 V
550 pF @ 30 V
±20V
-
2W (Tc)
177mOhm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIDR870ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 95A PPAK SO-8DC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
Paket: -
Lager19.302
MOSFET (Metal Oxide)
100 V
95A (Tc)
4.5V, 10V
3V @ 250µA
80 nC @ 10 V
2866 pF @ 50 V
±20V
-
125W (Tc)
6.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SIR112DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 40V 37.6A/133A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paket: -
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MOSFET (Metal Oxide)
40 V
37.6A (Ta), 133A (Tc)
4.5V, 10V
2.4V @ 250µA
89 nC @ 10 V
4270 pF @ 20 V
+20V, -16V
-
5W (Ta), 62.5W (Tc)
1.96mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIDR622DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 150V 64.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
Paket: -
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MOSFET (Metal Oxide)
150 V
64.6A (Ta), 56.7A (Tc)
7.5V, 10V
4.5V @ 250µA
41 nC @ 10 V
1516 pF @ 75 V
±20V
-
6.25W (Ta), 125W (Tc)
17.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SISS32LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.4A/63A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
Paket: -
Lager70.875
MOSFET (Metal Oxide)
80 V
17.4A (Ta), 63A (Tc)
4.5V, 10V
2.5V @ 250µA
57 nC @ 10 V
2550 pF @ 40 V
±20V
-
5W (Ta), 65.7W (Tc)
7.2mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
SIHLL110TR-GE3
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: -
Lager6.948
MOSFET (Metal Oxide)
100 V
1.5A (Tc)
4V, 5V
2V @ 250µA
6.1 nC @ 5 V
250 pF @ 25 V
±10V
-
2W (Ta), 3.1W (Tc)
540mOhm @ 900mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SI3460BDV-T1-BE3
Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Lager8.643
MOSFET (Metal Oxide)
20 V
6.7A (Ta), 8A (Tc)
1.8V, 4.5V
1V @ 250µA
24 nC @ 8 V
860 pF @ 10 V
±8V
-
2W (Ta), 3.5W (Tc)
27mOhm @ 5.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SQD100N04_3M6T4GE3
Vishay Siliconix

MOSFET N-CH 40V 100A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
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MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
3.5V @ 250µA
105 nC @ 10 V
6700 pF @ 25 V
±20V
-
136W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 175°C
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ170ELP-T1_GE3
Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paket: -
Lager19.302
MOSFET (Metal Oxide)
60 V
63A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 10 V
1165 pF @ 25 V
±20V
-
136W (Tc)
16.3mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IRFR224TRPBF-BE3
Vishay Siliconix

N-CHANNEL 250V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
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MOSFET (Metal Oxide)
250 V
3.8A (Tc)
10V
4V @ 250µA
14 nC @ 10 V
260 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
1.1Ohm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFR420A-GE3
Vishay Siliconix

MOSFET N-CH 500V 3.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
MOSFET (Metal Oxide)
500 V
3.3A (Tc)
10V
4.5V @ 250µA
17 nC @ 10 V
3400 pF @ 25 V
±30V
-
83W (Tc)
3Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHB11N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 12A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Lager15.000
MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
4V @ 250µA
88 nC @ 10 V
1670 pF @ 100 V
±30V
-
179W (Tc)
440mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHFR9220-GE3
Vishay Siliconix

MOSFET P-CHANNEL 200V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager11.661
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
4V @ 250µA
20 nC @ 10 V
340 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
1.5Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63