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Infineon Technologies Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 8.381
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Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IWM023N08NM5XUMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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BSB014N04LX3GXUMA1
Infineon Technologies

MOSFET N-CH 40V 36A/180A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M™
  • Package / Case: 3-WDSON
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
36A (Ta), 180A (Tc)
4.5V, 10V
2V @ 250µA
196 nC @ 10 V
16900 pF @ 20 V
±20V
-
2.8W (Ta), 89W (Tc)
1.4mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
IPI90R500C3XKSA2
Infineon Technologies

MOSFET N-CH 900V 11A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Paket: -
Lager1.914
MOSFET (Metal Oxide)
900 V
11A (Tc)
10V
3.5V @ 740µA
68 nC @ 10 V
1700 pF @ 100 V
±20V
-
156W (Tc)
500mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
IPP60R070CFD7XKSA1
Infineon Technologies

MOSFET N-CH 650V 31A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 760µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
650 V
31A (Tc)
10V
4.5V @ 760µA
67 nC @ 10 V
2721 pF @ 400 V
±20V
-
156W (Tc)
70mOhm @ 15.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IAUCN08S7N013ATMA1
Infineon Technologies

MOSFET_(75V 120V(

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 219W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-53
  • Package / Case: 8-PowerTDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
80 V
274A (Tj)
7V, 10V
3.2V @ 130µA
116 nC @ 10 V
8402 pF @ 40 V
±20V
-
219W (Tc)
1.3mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
IPB65R050CFD7AATMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Request a Quote
MOSFET (Metal Oxide)
650 V
45A (Tc)
10V
4.5V @ 1.24mA
102 nC @ 10 V
4975 pF @ 400 V
±30V
-
227W (Tc)
50mOhm @ 24.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SISC262SN06LX6SA1
Infineon Technologies

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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IQE057N10NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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BSC011N03LSATMA1
Infineon Technologies

MOSFET N-CH 30V 37A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
Paket: -
Lager125.160
MOSFET (Metal Oxide)
30 V
37A (Ta), 100A (Tc)
4.5V, 10V
2.2V @ 250µA
72 nC @ 10 V
4700 pF @ 15 V
±20V
-
2.5W (Ta), 96W (Tc)
1.1mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IPW90R340C3XKSA1
Infineon Technologies

MOSFET N-CH 900V 15A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-21
  • Package / Case: TO-247-3
Paket: -
Lager144
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
3.5V @ 1mA
94 nC @ 10 V
2400 pF @ 100 V
±20V
-
208W (Tc)
340mOhm @ 9.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-21
TO-247-3
IMZA65R040M2HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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IPP147N12N3GXKSA1
Infineon Technologies

MOSFET N-CH 120V 56A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 61µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paket: -
Lager53.151
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
4V @ 61µA
49 nC @ 10 V
3220 pF @ 60 V
±20V
-
107W (Tc)
14.7mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IAUC24N10S5L300ATMA1
Infineon Technologies

MOSFET N-CH 100V 24A TDSON-8-33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 12µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
Paket: -
Lager15.018
MOSFET (Metal Oxide)
100 V
24A (Tc)
4.5V, 10V
2.2V @ 12µA
11 nC @ 10 V
670 pF @ 50 V
±20V
-
38W (Tc)
30mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
AUXCLF1404STRL
Infineon Technologies

MOSFET N-CH 40V 162A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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IQE004NE1LM7CGSCATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 2V @ 432µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
  • Vgs (Max): ±7V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHTFN-9
  • Package / Case: 9-PowerWDFN
Paket: -
Lager32.748
MOSFET (Metal Oxide)
15 V
58A (Ta), 379A (Tc)
4.5V, 7V
2V @ 432µA
55 nC @ 7 V
6240 pF @ 7.5 V
±7V
-
2.1W (Ta), 89W (Tc)
0.45mOhm @ 30A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
PG-WHTFN-9
9-PowerWDFN
ISC035N10NM5LF2ATMA1
Infineon Technologies

