Microsemi Corporation Produkte

APT33N90JCCU2

Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 33A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

APT18F60B

Microsemi Corporation

MOSFET N-CH 600V 18A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 335W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

Paket: TO-247-3

APTM10DSKM19T3G

Microsemi Corporation

MOSFET 2N-CH 100V 70A SP3

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Power - Max: 208W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

Paket: SP3

1N4729PE3/TR8

Microsemi Corporation

DIODE ZENER 3.6V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

SMBG5955A/TR13

Microsemi Corporation

DIODE ZENER 180V 2W SMBG

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

Paket: DO-215AA, SMB Gull Wing

1N5338/TR12

Microsemi Corporation

DIODE ZENER 5.1V 5W T18

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

Paket: T-18, Axial

JANTX1N5525C-1

Microsemi Corporation

DIODE ZENER 6.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

Paket: DO-204AH, DO-35, Axial

JAN1N4473US

Microsemi Corporation

DIODE ZENER 22V 1.5W D-5A

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 17.6V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A

Paket: SQ-MELF, A

JANTX1N4619UR-1

Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 400nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

Paket: DO-213AA

JAN1N6349

Microsemi Corporation

DIODE ZENER 110V 500MW DO35

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 84V
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

CDLL4741A

Microsemi Corporation

DIODE ZENER 11V DO213AB

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

Paket: DO-213AB, MELF

1PMT5949/TR7

Microsemi Corporation

DIODE ZENER 100V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

Paket: DO-216AA

1N4245

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: A, Axial

MT9045ANR1

Microsemi Corporation

IC SYNCHRONIZER T1/E1/OC3 48SSOP

• Function: Digital Phase Locked Loop
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 50mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: 48-SSOP

Paket: 48-BSSOP (0.295", 7.50mm Width)

A2F060M3E-CSG288I

Microsemi Corporation

IC FPGA 60K GATES 128KB 288-CSP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 128KB
• RAM Size: 16KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 60K Gates, 1536D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 288-TFBGA, CSPBGA
• Supplier Device Package: 288-CSP (11x11)

Paket: 288-TFBGA, CSPBGA

AGL1000V2-FGG256

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 24576
• Total RAM Bits: 147456
• Number of I/O: 177
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

Paket: 256-LBGA

ZL30143GGG

Microsemi Corporation

IC SONET/SDH SYNCH 100LFBGA

• PLL: Yes
• Main Purpose: Ethernet, SONET/SDH, Stratum
• Input: Clock
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 13:14
• Differential - Input:Output: No/Yes
• Frequency - Max: 622.08MHz
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 100-FBGA
• Supplier Device Package: 100-CABGA (9x9)

Paket: 100-FBGA

M15KP240A

Microsemi Corporation

TVS DIODE 240VWM 388VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 240V
• Voltage - Breakdown (Min): 267V
• Voltage - Clamping (Max) @ Ipp: 388V
• Current - Peak Pulse (10/1000µs): 39A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

Paket: DO-204AR, Axial

MXLSMBJSAC26

Microsemi Corporation

TVS DIODE 26VWM 42.3VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.3V
• Current - Peak Pulse (10/1000µs): 11.1A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 30pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paket: DO-214AA, SMB

MXLPLAD30KP280AE3

Microsemi Corporation

TVS DIODE 280VWM 451VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 280V
• Voltage - Breakdown (Min): 311V
• Voltage - Clamping (Max) @ Ipp: 451V
• Current - Peak Pulse (10/1000µs): 66A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

MAPLAD18KP12CA

Microsemi Corporation

TVS DIODE 19.9VC 905A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 905A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

ICT-22

Microsemi Corporation

TVS DIODE 22VWM 32VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 25.9V
• Voltage - Clamping (Max) @ Ipp: 32V
• Current - Peak Pulse (10/1000µs): 40A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

Paket: DO-13

MXLSMCJ36CAE3

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 25.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

MXLSMCJ26A

Microsemi Corporation

TVS DIODE 26VWM 42.1VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.1V
• Current - Peak Pulse (10/1000µs): 35.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

MASMLG70CA

Microsemi Corporation

TVS DIODE 70VWM 113VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 26.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

Paket: DO-215AB, SMC Gull Wing

MASMBJ8.5CA

Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14.4V
• Current - Peak Pulse (10/1000µs): 41.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paket: DO-214AA, SMB

SMAJ11CE3/TR13

Microsemi Corporation

TVS DIODE 11VWM 20.1VC SMAJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 20.1V
• Current - Peak Pulse (10/1000µs): 24.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: DO-214AC, SMA

MS2321A

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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