IXYS Produkte

IXGK120N120B3

IXYS

IGBT 1200V 200A 830W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 370A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
• Power - Max: 830W
• Switching Energy: 5.5mJ (on), 5.8mJ (off)
• Input Type: Standard
• Gate Charge: 470nC
• Td (on/off) @ 25°C: 36ns/275ns
• Test Condition: 600V, 100A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

Paket: TO-264-3, TO-264AA

VIO75-06P1

IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 69A
• Power - Max: 208W
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector Cutoff (Max): 800µA
• Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Paket: ECO-PAC2

MWI100-12A8

IXYS

MOD IGBT SIXPACK RBSOA 1200V E3

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 640W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
• Current - Collector Cutoff (Max): 6.3mA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

Paket: E3

MII145-12A3

IXYS

MOD IGBT RBSOA 1200V 160A Y4-M5

• IGBT Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 700W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector Cutoff (Max): 6mA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Supplier Device Package: Y4-M5

Paket: Y4-M5

MWI50-06A7T

IXYS

MOD IGBT SIXPACK RBSOA 600V E2

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 72A
• Power - Max: 225W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector Cutoff (Max): 600µA
• Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2
• Supplier Device Package: E2

Paket: E2

MMIX4G20N250

IXYS

MOSFET N-CH

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 23A
• Power - Max: 100W
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
• Current - Collector Cutoff (Max): 10µA
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SMD Module, 9 Leads
• Supplier Device Package: SMPD

Paket: 24-SMD Module, 9 Leads

IXFC24N50Q

IXYS

MOSFET N-CH ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

Paket: ISOPLUS220?

IXFX30N110P

IXYS

MOSFET N-CH 1100V 30A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1100V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paket: TO-247-3

IXFN240N15T2

IXYS

MOSFET N-CH 150V 240A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 240A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

IXFH22N60P

IXYS

MOSFET N-CH 600V 22A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXTP2N60P

IXYS

MOSFET N-CH 600V 2A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

IXFN32N100Q3

IXYS

MOSFET N-CH 1000V 28A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 28A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

IXFN55N50F

IXYS

MOSFET N-CH 500V 55A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

MCA700-22IO1W

IXYS

SCR THRYRISTOR CA 2200V WC-500

• Structure: Common Anode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2200V
• Current - On State (It (AV)) (Max): 700A
• Current - On State (It (RMS)) (Max): 1331A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: WC-500

Paket: WC-500

DSEP8-02A

IXYS

DIODE GEN PURP 200V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

MDA600-18N1

IXYS

DIODE MODULE 1.8KV 883A

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 1800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: Module

DPG120C300QB

IXYS

DIODE ARRAY GP 300V 60A TO3P

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 300V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

Paket: TO-3P-3, SC-65-3

DSSK40-006B

IXYS

DIODE ARRAY SCHOTTKY 60V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

Paket: TO-3P-3 Full Pack

DSP25-16A

IXYS

DIODE ARRAY GP 1600V 28A TO247AD

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 28A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 180°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

Paket: TO-3P-3 Full Pack

VUC25-16GO2

IXYS

DIODE BRIDGE FAST 1600V KAMM-MOD

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
• Current - Reverse Leakage @ Vr: 5mA @ 1600V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: KAMM
• Supplier Device Package: KAMM

Paket: KAMM

UGB6124AG

IXYS

IC MOD DIODE 1PHASE BRIDGE UGB1

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 10500V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: UGB-1
• Supplier Device Package: UGB-1

Paket: UGB-1

IXDI514D1T/R

IXYS

IC GATE DRIVER SGL 14A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

Paket: 6-VDFN Exposed Pad

IXA531S10T/R

IXYS

IC BRIDGE DRVR 3PH 500MA 48-MLP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 8 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 650V
• Rise / Fall Time (Typ): 125ns, 50ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN
• Supplier Device Package: 48-MLP

Paket: 48-VFQFN

MDMA240UB1600ED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.2 kV
• Current - Average Rectified (Io): 240 A
• Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A
• Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2
• Supplier Device Package: E2

Paket: -

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CMA80MT1600NHR

IXYS

TRIAC 1.6KV 88A ISO247

• Triac Type: Standard
• Voltage - Off State: 1.6 kV
• Current - On State (It (RMS)) (Max): 88 A
• Voltage - Gate Trigger (Vgt) (Max): 1.7 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
• Current - Gate Trigger (Igt) (Max): 70 mA
• Current - Hold (Ih) (Max): 70 mA
• Configuration: Single
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247

Paket: -

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DCG17P1200HR

IXYS

DIODE SCHOTTKY 1.2KV 18A ISO247

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
• Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

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DMA30P1600HB

IXYS

DIODE GEN PURP 1.6KV 30A TO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
• Capacitance @ Vr, F: 11pF @ 400V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

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IXTP48N20TM

IXYS

MOSFET N-CH 200V 48A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: -

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