Page 16 - Panasonic Electronic Components Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung | Heisener Electronics
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Panasonic Electronic Components Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung

Aufzeichnungen 560
Page  16/20
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
UNR921CJ0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
Paket: SC-89, SOT-490
Lager7.584
100mA
50V
-
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F1
UNR911DJ0L
Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
Paket: SC-89, SOT-490
Lager4.256
100mA
50V
47k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F1
UNR521W00L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 100MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
Paket: SC-70, SOT-323
Lager2.432
100mA
50V
-
100k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
100MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
UNR521T00L
Panasonic Electronic Components

TRANS PREBIAS NPN 150MW SMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
Paket: SC-70, SOT-323
Lager6.992
100mA
50V
22k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
UNR511T00L
Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
Paket: SC-70, SOT-323
Lager5.552
100mA
50V
22k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
150mW
Surface Mount
SC-70, SOT-323
SMini3-G1
UNR422200A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager6.192
500mA
50V
4.7k
4.7k
50 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
200MHz
300mW
Through Hole
NS-B1
NS-B1
UNR422100A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager3.376
500mA
50V
2.2k
2.2k
40 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
200MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421L00A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager7.728
100mA
50V
4.7k
4.7k
20 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421F00A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager3.408
100mA
50V
4.7k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421D00A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager6.960
100mA
50V
47k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421900A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager3.584
100mA
50V
1k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR42170RA
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager5.840
100mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421400A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager3.568
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR421100A
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager6.080
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR42100RA
Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager2.192
100mA
50V
47k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Through Hole
NS-B1
NS-B1
UNR412300A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: NS-B1
Paket: 3-SIP
Lager3.344
500mA
50V
10k
10k
60 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
200MHz
300mW
Through Hole
3-SIP
NS-B1
UNR412200A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: NS-B1
Paket: 3-SIP
Lager7.232
500mA
50V
4.7k
4.7k
50 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
200MHz
300mW
Through Hole
3-SIP
NS-B1
UNR412100A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: NS-B1
Paket: 3-SIP
Lager5.456
500mA
50V
2.2k
2.2k
40 @ 100mA, 10V
250mV @ 5mA, 100mA
1µA
200MHz
300mW
Through Hole
3-SIP
NS-B1
UNR411H00A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager2.128
100mA
50V
2.2k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Through Hole
NS-B1
NS-B1
UNR411900A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager4.288
100mA
50V
1k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Through Hole
NS-B1
NS-B1
UNR41160RA
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager4.064
100mA
50V
4.7k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Through Hole
NS-B1
NS-B1
UNR411100A
Panasonic Electronic Components

TRANS PREBIAS PNP 300MW NS-B1

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: NS-B1
  • Supplier Device Package: NS-B1
Paket: NS-B1
Lager7.872
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Through Hole
NS-B1
NS-B1
UNR31A900L
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
Paket: SOT-723
Lager7.728
80mA
50V
1k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
100mW
Surface Mount
SOT-723
SSSMini3-F1
UNRF2A700A
Panasonic Electronic Components

TRANS PREBIAS NPN 100MW ML3-N2

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: ML3-N2
Paket: SC-101, SOT-883
Lager3.376
80mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
100mW
Surface Mount
SC-101, SOT-883
ML3-N2
UNR32AB00L
Panasonic Electronic Components

TRANS PREBIAS NPN 100MW SSSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
Paket: SOT-723
Lager5.136
80mA
50V
100k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
100mW
Surface Mount
SOT-723
SSSMini3-F1
hot UNR31AM00L
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
Paket: SOT-723
Lager83.760
80mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
100mW
Surface Mount
SOT-723
SSSMini3-F1
UNRF1A400A
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW ML3-N2

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: ML3-N2
Paket: SC-101, SOT-883
Lager6.352
80mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
100mW
Surface Mount
SC-101, SOT-883
ML3-N2
UNR32AN00L
Panasonic Electronic Components

TRANS PREBIAS NPN 100MW SSSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
Paket: SOT-723
Lager7.680
80mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
100mW
Surface Mount
SOT-723
SSSMini3-F1