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Toshiba Semiconductor and Storage Produkte - Dioden - Gleichrichter - Einzeln

Aufzeichnungen 267
Page  5/10
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot CMS05(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 30V
  • Capacitance @ Vr, F: 330pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: SOD-128
Lager66.468
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 30V
330pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS04(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 30V
  • Capacitance @ Vr, F: 330pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: SOD-128
Lager373.026
30V
5A
370mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 30V
330pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
hot CMS01(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: SOD-128
Lager3.360
30V
3A
370mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 30V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
hot CMS11(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 95pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: SOD-128
Lager180.000
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
95pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
hot CMS06(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Capacitance @ Vr, F: 130pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: SOD-128
Lager11.208
30V
2A
370mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
130pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
hot CRH01(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A SFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: SOD-123F
Lager36.000
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
hot CRS04(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 47pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: SOD-123F
Lager552.312
40V
1A
510mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
47pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CUS10S30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 135pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
Paket: SC-76, SOD-323
Lager272.994
30V
1A
230mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
135pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS387,L3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
Paket: SC-79, SOD-523
Lager626.046
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
3pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
125°C (Max)
TRS4E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A TO-220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 55 µA @ 650 V
  • Capacitance @ Vr, F: 263pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C
Paket: -
Lager1.155
650 V
4A
1.35 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
55 µA @ 650 V
263pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C
1SS372-TE85L-F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA USM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 10 V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
  • Operating Temperature - Junction: 125°C (Max)
Paket: -
Lager30.075
10 V
100mA
500 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
20 µA @ 10 V
20pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
USM
125°C (Max)
CMF03-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 900V 500MA M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: -
Lager8.283
900 V
500mA
2.5 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
50 µA @ 900 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
JDH2S02SL-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 10MA SL2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 10mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
  • Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SL2
  • Operating Temperature - Junction: 125°C (Max)
Paket: -
Lager12.780
10 V
10mA
-
Small Signal =< 200mA (Io), Any Speed
-
25 µA @ 500 mV
0.25pF @ 200mV, 1MHz
Surface Mount
2-SMD, No Lead
SL2
125°C (Max)
CMG05-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMH07-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 2A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Lager3.903
200 V
2A
980 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
10 µA @ 200 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CUHS20S60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 2A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 650 µA @ 60 V
  • Capacitance @ Vr, F: 290pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C
Paket: -
Lager23.373
60 V
2A
530 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
650 µA @ 60 V
290pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C
CRS20I30B-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager9.000
30 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
82pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CMS10I40A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 62pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager9.000
40 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
62pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
TRS4E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 4A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 16pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
Paket: -
Request a Quote
650 V
4A
1.6 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 650 V
16pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
CUHS15S60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1.5A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450 µA @ 60 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C
Paket: -
Lager8.694
60 V
1.5A
670 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
450 µA @ 60 V
130pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C
CUHS20S30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 390pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager117.438
30 V
2A
410 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
390pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C (Max)
CMG07-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
400 V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
-
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-
CRG05-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Lager2.904
800 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRS15I40A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Request a Quote
40 V
1.5A
550 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 40 V
35pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CUHS15S30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C
Paket: -
Lager124.530
30 V
1.5A
430 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
200pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C
BAS516-L3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA ESC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager208.320
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
200 nA @ 80 V
0.35pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
150°C (Max)
BAS516-H3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA ESC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager10.080
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
200 nA @ 80 V
0.35pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
150°C (Max)
CMS21-TE12L-Q-M
Toshiba Semiconductor and Storage

X35 PB-F DIODE M-FLAT MOQ=3000 V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager9.000
-
-
-
-
-
-
-
-
-
-
-