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Infineon Technologies Produkte - Dioden - Gleichrichter - Einzeln

Aufzeichnungen 805
Page  17/29
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDH05G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1.2KV 5A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 33µA @ 1200V
  • Capacitance @ Vr, F: 301pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager7.872
1200V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
33µA @ 1200V
301pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDP30E120XKSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 50A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 243ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2
Lager9.396
1200V
50A (DC)
2.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
243ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 150°C
IDV30E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: PG-TO220-2 Full Pack
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2 Full Pack
Lager17.700
650V
30A (DC)
2.2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-40°C ~ 175°C
IDV20E65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 28A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 28A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: PG-TO220-2 Full Pack
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2 Full Pack
Lager21.132
650V
28A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-40°C ~ 175°C
IDV15E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager23.076
650V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
47ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDP08E65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager19.332
650V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDW40E65D1FKSA1
Infineon Technologies

DIODE GEN PURP 650V 80A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 129ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-247-3
Lager12.612
650V
80A
1.7V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
129ns
40µA @ 650V
-
Through Hole
TO-247-3
TO-247-3
-40°C ~ 175°C
IDP08E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager7.500
650V
8A
2.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDP15E65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 114ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager6.456
650V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
114ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDW75E60
Infineon Technologies

DIODE GEN PURP 600V 120A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 120A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 75A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 121ns
  • Current - Reverse Leakage @ Vr: 40µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-3
Lager17.940
600V
120A (DC)
2V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
121ns
40µA @ 600V
-
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDW15E65D2FKSA1
Infineon Technologies

DIODE GEN PURP 650V 30A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-247-3
Lager16.968
650V
30A
2.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
47ns
40µA @ 650V
-
Through Hole
TO-247-3
PG-TO247-3
-40°C ~ 175°C
IDP40E65D2XKSA1
Infineon Technologies

DIODE GEN PURP 650V 40A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager15.912
650V
40A
2.3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDW75D65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 150A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 150A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 108ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-247-3
Lager13.140
650V
150A (DC)
1.7V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
108ns
40µA @ 650V
-
Through Hole
TO-247-3
PG-TO247-3
-40°C ~ 175°C
IDP45E60XKSA1
Infineon Technologies

DIODE GEN PURP 600V 71A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 71A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager17.544
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDP30E65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 60A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 64ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager16.800
650V
60A (DC)
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
64ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
IDM10G120C5XTMA1
Infineon Technologies

DIODE SCHTKY 1200V 38A PGTO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 38A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 62µA @ 12V
  • Capacitance @ Vr, F: 29pF @ 800V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.688
1200V
38A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 12V
29pF @ 800V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 150°C
IDM08G120C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager3.648
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
IDH12SG60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager10.908
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH10SG60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 90µA @ 600V
  • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager9.240
600V
10A (DC)
2.1V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 600V
290pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDM05G120C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 1200V 5A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 33µA @ 1200V
  • Capacitance @ Vr, F: 301pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.968
1200V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
33µA @ 1200V
301pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
IDH08SG60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 70µA @ 600V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager19.728
600V
8A (DC)
2.1V @ 8A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDM02G120C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 1200V 2A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 18µA @ 1200V
  • Capacitance @ Vr, F: 182pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.680
1200V
2A (DC)
1.65V @ 2A
No Recovery Time > 500mA (Io)
0ns
18µA @ 1200V
182pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
IDB30E120ATMA1
Infineon Technologies

DIODE GEN PURP 1.2KV 50A TO263-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 243ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager13.518
1200V
50A (DC)
2.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
243ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 150°C
IDD03SG60CXTMA1
Infineon Technologies

DIODE SCHOTTKY 600V 3A TO252-3

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager18.654
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
BAS16E6433HTMA1
Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.872
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
IDH16G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 16A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 16A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager8.472
1200V
16A (DC)
1.95V @ 16A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
730pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH10G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 62µA @ 1200V
  • Capacitance @ Vr, F: 525pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager15.888
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 1200V
525pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH08G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-220-2
Lager8.172
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C