Diodes Incorporated Produkte

FL3200037

Diodes Incorporated

CRYSTAL 32.0000MHZ 8PF SMD

• Type: MHz Crystal
• Frequency: 32MHz
• Frequency Stability: ±15ppm
• Frequency Tolerance: ±15ppm
• Load Capacitance: 8pF
• ESR (Equivalent Series Resistance): 50 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -20°C ~ 70°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.030" (0.75mm)

Paket: 4-SMD, No Lead

DMN6069SFGQ-7

Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

Paket: 8-PowerVDFN

2N7002H-13

Diodes Incorporated

MOSFET N-CH 60V 0.17A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370mW (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN55D0UTQ-7

Diodes Incorporated

MOSFET N-CH 50V 160MA SOT-523

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 100mA, 4V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

Paket: SOT-523

DMP3056L-7

Diodes Incorporated

MOSFET P-CH 30V 4.3A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1.38W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

DMN5L06VK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 280mA
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: 250mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paket: SOT-563, SOT-666

ZXTC6719MCTA

Diodes Incorporated

TRANS NPN/PNP 50V/40V 4A/3A 8DFN

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 4A, 3A
• Voltage - Collector Emitter Breakdown (Max): 50V, 40V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V
• Power - Max: 1.7W
• Frequency - Transition: 165MHz, 190MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-DFN (3x2)

Paket: 8-WDFN Exposed Pad

DDA114EU-7

Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

DDC113TU-7-F

Diodes Incorporated

TRANS 2NPN PREBIAS 0.2W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

MMSZ5245B-7-F

Diodes Incorporated

DIODE ZENER 15V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Paket: SOD-123

DZ23C7V5-7

Diodes Incorporated

DIODE ZENER ARRAY 7.5V SOT23-3

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

SBR8M100P5Q-13

Diodes Incorporated

DIODE SBR 100V 8A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: PowerDI? 5

SDM02U30CSP-7

Diodes Incorporated

DIODE SCHOTTKY X3-WLB0603-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: X3-WLB0603-2
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: 2-SMD, No Lead

BAT46W-7-F

Diodes Incorporated

DIODE SCHOTTKY 100V 150MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 150mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 75V
• Capacitance @ Vr, F: 20pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

Paket: SOD-123

GBJ806-F

Diodes Incorporated

RECT BRIDGE GPP 8A 600V GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

Paket: 4-SIP, GBJ

PT7M6144NLEXVEX-2017

Diodes Incorporated

RESET GENERATOR U-DFN1616-4

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 200 µs Maximum
• Voltage - Threshold: 4.4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

PAM8902ZER-P

Diodes Incorporated

IC AMP AUD 30VPP CLASS D 16WCSP

• Type: Class D
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Features: Short-Circuit and Thermal Protection
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Supplier Device Package: 16-CSP (1.95x1.95)
• Package / Case: 16-WFBGA, WLCSP

Paket: 16-WFBGA, WLCSP

PI3HDX1204EZLE

Diodes Incorporated

IC REDRIVER HDMI 42TQFN

• Applications: HDMI Redriver, Level Shifter
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

Paket: -

PI2EQX6741SLZDEX

Diodes Incorporated

IC REDRIVER SATA3 1CH 20TQFN

• Type: Buffer, ReDriver
• Applications: SATA3
• Input: CML
• Output: CML
• Data Rate (Max): 6Gbps
• Number of Channels: 1
• Delay Time: -
• Signal Conditioning: Input Equalization, Output Pre-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 1.05V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 20-WFQFN Exposed Pad
• Supplier Device Package: 20-TQFN (4x4)

Paket: 20-WFQFN Exposed Pad

ZMC05TA

Diodes Incorporated

SENSOR CURRENT MR 5A AC/DC

• For Measuring: AC/DC
• Sensor Type: Magnetoresistive, Open Loop
• Current - Sensing: 5A
• Number of Channels: 1
• Output: Ratiometric, Voltage
• Sensitivity: -
• Frequency: 100kHz
• Linearity: -
• Accuracy: -
• Voltage - Supply: 12V
• Response Time: -
• Current - Supply (Max): -
• Operating Temperature: -25°C ~ 125°C
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SMD

Paket: 8-SMD

PAM2306AYPAE

Diodes Incorporated

IC INTEGRATED CIRCUIT

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

DMN2710UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
• Power - Max: 360mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paket: -

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DMN3060LWQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

Paket: -

DMP1022UWS-13

Diodes Incorporated

MOSFET P-CH 12V 7.2A 8DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3020-8
• Package / Case: 8-VDFN

Paket: -

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AP7366EA-25W5-7

Diodes Incorporated

LDO CMOS HICURR SOT25 T&R 3K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.38V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): 80 µA
• Current - Supply (Max): -
• PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

Paket: -

DMTH10H038SPDW-13

Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
• Power - Max: 2.7W (Ta), 39W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type UXD)

Paket: -

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AP7353-285FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4 (T

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.155V @ 250mA
• Current - Output: 250mA
• Current - Quiescent (Iq): 27 µA
• Current - Supply (Max): -
• PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4 (Type B)

Paket: -

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DMTH45M5SPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
• Power - Max: 3.3W (Ta), 60W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type UXD)

Paket: -