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Infineon Technologies |
IGBT 1200V 50A 179W TO247
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 179W
- Switching Energy: 620µJ (off)
- Input Type: Standard
- Gate Charge: 85nC
- Td (on/off) @ 25°C: -/160ns
- Test Condition: 600V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Paket: TO-247-3 |
Lager4.896 |
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Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager6.880 |
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Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager2.528 |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager2.240 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager6.608 |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.4A MICRO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
- Power - Max: 1.3W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: Micro8?
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Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Lager720.000 |
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Infineon Technologies |
IC TRANSISTOR RF NPN TSFP-4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- Frequency - Transition: 85GHz
- Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
- Gain: 35dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: 4-TSFP
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Paket: SC-82A, SOT-343 |
Lager2.224 |
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Infineon Technologies |
IC PWR MOD PLUG-N-DRIVE 600V 6A
- Type: IGBT
- Configuration: 3 Phase
- Current: 6A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
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Paket: 23-PowerSIP Module, 19 Leads, Formed Leads |
Lager5.248 |
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Infineon Technologies |
DIODE RF SW 35V 100MA SCD80
- Diode Type: Standard - Single
- Voltage - Peak Reverse (Max): 35V
- Current - Max: 100mA
- Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
- Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
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Paket: SC-80 |
Lager2.448 |
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Infineon Technologies |
DIODE PIN ANTI 80V 100MA TSLP4-7
- Diode Type: PIN - 2 Independent
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-XFDFN
- Supplier Device Package: PG-TSLP-4
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Paket: 4-XFDFN |
Lager4.352 |
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Infineon Technologies |
IC REG LINEAR 150MA 8DSO-16
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-16
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager6.768 |
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Infineon Technologies |
IC REG BUCK ADJ 1.8A 8DSO
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.75V
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 16V
- Current - Output: 1.8A
- Frequency - Switching: 370kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager7.312 |
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Infineon Technologies |
IC GATE DRVR 600V 3PHASE 28TSSOP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 13 V ~ 17.5 V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 620V
- Rise / Fall Time (Typ): 60ns, 26ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-28
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Paket: 28-TSSOP (0.173", 4.40mm Width) |
Lager6.000 |
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Infineon Technologies |
IC MOTOR DRIVER 600V 23DIP
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 5 Ohm
- Current - Output / Channel: 1.2A
- Current - Peak Output: 9A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 400V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Through Hole
- Package / Case: 23-DIP Module
- Supplier Device Package: 23-DIPA
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Paket: 23-DIP Module |
Lager6.528 |
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Infineon Technologies |
IC CODEC PROGRAMMABLE MQFP-64
- Function: CODEC Filter
- Interface: PCM, SPI
- Number of Circuits: 4
- Voltage - Supply: 5V
- Current - Supply: 26mA
- Power (Watts): 130mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 64-QFP
- Supplier Device Package: P-64-MQFP
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Paket: 64-QFP |
Lager2.096 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 144MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 111
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: External
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 144-BQFP
- Supplier Device Package: PG-MQFP-144
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Paket: 144-BQFP |
Lager5.008 |
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Infineon Technologies |
IC HISIDE PWR SWITCH 4CH PDSO-20
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager5.744 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 6500V 500A 9600W
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 6500 V
- Current - Collector (Ic) (Max): 500 A
- Power - Max: 9600 W
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 500A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
ECONODUAL 3 WITH TRENCHSTOP IGBT
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
- Current - Collector Cutoff (Max): 35 µA
- Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD
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Paket: - |
Request a Quote |
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Infineon Technologies |
DIODE MODULE GP 800V 171A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io) (per Diode): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 800 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
PNOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 256Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (9x9)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 2MB FLASH 180LFBGA
- Core Processor: TriCore™
- Core Size: 32-Bit Single-Core
- Speed: 300MHz
- Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
- Peripherals: DMA, I2S, LVDS, PWM, WDT
- Number of I/O: -
- Program Memory Size: 2MB (2M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.54K x 8
- Voltage - Supply (Vcc/Vdd): 3.3V, 5V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 180-LFBGA
- Supplier Device Package: PG-LFBGA-180-1
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 650V 100A 335W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
TRENCH >=100V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 45A 205W
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 45 A
- Power - Max: 205 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Lager75 |
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Infineon Technologies |
MOSFET N-CH 150V 32A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 32µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Paket: - |
Lager8.388 |
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Infineon Technologies |
IC GATE NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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