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Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager2.720 |
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Nexperia USA Inc. |
MOSFET N-CH 150V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager16.632 |
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Nexperia USA Inc. |
MOSFET N-CH 30V TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3907pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager34.878 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 67A LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Paket: SOT-1210, 8-LFPAK33 (5-Lead) |
Lager15.438 |
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Nexperia USA Inc. |
TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3
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Paket: SC-70, SOT-323 |
Lager5.760 |
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Nexperia USA Inc. |
TRANS PREBIAS PNP 250MW TO236AB
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager10.248 |
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Nexperia USA Inc. |
TRANS PREBIAS NPN/PNP SOT666
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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Paket: SOT-563, SOT-666 |
Lager3.936 |
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Nexperia USA Inc. |
DIODE ZENER 30V 500MW SOD323F
- Voltage - Zener (Nom) (Vz): 30V
- Tolerance: ±2%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 50nA @ 21V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
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Paket: SC-90, SOD-323F |
Lager5.360 |
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Nexperia USA Inc. |
DIODE ZENER 3V 320MW SOD323
- Voltage - Zener (Nom) (Vz): 3V
- Tolerance: ±2%
- Power - Max: 320mW
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
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Paket: SC-76, SOD-323 |
Lager6.832 |
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Nexperia USA Inc. |
DIODE ZENER 3V 500MW SOD80C
- Voltage - Zener (Nom) (Vz): 3V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80C
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Paket: DO-213AC, MINI-MELF, SOD-80 |
Lager4.144 |
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Nexperia USA Inc. |
DIODE ZENER 4.7V 400MW SOD323
- Voltage - Zener (Nom) (Vz): 4.7V
- Tolerance: ±2%
- Power - Max: 400mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 2µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
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Paket: SC-76, SOD-323 |
Lager6.432 |
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Nexperia USA Inc. |
DIODE ZENER 4.3V 250MW SOT23
- Voltage - Zener (Nom) (Vz): 4.3V
- Tolerance: ±1%
- Power - Max: 250mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 3µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager26.616 |
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Nexperia USA Inc. |
DIODE GEN PURP 300V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 150nA @ 250V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
- Operating Temperature - Junction: 150°C (Max)
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager3.936 |
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Nexperia USA Inc. |
DIODE ARRAY GEN PURP 100V SOT363
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager4.176 |
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Nexperia USA Inc. |
IC GATE NOR 4CH 2-INP 14-TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Current - Quiescent (Max): 20µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.7 V ~ 0.8 V
- Logic Level - High: 1.7 V ~ 2 V
- Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Paket: 14-TSSOP (0.173", 4.40mm Width) |
Lager6.656 |
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Nexperia USA Inc. |
IC INVERTER HEX 5V TTL 14SOIC
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 1.2 V ~ 3.6 V
- Current - Quiescent (Max): 40µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.12 V ~ 0.8 V
- Logic Level - High: 1.08 V ~ 2 V
- Max Propagation Delay @ V, Max CL: 4.5ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SO
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Paket: 14-SOIC (0.154", 3.90mm Width) |
Lager15.396 |
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Nexperia USA Inc. |
IC GATE AND/OR 3-IN 6-XSON
- Logic Type: AND/OR Gate
- Number of Circuits: 1
- Number of Inputs: 3 Input (2, 1)
- Schmitt Trigger Input: No
- Output Type: Single-Ended
- Current - Output High, Low: 4mA, 4mA
- Voltage - Supply: 0.8 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN
- Supplier Device Package: 6-XSON, SOT886 (1.45x1)
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Paket: 6-XFDFN |
Lager98.652 |
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Nexperia USA Inc. |
IC D-TYPE POS TRG SNGL 20TSSOP
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 130MHz
- Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 3pF
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager6.288 |
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Nexperia USA Inc. |
IC BUFFER/DVR 3ST DUAL 8VSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: 8-VSSOP, US8
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Paket: 8-VFSOP (0.091", 2.30mm Width) |
Lager3.616 |
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Nexperia USA Inc. |
IC TRANSCVR TRI-ST 8BIT 20TSSOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 32mA, 64mA
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager5.616 |
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Nexperia USA Inc. |
IC MUX/DEMUX 1X16 24DHVQFN
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 16:1
- Number of Circuits: 1
- On-State Resistance (Max): 120 Ohm
- Channel-to-Channel Matching (ΔRon): 6 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 10 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 45ns, 45ns
- -3db Bandwidth: 100MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 3.5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 24-VFQFN Exposed Pad
- Supplier Device Package: 24-DHVQFN (5.5x3.5)
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Paket: 24-VFQFN Exposed Pad |
Lager4.208 |
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Nexperia USA Inc. |
TVS DIODE 14VWM 23.2VC SOD123W
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 14V
- Voltage - Breakdown (Min): 15.6V
- Voltage - Clamping (Max) @ Ipp: 23.2V
- Current - Peak Pulse (10/1000µs): 17.2A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: CFP3
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Paket: SOD-123W |
Lager8.190 |
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Nexperia USA Inc. |
PZU3.0B1A-Q/SOD323/SOD2
- Voltage - Zener (Nom) (Vz): 2.93 V
- Tolerance: ±2%
- Power - Max: 320 mW
- Impedance (Max) (Zzt): 95 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
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Paket: - |
Lager8.970 |
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Nexperia USA Inc. |
TRANS PNP 45V 0.1A DFN1412D-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 360 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
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Paket: - |
Lager15.000 |
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Nexperia USA Inc. |
TRANS PREBIAS PNP 50V 0.1A 3DFN
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180 MHz
- Power - Max: 340 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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Paket: - |
Lager15.000 |
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Nexperia USA Inc. |
BZX58550-C9V1-Q/SOD523/SC-79
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±5%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 6.9 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
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Paket: - |
Lager8.937 |
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Nexperia USA Inc. |
TRANS PREBIAS PNP 50V 0.1A 3DFN
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180 MHz
- Power - Max: 340 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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Paket: - |
Lager15.000 |
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Nexperia USA Inc. |
DIODE GP 120V 3A SOD128/CFP5
- Diode Type: SiGe (Silicon Germanium)
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11 ns
- Current - Reverse Leakage @ Vr: 30 nA @ 120 V
- Capacitance @ Vr, F: 103pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Operating Temperature - Junction: 175°C
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Paket: - |
Lager6.351 |
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