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Diodes Incorporated Produkte

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FN1220024
Diodes Incorporated

OSCILLATOR XO 12.288MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 12.288MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -20°C ~ 70°C
  • Current - Supply (Max): 15mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.071" (1.80mm)
Paket: 4-SMD, No Lead
Lager6.786
DMP2035UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V TSOT26

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: SOT-23-6 Thin, TSOT-23-6
Lager5.472
DN0150ALP4-7B
Diodes Incorporated

TRANS NPN 50V 0.1A DFN1006H4-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 450mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: X2-DFN1006-3
Paket: 3-XFDFN
Lager3.200
DDTC144ECA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.176
ZDT6790TC
Diodes Incorporated

TRANS NPN/PNP 45V/40V 2A SM8

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 45V, 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A / 750mV @ 50mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 150MHz, 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
Paket: SOT-223-8
Lager2.672
BZX84C5V6W-7
Diodes Incorporated

DIODE ZENER 5.6V 200MW SOT323

  • Voltage - Zener (Nom) (Vz): 5.6V
  • Tolerance: ±7%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager5.872
BZT52C18-13
Diodes Incorporated

DIODE ZENER 18V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 18V
  • Tolerance: ±6%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 12.6V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
Paket: SOD-123
Lager7.408
hot MMSZ5225B-7-F
Diodes Incorporated

DIODE ZENER 3V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 3V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
Paket: SOD-123
Lager2.247.120
hot MMSZ5233B-7-F
Diodes Incorporated

DIODE ZENER 6V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 6V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 3.5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
Paket: SOD-123
Lager172.800
DZ23C47-7-F
Diodes Incorporated

DIODE ZENER ARRAY 47V SOT23-3

  • Configuration: 1 Pair Common Cathode
  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.472
BAS70W-04-7
Diodes Incorporated

DIODE ARRAY SCHOTTKY 70V SOT323

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager4.640
MBR20H100CTF-G1
Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
Paket: TO-220-3 Full Pack
Lager6.688
hot BAV99BRLP-7
Diodes Incorporated

DIODE ARRAY GP 75V 300MA 6DFN

  • Diode Configuration: 2 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io) (per Diode): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 75V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paket: 6-UDFN Exposed Pad
Lager2.286.000
74LVC2G32RA3-7
Diodes Incorporated

IC GATE OR 2CH 2-INP 8-DFN1210

  • Logic Type: OR Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 40µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1210-8
  • Package / Case: 8-XFDFN
Paket: 8-XFDFN
Lager5.472
hot 74LVC1G14SE-7
Diodes Incorporated

IC SGL SCHMITT INVERTER SOT353

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: Schmitt Trigger
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 200µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: 0.3 V ~ 1.45 V
  • Logic Level - High: 1.2 V ~ 3.33 V
  • Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-353
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
Paket: 5-TSSOP, SC-70-5, SOT-353
Lager8.508
PI6C49X0204BWIEX
Diodes Incorporated

1 TO 4 LVCMOS/ LVTTL FANOUT BUFF

  • Type: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Input: -
  • Output: -
  • Frequency - Max: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.496
1.5KE9V1CA-B
Diodes Incorporated

TVS DIODE 7.78VWM 13.4VC DO201A

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 7.78V
  • Voltage - Breakdown (Min): 8.65V
  • Voltage - Clamping (Max) @ Ipp: 13.4V
  • Current - Peak Pulse (10/1000µs): 112A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201
Paket: DO-201AA, DO-27, Axial
Lager6.552
hot SMAJ40CA-13
Diodes Incorporated

TVS DIODE 40VWM 64.5VC SMA

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 40V
  • Voltage - Breakdown (Min): 44.4V
  • Voltage - Clamping (Max) @ Ipp: 64.5V
  • Current - Peak Pulse (10/1000µs): 6.2A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
Paket: DO-214AC, SMA
Lager56.040
AH1808-W-7
Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR SC59

  • Function: Omnipolar Switch
  • Technology: Hall Effect
  • Polarization: Either
  • Sensing Range: ±6mT Trip, ±5mT Release
  • Test Condition: -40°C ~ 85°C
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Current - Supply (Max): 16µA
  • Current - Output (Max): 2.5mA
  • Output Type: Open Drain
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
Paket: TO-236-3, SC-59, SOT-23-3
Lager29.100
PI5PD2069WE+CX
Diodes Incorporated

USB POWER SWITCH SO-8 T&R 3K

  • Protocol: -
  • Function: -
  • Interface: -
  • Standards: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.688
PI6CB33802ZLIEX-13R
Diodes Incorporated

IC CLK BUF 1:8 133.46MHZ 48TQFN

  • Type: Clock Buffer
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:8
  • Differential - Input:Output: Yes/Yes
  • Input: CMOS, HCSL
  • Output: HCSL
  • Frequency - Max: 133.46 MHz
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-TQFN (6x6)
Paket: -
Lager18.000
DMPH4026SFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
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DMTH45M5LFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paket: -
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1N4148WS-13-G
Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: -
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DMP2045UFY4-7
Diodes Incorporated

MOSFET P-CH 20V 4.7A X2-DFN2015

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 670mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN2015-3
  • Package / Case: 3-XDFN
Paket: -
Lager8.742
DMP1012UFDF-13
Diodes Incorporated

MOSFET P-CH 12V 12.6A/20A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
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BZT52C11SQ-7-F
Diodes Incorporated

ZENER DIODE SOD323 T&R 3K

  • Voltage - Zener (Nom) (Vz): 11 V
  • Tolerance: ±5.45%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
Paket: -
Request a Quote
DMP2036UVT-7
Diodes Incorporated

MOSFET P-CH 20V 6A TSOT26

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Request a Quote