Page 192 - Infineon Technologies Produkte - Transistoren - FETs, MOSFET - Einzeln

IPW60R045CPAFKSA1

Infineon Technologies

MOSFET N-CH 650V 60A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 431W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager5.504

MOSFET (Metal Oxide)

600V

60A (Tc)

10V

3.5V @ 3mA

190nC @ 10V

6800pF @ 100V

±20V

-

431W (Tc)

45 mOhm @ 44A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPC60R045CPX1SA4

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.472

-

IRF300P226

Infineon Technologies

MOSFET IFX OPTIMOS TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager7.104

-

IPC60R041C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager7.120

-

SPW47N65C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 47A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 415W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager4.320

MOSFET (Metal Oxide)

650V

47A (Tc)

10V

3.9V @ 2.7mA

255nC @ 10V

7000pF @ 25V

±20V

-

415W (Tc)

70 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPC90R120C3X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.696

-

SPW47N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 600V 46A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 83 mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager5.232

MOSFET (Metal Oxide)

600V

46A (Tc)

10V

5V @ 2.9mA

322nC @ 10V

7700pF @ 25V

±20V

-

417W (Tc)

83 mOhm @ 29A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPT65R033G7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager4.944

-

IPT60R028G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 75A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 28.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

Paket: 8-PowerSFN

Lager6.544

MOSFET (Metal Oxide)

650V

75A (Tc)

10V

4V @ 1.44mA

123nC @ 10V

4820pF @ 400V

±20V

-

391W (Tc)

28 mOhm @ 28.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPC65R037C6X1SA2

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.792

-

SIPC69N60C3X1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager5.776

-

IPC65R080CFDX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.360

-

IPZ60R041P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41 mOhm @ 35.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

Paket: TO-247-4

Lager2.816

MOSFET (Metal Oxide)

600V

77.5A (Tc)

10V

4.5V @ 2.96mA

170nC @ 10V

8180pF @ 100V

±20V

-

481W (Tc)

41 mOhm @ 35.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IRF250P225

Infineon Technologies

MOSFET IFX OPTIMOS TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4897pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

Paket: TO-247-3

Lager6.000

MOSFET (Metal Oxide)

250V

69A (Tc)

10V

4V @ 270µA

96nC @ 10V

4897pF @ 50V

±20V

-

313W (Tc)

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

PTVA120121MV1R1KXUMA1

Infineon Technologies

RFP-LDH1V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager2.128

-

IPA65R045C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

Lager2.064

MOSFET (Metal Oxide)

650V

18A (Tc)

10V

4V @ 1.25mA

93nC @ 10V

4340pF @ 400V

±20V

-

35W (Tc)

45 mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPW60R075CPAFKSA1

Infineon Technologies

AUTOMOTIVE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager6.224

-

IRF200P223

Infineon Technologies

MOSFET IFX OPTIMOS TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5094pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

Paket: TO-247-3

Lager4.960

MOSFET (Metal Oxide)

200V

100A (Tc)

10V

4V @ 270µA

102nC @ 10V

5094pF @ 50V

±20V

-

313W (Tc)

11.5 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IRF300P227

Infineon Technologies

MOSFET IFX OPTIMOS TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4893pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

Paket: TO-247-3

Lager7.600

MOSFET (Metal Oxide)

300V

50A (Tc)

10V

4V @ 270µA

107nC @ 10V

4893pF @ 50V

±20V

-

313W (Tc)

40 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPC60R075CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager5.808

-

IPC50R045CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.168

-

IPC60R070C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager7.328

-

IPB60R040C7ATMA1

Infineon Technologies

MOSFET N-CH 600V TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Lager7.120

MOSFET (Metal Oxide)

650V

50A (Tc)

10V

4V @ 1.24mA

107nC @ 10V

4340pF @ 400V

±20V

-

227W (Tc)

40 mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

AUIRFP4568-E

Infineon Technologies

MOSFET N-CH 150V 171A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

Paket: TO-247-3

Lager2.768

MOSFET (Metal Oxide)

150V

171A (Tc)

10V

5V @ 250µA

227nC @ 10V

10470pF @ 50V

±30V

-

517W (Tc)

5.9 mOhm @ 103A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AD

TO-247-3

AUIRFP4568

Infineon Technologies

MOSFET N-CH 150V 171A AUTO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

Paket: TO-247-3

Lager2.864

MOSFET (Metal Oxide)

150V

171A (Tc)

10V

5V @ 250µA

227nC @ 10V

10470pF @ 50V

±30V

-

517W (Tc)

5.9 mOhm @ 103A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

SPW35N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 600V 34.1A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 118 mOhm @ 21.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager5.328

MOSFET (Metal Oxide)

600V

34.1A (Tc)

10V

5V @ 1.9mA

212nC @ 10V

5060pF @ 25V

±20V

-

313W (Tc)

