IXYS Produkte

IXGR50N60B

IXYS

IGBT 600V 75A 250W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: 250W
• Switching Energy: 3mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 50ns/110ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IXSA15N120B

IXYS

IGBT 1200V 30A 150W TO263AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
• Power - Max: 150W
• Switching Energy: 1.75mJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: 30ns/148ns
• Test Condition: 960V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 AA (IXSA)

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGR50N60C2

IXYS

IGBT 600V 75A 200W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
• Power - Max: 200W
• Switching Energy: 380µJ (off)
• Input Type: Standard
• Gate Charge: 138nC
• Td (on/off) @ 25°C: 18ns/115ns
• Test Condition: 480V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IXGQ96N30TBD1

IXYS

IGBT 320V 96A TO3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 320V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

Paket: TO-3P-3, SC-65-3

IXGH42N30C3

IXYS

IGBT 300V 223W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
• Power - Max: 223W
• Switching Energy: 120µJ (on), 150µJ (off)
• Input Type: Standard
• Gate Charge: 76nC
• Td (on/off) @ 25°C: 21ns/113ns
• Test Condition: 200V, 21A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

IXBK55N300

IXYS

IGBT 3000V 130A 625W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 600A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
• Power - Max: 625W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 335nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.9µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

Paket: TO-264-3, TO-264AA

IXGN60N60

IXYS

IGBT 600V 100A SOT-227B

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Power - Max: 250W
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
• Current - Collector Cutoff (Max): 200µA
• Input Capacitance (Cies) @ Vce: 4nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

IXYN100N65C3H1

IXYS

IGBT XPT 650V 166A SOT-227B

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 166A
• Power - Max: 600W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
• Current - Collector Cutoff (Max): 50µA
• Input Capacitance (Cies) @ Vce: 4.98nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

IXFH80N085

IXYS

MOSFET N-CH 85V 80A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXTN5N250

IXYS

MOSFET N-CH 2500V 5A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 700W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

IXFK25N90

IXYS

MOSFET N-CH 900V 25A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 560W (Tc)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

Paket: TO-264-3, TO-264AA

IXFP18N60X

IXYS

MOSFET N-CH 600V 18A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 320W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

IXFA7N80P

IXYS

MOSFET N-CH 800V 7A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 1.44 Ohm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFH80N65X2

IXYS

MOSFET N-CH 650V 80A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

IXTP160N10T

IXYS

MOSFET N-CH 100V 160A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

IXFK80N60P3

IXYS

MOSFET N-CH 600V 80A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1300W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

Paket: TO-264-3, TO-264AA

GWM160-0055X1-SLSAM

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Flat Leads
• Supplier Device Package: ISOPLUS-DIL?

Paket: 17-SMD, Flat Leads

MCA700-18IO1W

IXYS

SCR THRYRISTOR CA 1800V WC-500

• Structure: Common Anode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 700A
• Current - On State (It (RMS)) (Max): 1331A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-500

Paket: WC-500

VCO132-12IO7

IXYS

MOD THYRISTOR 1200V 130A ECOPAC2

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 130A
• Current - On State (It (RMS)) (Max): 200A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A, 3850A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

Paket: ECO-PAC2

DSEI120-12A

IXYS

DIODE GEN PURP 1.2KV 75A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 3mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-247-2

DSEI2X61-06P

IXYS

DIODE MODULE 600V 60A ECO-PAC1

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

Paket: ECO-PAC1

DSA10C150UC-TUB

IXYS

DIODE ARR SCHOTT 150V 5A TO252AA

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 860 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

Paket: -

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CLA60MT1200NHR

IXYS

TRIAC 1.2KV 66A ISO247

• Triac Type: Standard
• Voltage - Off State: 1.2 kV
• Current - On State (It (RMS)) (Max): 66 A
• Voltage - Gate Trigger (Vgt) (Max): 1.3 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
• Current - Gate Trigger (Igt) (Max): 60 mA
• Current - Hold (Ih) (Max): 60 mA
• Configuration: Single
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247

Paket: -

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IXFA90N20X3

IXYS

MOSFET N-CH 200V 90A TO263AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AA (IXFA)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

MXB12R600DPHFC

IXYS

MOSFET N-CH 600V 15A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC™
• Package / Case: ISOPLUSi5-PAK™

Paket: -

IXTY44N10T-TRL

IXYS

MOSFET N-CH 100V 44A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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IXTA20N65X2

IXYS

MOSFET N-CH 650V 20A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

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DPG10I600APA

IXYS

PWR DIODE DISC-FRED TO-220AB / T

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paket: -

Request a Quote