Microsemi Corporation Produkte

MRF8372R1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

TAN500

Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 75V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9dB
• Power - Max: 2500W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 50A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55ST
• Supplier Device Package: 55ST

Paket: 55ST

1N3319B

Microsemi Corporation

DIODE ZENER 20V 50W DO5

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 2.4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

Paket: DO-203AB, DO-5, Stud

1PMT4623E3/TR7

Microsemi Corporation

DIODE ZENER 4.3V 1W DO216

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1650 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

Paket: DO-216AA

2EZ180D2/TR8

Microsemi Corporation

DIODE ZENER 180V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 725 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

1N3005B

Microsemi Corporation

DIODE ZENER 100V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

Paket: DO-203AA, DO-4, Stud

CDLL4483

Microsemi Corporation

DIODE ZENER 56V 1.5W DO213AB

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 44.8V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

Paket: DO-213AB, MELF

1N3522A

Microsemi Corporation

DIODE ZENER 15V 500MW DO35

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

SMBJ5919A/TR13

Microsemi Corporation

DIODE ZENER 5.6V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paket: DO-214AA, SMB

2EZ19D10E3/TR8

Microsemi Corporation

DIODE ZENER 19V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 19V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 14.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

SMBJ4731E3/TR13

Microsemi Corporation

DIODE ZENER 4.3V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paket: DO-214AA, SMB

JAN1N6621

Microsemi Corporation

DIODE GEN PURP 440V 2A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 440V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 500nA @ 440V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: A, Axial

JANTXV1N5807URS

Microsemi Corporation

DIODE GEN PURP 50V 3A BPKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

UPS180/TR7

Microsemi Corporation

DIODE SCHOTTKY 1A 80V POWERMITE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paket: -

M2S025-FCSG325

Microsemi Corporation

IC FPGA SOC 25K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 25K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

Paket: 325-TFBGA

AGL1000V2-FG256T

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 24576
• Total RAM Bits: 147456
• Number of I/O: 177
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

Paket: 256-LBGA

AGLN030V5-ZUCG81I

Microsemi Corporation

IC FPGA 66 I/O 81UCSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 768
• Total RAM Bits: -
• Number of I/O: 66
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 81-WFBGA, CSBGA
• Supplier Device Package: 81-UCSP (4x4)

Paket: 81-WFBGA, CSBGA

A3P060-CSG121I

Microsemi Corporation

IC FPGA 96 I/O 121CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 18432
• Number of I/O: 96
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 121-VFBGA, CSBGA
• Supplier Device Package: 121-CSP (6x6)

Paket: 121-VFBGA, CSBGA

A1425A-VQ100C

Microsemi Corporation

IC FPGA 83 I/O 100VQFP

• Number of LABs/CLBs: 310
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 2500
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

Paket: 100-TQFP

M7A3P1000-2FGG484I

Microsemi Corporation

IC FPGA 300 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 300
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

Paket: 484-BGA

M2GL060-1FCS325I

Microsemi Corporation

IC FPGA 200 I/O 325FCBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 200
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

Paket: 325-TFBGA

M2GL060T-FCSG325

Microsemi Corporation

IC FPGA 200 I/O 325FCBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 200
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 324-LFBGA, CSPBGA
• Supplier Device Package: 325-CSBGA (11x11)

Paket: 324-LFBGA, CSPBGA

MXPLAD15KP48CAE3

Microsemi Corporation

TVS DIODE 48VWM 77.4VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 195A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

LC51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO202AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 18.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-202AA (DO-13)

Paket: DO-13

MPLAD6.5KP11CAE3

Microsemi Corporation

TVS DIODE 11VWM 18.2VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 358A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

5KP75CE3/TR13

Microsemi Corporation

TVS DIODE 75VWM 134VC P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 75V
• Voltage - Breakdown (Min): 83.3V
• Voltage - Clamping (Max) @ Ipp: 134V
• Current - Peak Pulse (10/1000µs): 37.3A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

Paket: P600, Axial

5KP48AE3/TR13

Microsemi Corporation

TVS DIODE 48VWM 77.4VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 64.6A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

Paket: P600, Axial

BR231D-450B3-28V-009L

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

Paket: -