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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Paket: E-Line-3 |
Lager3.344 |
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Diodes Incorporated |
MOSFET PCH 100V 1.7A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 1.2A, 6V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Paket: TO-261-4, TO-261AA |
Lager3.264 |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1808pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.03W (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Paket: 6-UDFN Exposed Pad |
Lager6.512 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta)
- Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Paket: TO-226-3, TO-92-3 (TO-226AA) |
Lager42.000 |
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Diodes Incorporated |
MOSFET 2P-CH 60V 4.8A 8-SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.8A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager2.992 |
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Diodes Incorporated |
MOSFET 2P-CH 20V 4.6A 8SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager30.000 |
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Diodes Incorporated |
TRANS NPN 100V 1A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Paket: E-Line-3, Formed Leads |
Lager2.672 |
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Diodes Incorporated |
TRANS PNP 30V 5.5A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 3W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Paket: TO-261-4, TO-261AA |
Lager253.920 |
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Diodes Incorporated |
TRANS PNP 50V 2A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Paket: TO-243AA |
Lager229.908 |
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Diodes Incorporated |
TRANS PNP 40V 2A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
- Power - Max: 600mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager7.648 |
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Diodes Incorporated |
TRANS 2NPN 120V 0.05A SOT26
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Paket: SOT-23-6 |
Lager277.956 |
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Diodes Incorporated |
DIODE GEN PURP 85V 215MA SOT523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 85V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
- Operating Temperature - Junction: -65°C ~ 150°C
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Paket: SOT-523 |
Lager3.408 |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 200MA SOT323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Operating Temperature - Junction: -65°C ~ 125°C
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Paket: SC-70, SOT-323 |
Lager236.832 |
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Diodes Incorporated |
DIODE ARRAY SBR 40V 5A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 440mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Paket: TO-220-3 |
Lager372.936 |
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Diodes Incorporated |
IC REG LINEAR 3.3V 1A TO252
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.7V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 90µA
- PSRR: 65dB ~ 45dB (1kHz ~ 10kHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.000 |
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Diodes Incorporated |
IC LED DRIVER RGLTR DIM
- Type: DC DC Regulator
- Topology: Step-Up (Boost)
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 16V
- Voltage - Output: -
- Current - Output / Channel: 1.4A (Switch)
- Frequency: 1MHz
- Dimming: PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager7.536 |
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Diodes Incorporated |
IC LED DRVR REG PWM U-DFN2020-6
- Type: DC DC Regulator
- Topology: Step-Up (Boost)
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 2.7V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 30V
- Current - Output / Channel: 40mA
- Frequency: 750kHz
- Dimming: PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type S)
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Paket: 6-UDFN Exposed Pad |
Lager4.384 |
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Diodes Incorporated |
IC BATT PROT LI-ION U-DFN2535
- Function: Battery Protection
- Battery Chemistry: Lithium-Ion/Polymer
- Number of Cells: 1
- Fault Protection: Over Current, Over Voltage, Short Circuit
- Interface: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2535-6
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Paket: 6-UDFN Exposed Pad |
Lager6.720 |
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Diodes Incorporated |
IC GATE XOR 1CH 2-INP SOT-25
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 5.5 V
- Current - Quiescent (Max): 200µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: 0.7 V ~ 0.8 V
- Logic Level - High: 1.7 V ~ 2 V
- Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-25
- Package / Case: SC-74A, SOT-753
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Paket: SC-74A, SOT-753 |
Lager162.240 |
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Diodes Incorporated |
IC 2:1 MUX/DEMUX QSOP
- Applications: Video
- Multiplexer/Demultiplexer Circuit: 2:1
- Switch Circuit: -
- Number of Channels: 4
- On-State Resistance (Max): 10 Ohm
- Voltage - Supply, Single (V+): 5V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: 400MHz
- Features: Bi-Directional, RGB
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: 16-QSOP
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Paket: 16-SSOP (0.154", 3.90mm Width) |
Lager364.728 |
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Diodes Incorporated |
IC CLOCK BUFFER MUX 2:4 20TSSOP
- Type: Fanout Buffer (Distribution), Multiplexer
- Number of Circuits: 1
- Ratio - Input:Output: 2:4
- Differential - Input:Output: Yes/Yes
- Input: LVCMOS, LVTTL
- Output: HCSL
- Frequency - Max: 250MHz
- Voltage - Supply: 2.375 V ~ 3.63 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager8.592 |
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Diodes Incorporated |
IC CLOCK GENERATOR TSSOP
- PLL: Yes
- Main Purpose: Ethernet, PCI Express (PCIe)
- Input: HCSL, Crystal
- Output: HCSL, LVDS
- Number of Circuits: 1
- Ratio - Input:Output: 1:4
- Differential - Input:Output: No/Yes
- Frequency - Max: 200MHz
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager7.760 |
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Diodes Incorporated |
ZENER DIODE SOD123 T&R 3K
- Voltage - Zener (Nom) (Vz): 5.1 V
- Tolerance: ±5.88%
- Power - Max: 370 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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Paket: - |
Lager9.000 |
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Diodes Incorporated |
LDO CMOS LOWCURR SOT89 T&R 2.5K
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.4V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 8 µA
- Current - Supply (Max): -
- PSRR: 85dB (1kHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Paket: - |
Lager447 |
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Diodes Incorporated |
DIODE ZENER 9.1V SOD523 T&R 3K
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±6.04%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 500 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
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Paket: - |
Request a Quote |
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Diodes Incorporated |
BRIDGE RECT 1P 1KV 1.5A 4SOPA
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 1.5 A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-SOPA
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Paket: - |
Request a Quote |
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Diodes Incorporated |
DIODE ZENER
- Voltage - Zener (Nom) (Vz): -
- Tolerance: -
- Power - Max: -
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Diodes Incorporated |
MOSFET N-CH 60V 15.5A/80A PWRDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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Paket: - |
Request a Quote |
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