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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 85nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Paket: Die |
Lager3.424 |
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Infineon Technologies |
IC DISCRETE 600V TO252-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.192 |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6852pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Paket: DirectFET? Isometric MX |
Lager6.096 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager4.432 |
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Infineon Technologies |
MOSFET N-CH 600V TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
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Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Lager7.552 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager3.664 |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager62.388 |
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Infineon Technologies |
MOSFET P-CH 100V 4A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 319pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager30.000 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager365.100 |
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Infineon Technologies |
MOSFET N/P-CH 20V 1.5A TSOP-6
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager26.778 |
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Infineon Technologies |
IC CONV PENTIUM II TO220-5
- Applications: Converter, Intel Pentium? II
- Voltage - Input: 3 V ~ 7 V
- Number of Outputs: 2
- Voltage - Output: 1.5V, 2.5V
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220AB (5-LEAD)
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Paket: TO-220-5 |
Lager5.952 |
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Infineon Technologies |
IC REG BUCK ADJ 40A SYNC LGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 3V
- Voltage - Input (Max): 13.2V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 3.3V
- Current - Output: 40A
- Frequency - Switching: 300kHz ~ 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Power Block (LGA)
- Supplier Device Package: LGA (11x11)
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Paket: Power Block (LGA) |
Lager468.708 |
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Infineon Technologies |
IC PFC CTRLR AVERAGE CURR DSO16
- Mode: -
- Frequency - Switching: -
- Current - Startup: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager2.944 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 210mA, 360mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager75.936 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-LQFP (14x14)
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Paket: 100-LQFP Exposed Pad |
Lager5.808 |
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Infineon Technologies |
IC MCU 8BIT 32KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: -
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Paket: 64-LQFP |
Lager4.752 |
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Infineon Technologies |
IC EEPROM 10KBIT INTELLIG MCC2-2
- Type: RFID Transponder
- Frequency: 13.56MHz
- Standards: ISO 15693, ISO 18000-3
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 70°C
- Package / Case: MCC2 Chip Card Module
- Supplier Device Package: P-MCC2-2-1
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Paket: MCC2 Chip Card Module |
Lager3.598 |
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Infineon Technologies |
KIT SAMPLE FSK 50OHM TX 434MHZ
- Type: Transmitter
- Frequency: 434MHz
- For Use With/Related Products: -
- Supplied Contents: 2 Boards, Documentation
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Paket: - |
Lager6.534 |
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Infineon Technologies |
IC TXRX CAN LITE SBC 2MBPS
- Type: System Basis Chip (SBC)
- Applications: CAN Automotive
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-24-1
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Paket: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Lager26.526 |
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Infineon Technologies |
16 BIT FLASH C11 BCS
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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Paket: 100-LQFP Exposed Pad |
Lager5.088 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Lager1.500 |
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Infineon Technologies |
DIODE SIC 1.2KV 11.8A TO263-1
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 11.8A
- Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
- Capacitance @ Vr, F: 182pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: - |
Lager2.664 |
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Infineon Technologies |
IC SRAM NON VOLATILE 48FBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Paket: - |
Request a Quote |
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Infineon Technologies |
FRAM
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 40 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 9 ns
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFLGA
- Supplier Device Package: 8-UFLGA (3.28x3.23)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC CONTROLLER
- Applications: -
- Current - Supply: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 700V 10A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 7.1W (Tc)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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Paket: - |
Lager2.232 |
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Infineon Technologies |
MOSFET 2N-CH 40V 43A 8PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Power - Max: 34W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
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Paket: - |
Request a Quote |
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