Page 2 - Toshiba Semiconductor and Storage Produkte - Transistoren - Bipolar (BJT) - HF

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC5088-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 500MHZ USQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	Paket: SC-82A, SOT-343	Lager5.760	12V	7GHz	1dB @ 500MHz	18dB	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-82A, SOT-343	USQ
2SC5096-R,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 10V 1GHz SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 1.4dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Paket: SC-75, SOT-416	Lager5.952	10V	10GHz	1.4dB @ 1GHz	1.4dB	100mW	50 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SC5086-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Paket: SC-75, SOT-416	Lager2.736	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
HN3C10FUTE85LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN US6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Paket: 6-TSSOP, SC-88, SOT-363	Lager3.120	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	80 @ 20mA, 10V	80mA	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6