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NXP Produkte - Dioden - Gleichrichter - Einzeln

Aufzeichnungen 70
Page  2/3
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BY359X-1500,127
NXP

DIODE GEN PURP 1.5KV 10A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 600ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager2.320
1500V
10A (DC)
1.8V @ 20A
Standard Recovery >500ns, > 200mA (Io)
600ns
100µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY329X-1500,127
NXP

DIODE GEN PURP 1.5KV 6A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 230ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager5.952
1500V
6A (DC)
1.45V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
230ns
-
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY329-1200,127
NXP

DIODE GEN PURP 1.2KV 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 1mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2
Lager6.752
1200V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
1mA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY329-1000,127
NXP

DIODE GEN PURP 1KV 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 1mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2
Lager6.528
1000V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
1mA @ 800V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY459X-1500,127
NXP

DIODE GEN PURP 1.5KV 12A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager6.640
1500V
12A (DC)
1.3V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY359X-1500S,127
NXP

DIODE GEN PURP 1.5KV 7A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager3.488
1500V
7A (DC)
2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
100µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY329X-1500S,127
NXP

DIODE GEN PURP 1.5KV 6A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager6.176
1500V
6A (DC)
1.6V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
PMEG2010AEK,115
NXP

DIODE SCHOTTKY 20V 1A SMT3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.464
20V
1A (DC)
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
70pF @ 5V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
1PS59SB10,115
NXP

DIODE SCHOTTKY 30V 200MA SMT3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
  • Operating Temperature - Junction: 125°C (Max)
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.208
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
125°C (Max)
BY229X-800,127
NXP

DIODE GEN PURP 600V 8A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager4.304
600V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-600,127
NXP

DIODE GEN PURP 500V 8A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 400µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager2.560
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-200,127
NXP

DIODE GEN PURP 150V 8A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 400µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2 Full Pack, Isolated Tab
Lager6.448
150V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 150V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229-600,127
NXP

DIODE GEN PURP 500V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 135ns
  • Current - Reverse Leakage @ Vr: 400µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-220-2
Lager6.656
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
PRLL5818,115
NXP

DIODE SCHOTTKY 30V 1A MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: 125°C (Max)
Paket: SOD-87
Lager2.928
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
50pF @ 4V, 1MHz
Surface Mount
SOD-87
MELF
125°C (Max)
BAT254,115
NXP

DIODE SCHOTTKY 30V 200MA SOD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-110
  • Supplier Device Package: SOD110
  • Operating Temperature - Junction: 125°C (Max)
Paket: SOD-110
Lager7.808
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOD-110
SOD110
125°C (Max)
BYD17K,135
NXP

DIODE AVALANCHE 800V 1.5A MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager2.560
800V
1.5A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
1µA @ 800V
21pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD77D,115
NXP

DIODE AVALANCHE 200V 850MA MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 850mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager2.912
200V
850mA
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
50pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD77B,115
NXP

DIODE AVALANCHE 100V 850MA MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 850mA
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager3.408
100V
850mA
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
50pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD37M,115
NXP

DIODE AVALANCHE 1KV 600MA MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager7.440
1000V
600mA
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
1µA @ 1000V
20pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD17J,115
NXP

DIODE AVALANCHE 600V 1.5A MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager6.256
600V
1.5A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
1µA @ 600V
21pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD17G,115
NXP

DIODE AVALANCHE 400V 1.5A MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager3.216
400V
1.5A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
1µA @ 400V
21pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BYD17D,115
NXP

DIODE AVALANCHE 200V 1.5A MELF

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager4.880
200V
1.5A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
1µA @ 200V
21pF @ 0V, 1MHz
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
BAS216,115
NXP

DIODE GEN PURP 75V 250MA SOD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-110
  • Supplier Device Package: SOD110
  • Operating Temperature - Junction: 150°C (Max)
Paket: SOD-110
Lager6.560
75V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-110
SOD110
150°C (Max)
1N914B,113
NXP

DIODE GEN PURP 100V 200MA ALF2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: ALF2
  • Operating Temperature - Junction: 175°C (Max)
Paket: DO-204AH, DO-35, Axial
Lager3.408
100V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
175°C (Max)
hot PRLL5819,115
NXP

DIODE SCHOTTKY 40V 1A MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: 125°C (Max)
Paket: SOD-87
Lager6.032
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
50pF @ 4V, 1MHz
Surface Mount
SOD-87
MELF
125°C (Max)
PRLL4001,115
NXP

DIODE GEN PURP 50V MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SOD-87
Lager2.384
50V
-
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Surface Mount
SOD-87
MELF
-65°C ~ 175°C
1N4148,143
NXP

DIODE GEN PURP 100V 200MA ALF2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: ALF2
  • Operating Temperature - Junction: 200°C (Max)
Paket: DO-204AH, DO-35, Axial
Lager6.512
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
200°C (Max)
1N4148,133
NXP

DIODE GEN PURP 100V 200MA ALF2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: ALF2
  • Operating Temperature - Junction: -
Paket: DO-204AH, DO-35, Axial
Lager6.832
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
-