118 mOhm @ 21.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPZ65R065C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

Paket: TO-247-4

Lager3.376

MOSFET (Metal Oxide)

650V

33A (Tc)

10V

4V @ 850µA

64nC @ 10V

3020pF @ 400V

±20V

-

171W (Tc)

65 mOhm @ 17.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

SIPC46N60CFDX1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager4.288

-

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPW60R045CPAFKSA1	Infineon Technologies	MOSFET N-CH 650V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 431W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager5.504	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	3.5V @ 3mA	190nC @ 10V	6800pF @ 100V	±20V	-	431W (Tc)	45 mOhm @ 44A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC60R045CPX1SA4	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.472	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF300P226	Infineon Technologies	MOSFET IFX OPTIMOS TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager7.104	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC60R041C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager7.120	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPW47N65C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager4.320	MOSFET (Metal Oxide)	650V	47A (Tc)	10V	3.9V @ 2.7mA	255nC @ 10V	7000pF @ 25V	±20V	-	415W (Tc)	70 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC90R120C3X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPW47N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 600V 46A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.9mA Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 83 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager5.232	MOSFET (Metal Oxide)	600V	46A (Tc)	10V	5V @ 2.9mA	322nC @ 10V	7700pF @ 25V	±20V	-	417W (Tc)	83 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPT65R033G7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager4.944	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT60R028G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 75A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 28.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Paket: 8-PowerSFN	Lager6.544	MOSFET (Metal Oxide)	650V	75A (Tc)	10V	4V @ 1.44mA	123nC @ 10V	4820pF @ 400V	±20V	-	391W (Tc)	28 mOhm @ 28.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPC65R037C6X1SA2	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.792	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC69N60C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager5.776	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC65R080CFDX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.360	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPZ60R041P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 35.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Paket: TO-247-4	Lager2.816	MOSFET (Metal Oxide)	600V	77.5A (Tc)	10V	4.5V @ 2.96mA	170nC @ 10V	8180pF @ 100V	±20V	-	481W (Tc)	41 mOhm @ 35.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IRF250P225	Infineon Technologies	MOSFET IFX OPTIMOS TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4897pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Paket: TO-247-3	Lager6.000	MOSFET (Metal Oxide)	250V	69A (Tc)	10V	4V @ 270µA	96nC @ 10V	4897pF @ 50V	±20V	-	313W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
PTVA120121MV1R1KXUMA1	Infineon Technologies	RFP-LDH1V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager2.128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA65R045C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Paket: TO-220-3 Full Pack	Lager2.064	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	4V @ 1.25mA	93nC @ 10V	4340pF @ 400V	±20V	-	35W (Tc)	45 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R075CPAFKSA1	Infineon Technologies	AUTOMOTIVE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager6.224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF200P223	Infineon Technologies	MOSFET IFX OPTIMOS TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5094pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Paket: TO-247-3	Lager4.960	MOSFET (Metal Oxide)	200V	100A (Tc)	10V	4V @ 270µA	102nC @ 10V	5094pF @ 50V	±20V	-	313W (Tc)	11.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRF300P227	Infineon Technologies	MOSFET IFX OPTIMOS TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4893pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Paket: TO-247-3	Lager7.600	MOSFET (Metal Oxide)	300V	50A (Tc)	10V	4V @ 270µA	107nC @ 10V	4893pF @ 50V	±20V	-	313W (Tc)	40 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPC60R075CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager5.808	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC50R045CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC60R070C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager7.328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB60R040C7ATMA1	Infineon Technologies	MOSFET N-CH 600V TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Lager7.120	MOSFET (Metal Oxide)	650V	50A (Tc)	10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	±20V	-	227W (Tc)	40 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
AUIRFP4568-E	Infineon Technologies	MOSFET N-CH 150V 171A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Paket: TO-247-3	Lager2.768	MOSFET (Metal Oxide)	150V	171A (Tc)	10V	5V @ 250µA	227nC @ 10V	10470pF @ 50V	±30V	-	517W (Tc)	5.9 mOhm @ 103A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD	TO-247-3
AUIRFP4568	Infineon Technologies	MOSFET N-CH 150V 171A AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Paket: TO-247-3	Lager2.864	MOSFET (Metal Oxide)	150V	171A (Tc)	10V	5V @ 250µA	227nC @ 10V	10470pF @ 50V	±30V	-	517W (Tc)	5.9 mOhm @ 103A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SPW35N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 600V 34.1A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 118 mOhm @ 21.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager5.328	MOSFET (Metal Oxide)	600V	34.1A (Tc)	10V	5V @ 1.9mA	212nC @ 10V	5060pF @ 25V	±20V	-	313W (Tc)	118 mOhm @ 21.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPZ65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Paket: TO-247-4	Lager3.376	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	±20V	-	171W (Tc)	65 mOhm @ 17.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
SIPC46N60CFDX1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager4.288	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-