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Alpha & Omega Semiconductor Inc. |
IGBT 600V 60A 208W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
- Power - Max: 208W
- Switching Energy: 1.1mJ (on), 240µJ (off)
- Input Type: Standard
- Gate Charge: 34nC
- Td (on/off) @ 25°C: 20ns/58ns
- Test Condition: 400V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 120ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Paket: TO-247-3 |
Lager2.576 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Lager5.792 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager44.112 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 2A TO251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager3.920 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Lager13.260 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13.5A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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Paket: TO-251-3 Stub Leads, IPak |
Lager36.732 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 25V 44A 8ULTRASO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1716pF @ 12.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UltraSO-8?
- Package / Case: 3-PowerSMD, Flat Leads
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Paket: 3-PowerSMD, Flat Leads |
Lager975.660 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 8A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4833pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
- Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.344 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 80V 8.5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1109pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.024 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 15A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager6.564 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 20A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager36.864 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 46A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2994pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Paket: 8-PowerWDFN |
Lager35.532 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Paket: 8-SOIC |
Lager36.000 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 25A 8-DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
- Power - Max: 4.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: 8-DFN-EP (5.2x5.55)
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Paket: 8-SMD, Flat Lead Exposed Pad |
Lager3.792 |
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Alpha & Omega Semiconductor Inc. |
IC REGULATOR BUCK SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 16V
- Current - Output: 3A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager4.640 |
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Alpha & Omega Semiconductor Inc. |
IC POWER DIST LOAD SW 8DFN
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.8 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.3A
- Rds On (Typ): 75 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
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Paket: 8-WFDFN Exposed Pad |
Lager4.576 |
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Alpha & Omega Semiconductor Inc. |
IC ANLG SWITCH DUAL SPDT 10QFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 400 mOhm
- Channel-to-Channel Matching (ΔRon): 20 mOhm
- Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 60ns, 35ns
- -3db Bandwidth: 50MHz
- Charge Injection: 40pC
- Channel Capacitance (CS(off), CD(off)): 15pF
- Current - Leakage (IS(off)) (Max): 50nA
- Crosstalk: -70dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-QFN (1.8x1.4)
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Paket: 10-UFQFN |
Lager4.112 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 0.6A 1MHZ
- Function: -
- Output Configuration: -
- Topology: -
- Output Type: -
- Number of Outputs: -
- Voltage - Input (Min): -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: -
- Synchronous Rectifier: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Paket: SOT-23-6 |
Lager3.440 |
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Alpha & Omega Semiconductor Inc. |
POWER IC EZBUCK
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 6.5V
- Voltage - Input (Max): 28V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 23.8V
- Current - Output: 6A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-PowerWFQFN
- Supplier Device Package: 18-QFN (3x3)
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Paket: 18-PowerWFQFN |
Lager5.184 |
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Alpha & Omega Semiconductor Inc. |
IC POWER DIST LOAD SW 8DFN
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.8V ~ 5.5V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.3A
- Rds On (Typ): 75mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (2x2)
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Paket: 8-WFDFN Exposed Pad |
Lager2.768 |
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Alpha & Omega Semiconductor Inc. |
LINEAR IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 40 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 126 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 25A 28QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4V
- Voltage - Input (Max): 25V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 21.25V
- Current - Output: 25A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-PowerTFQFN
- Supplier Device Package: 28-QFN (5x5)
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Paket: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 25V 73A/400A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Paket: - |
Lager27.705 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 60V 9.5A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
- Power - Max: 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: - |
Lager43.119 |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Paket: - |
Lager8.865 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 14A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Paket: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 4.1A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
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