ISC035N10NM5LF2ATMA1 MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 115µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
100 V
19A (Ta), 164A (Tc)
10V
3.9V @ 115µA
88 nC @ 10 V
7200 pF @ 50 V
±20V
-
3W (Ta), 217W (Tc)
3.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
SPI15N60CFD
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
600 V
13.4A (Tc)
10V
5V @ 750µA
84 nC @ 10 V
1820 pF @ 25 V
±20V
-
156W (Tc)
330mOhm @ 9.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
SPS03N60C3
Infineon Technologies

MOSFET N-CH 600V 3.2A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3-11
  • Package / Case: TO-251-3 Stub Leads, IPAK
Paket: -
Request a Quote
MOSFET (Metal Oxide)
600 V
3.2A (Tc)
10V
3.9V @ 135µA
17 nC @ 10 V
400 pF @ 25 V
±20V
-
38W (Tc)
1.4Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3-11
TO-251-3 Stub Leads, IPAK
IGO60R070D1AUMA1
Infineon Technologies

GANFET N-CH 600V 31A 20DSO

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-20-85
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Paket: -
Request a Quote
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-
380 pF @ 400 V
-10V
-
125W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
IGO60R070D1AUMA2
Infineon Technologies

GAN HV

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-20-85
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Paket: -
Lager2.400
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-
380 pF @ 400 V
-10V
-
125W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
IAUC120N06S5N022ATMA1
Infineon Technologies

MOSFET_)40V 60V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 65µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-34
  • Package / Case: 8-PowerTDFN
Paket: -
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MOSFET (Metal Oxide)
60 V
170A (Tj)
7V, 10V
3.4V @ 65µA
68 nC @ 10 V
4930 pF @ 30 V
±20V
-
136W (Tc)
2.24mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
IPA65R190DEXKSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFL4310TR
Infineon Technologies

MOSFET N-CH 100V 1.6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: -
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MOSFET (Metal Oxide)
100 V
1.6A (Ta)
-
4V @ 250µA
25 nC @ 10 V
330 pF @ 25 V
-
-
-
200mOhm @ 1.6A, 10V
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
BSS139IXTMA1
Infineon Technologies

MOSFET N-CH 250V 100MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 56µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3-5
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
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MOSFET (Metal Oxide)
250 V
100mA (Ta)
0V, 10V
1V @ 56µA
2.3 nC @ 5 V
60 pF @ 25 V
±20V
Depletion Mode
360mW (Ta)
14Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3-5
TO-236-3, SC-59, SOT-23-3
IPB018N06NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 129µA
  • Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Lager1.449
MOSFET (Metal Oxide)
60 V
34A (Ta), 187A (Tc)
6V, 10V
3.3V @ 129µA
162 nC @ 10 V
7300 pF @ 30 V
±20V
-
3.8W (Ta), 188W (Tc)
1.8mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPZ40N04S5L3R6ATMA1
Infineon Technologies

MOSFET_(20V 40V) PG-TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 21µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-33
  • Package / Case: 8-PowerTDFN
Paket: -
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MOSFET (Metal Oxide)
40 V
87A (Tj)
4.5V, 10V
2V @ 21µA
32.8 nC @ 10 V
1966 pF @ 25 V
±16V
-
58W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-33
8-PowerTDFN
IRL540NSTRL
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Request a Quote
MOSFET (Metal Oxide)
100 V
36A (Tc)
-
2V @ 250µA
74 nC @ 5 V
1800 pF @ 25 V
-
-
-
44mOhm @ 18A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF7410PBF
Infineon Technologies

MOSFET P-CH 12V 16A 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
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MOSFET (Metal Oxide)
12 V
16A (Ta)
1.8V, 4.5V
900mV @ 250µA
91 nC @ 4.5 V
8676 pF @ 10 V
±8V
-
2.5W (Ta)
7mOhm @ 16A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)