IXYS Integrated Circuits Division Produkte - Transistoren - FETs, MOSFET - Einzeln | Heisener Electronics
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IXYS Integrated Circuits Division Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 25
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Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CPC3730C
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 Ohm @ 140mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager6.832
MOSFET (Metal Oxide)
350V
-
0V
-
-
200pF @ 25V
±20V
Depletion Mode
1.6W (Ta)
35 Ohm @ 140mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3720C
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 Ohm @ 130mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager2.784
MOSFET (Metal Oxide)
350V
-
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.4W (Ta)
22 Ohm @ 130mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3714C
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 240mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager7.168
MOSFET (Metal Oxide)
350V
-
0V
-
-
100pF @ 25V
±15V
Depletion Mode
1.4W (Ta)
14 Ohm @ 240mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3710C
IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager6.176
MOSFET (Metal Oxide)
250V
-
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.4W (Ta)
10 Ohm @ 220mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3701C
IXYS Integrated Circuits Division

MOSFET N-CH 60V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager4.144
MOSFET (Metal Oxide)
60V
-
0V
-
-
-
±15V
Depletion Mode
1.1W (Ta)
1 Ohm @ 300mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3703C
IXYS Integrated Circuits Division

MOSFET N-CH 250V 360MA SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89-3
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager2.112
MOSFET (Metal Oxide)
250V
360mA (Ta)
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.6W (Ta)
4 Ohm @ 200mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89-3
TO-243AA
CPC3703ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager5.152
MOSFET (Metal Oxide)
250V
-
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.1W (Ta)
4 Ohm @ 200mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3708ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V 0.005A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -0.35V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager5.120
MOSFET (Metal Oxide)
350V
5mA (Ta)
-0.35V
-
-
300pF @ 0V
±20V
Depletion Mode
2.5W (Ta)
14 Ohm @ 50mA, 350mV
-40°C ~ 110°C (TA)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3708CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V 0.005A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -0.35V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager2.160
MOSFET (Metal Oxide)
350V
5mA (Ta)
-0.35V
-
-
300pF @ 0V
±20V
Depletion Mode
1.1W (Ta)
14 Ohm @ 50mA, 350mV
-40°C ~ 110°C (TA)
Surface Mount
SOT-89
TO-243AA
CPC3902CTR
IXYS Integrated Circuits Division

MOSFET N-CH 250V TO-243AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager2.288
MOSFET (Metal Oxide)
250V
-
0V
-
-
230pF @ 20V
±15V
Depletion Mode
1.8W (Ta)
2.5 Ohm @ 300mA, 0V
125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3701CTR
IXYS Integrated Circuits Division

MOSFET N-CH 60V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager4.160
MOSFET (Metal Oxide)
60V
-
0V
-
-
-
±15V
Depletion Mode
1.1W (Ta)
1 Ohm @ 300mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3710CTR
IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager6.304
MOSFET (Metal Oxide)
250V
-
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.4W (Ta)
10 Ohm @ 220mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-89
TO-243AA
CPC3909ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager4.576
MOSFET (Metal Oxide)
400V
300mA (Ta)
0V
-
-
-
15V
Depletion Mode
2.5W (Ta)
9 Ohm @ 300mA, 0V
-40°C ~ 110°C (TA)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3909CTR
IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager3.536
MOSFET (Metal Oxide)
400V
300mA (Ta)
0V
-
-
-
15V
Depletion Mode
1.1W (Ta)
9 Ohm @ 300mA, 0V
-40°C ~ 110°C (TA)
Surface Mount
SOT-89
TO-243AA
CPC3902ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager2.464
MOSFET (Metal Oxide)
250V
-
0V
-
-
230pF @ 20V
±15V
Depletion Mode
1.8W (Tc)
2.5 Ohm @ 300mA, 0V
125°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3960ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 600V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 44 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager22.704
MOSFET (Metal Oxide)
600V
-
0V
-
-
100pF @ 25V
±15V
Depletion Mode
1.8W (Ta)
44 Ohm @ 100mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3982TTR
IXYS Integrated Circuits Division

MOSFET N-CH 800V SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 380 Ohm @ 20mA, 0V
  • Operating Temperature: -55°C ~ 110°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.624
MOSFET (Metal Oxide)
800V
-
0V
-
-
20pF @ 25V
±15V
Depletion Mode
400mW (Ta)
380 Ohm @ 20mA, 0V
-55°C ~ 110°C (TA)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
CPC5603CTR
IXYS Integrated Circuits Division

MOSFET N-CH 415V 5MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 415V
  • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -0.35V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager15.606
MOSFET (Metal Oxide)
415V
5mA (Ta)
-0.35V
-
-
300pF @ 0V
±20V
Depletion Mode
2.5W (Ta)
14 Ohm @ 50mA, 350mV
-40°C ~ 85°C (TA)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3980ZTR
IXYS Integrated Circuits Division

MOSFET N-CH 800V SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager101.886
MOSFET (Metal Oxide)
800V
-
0V
-
-
115pF @ 25V
±15V
Depletion Mode
1.8W (Ta)
45 Ohm @ 100mA, 0V
-55°C ~ 125°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot CPC5602CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V 5MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -0.35V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager506.640
MOSFET (Metal Oxide)
350V
5mA (Ta)
-0.35V
-
-
300pF @ 0V
±20V
Depletion Mode
2.5W (Ta)
14 Ohm @ 50mA, 350mV
-40°C ~ 85°C (TA)
Surface Mount
SOT-223
TO-261-4, TO-261AA
CPC3703CTR
IXYS Integrated Circuits Division

MOSFET N-CH 250V 360MA SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89-3
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager350.388
MOSFET (Metal Oxide)
250V
360mA (Ta)
0V
-
-
350pF @ 25V
±15V
Depletion Mode
1.1W (Ta)
4 Ohm @ 200mA, 0V
-55°C ~ 125°C (TA)
Surface Mount
SOT-89-3
TO-243AA
CPC3730CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350 V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
350 V
140mA (Ta)
-
-
-
200 pF @ 25 V
-
Depletion Mode
-
35Ohm @ 140mA, 0V
-
Surface Mount
SOT-89
TO-243AA
CPC3714CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
350 V
-
-
-
-
100 pF @ 25 V
-
Depletion Mode
-
14Ohm @ 240mA, 0V
-
Surface Mount
SOT-89
TO-243AA
CPC3981ZTR
IXYS Integrated Circuits Division

MOSFET N-CH DEP 800V 45OH SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: 3.1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-2L
  • Package / Case: TO-261-3
Paket: -
Lager8.685
MOSFET (Metal Oxide)
800 V
100mA
0V
3.1V @ 1µA
-
105 pF @ 25 V
±15V
Depletion Mode
2.25W (Ta)
45Ohm @ 100mA, 0V
150°C (TJ)
Surface Mount
SOT-223-2L
TO-261-3
CPC3720CTR
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89
  • Package / Case: TO-243AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
350 V
-
-
-
-
350 pF @ 25 V
-
Depletion Mode
-
22Ohm @ 130mA, 0V
-
Surface Mount
SOT-89
TO-243AA