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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 80A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.856 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 8A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager2.480 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 3A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.336 |
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Toshiba Semiconductor and Storage |
TRANS NPN 30V 0.5A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 150mW
- Frequency - Transition: 300MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager3.616 |
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Toshiba Semiconductor and Storage |
TRANSISTOR NPN S-MINI
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
- Gain: 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager100.962 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 4V 25MA FSC
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 25mA
- Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
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Paket: 2-SMD, Flat Lead |
Lager105.012 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.3V 300MA 4DFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 65µA ~ 78µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
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Paket: 4-UDFN Exposed Pad |
Lager5.968 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.95V 500MA 5DFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.95V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 55µA ~ 68µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Paket: 4-XDFN Exposed Pad |
Lager41.472 |
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Toshiba Semiconductor and Storage |
IC OCTAL D-TYPE LATCH 20VSSOP
- Logic Type: D-Type Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 1.65 V ~ 3.6 V
- Independent Circuits: 1
- Delay Time - Propagation: 1.5ns
- Current - Output High, Low: 24mA, 24mA
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-VFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 20-VSSOP
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Paket: 20-VFSOP (0.118", 3.00mm Width) |
Lager22.728 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 1CH 2-INP SMV
- Logic Type: NOR Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
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Paket: SC-74A, SOT-753 |
Lager22.356 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 16DIP
- Function: Master Reset
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 4
- Clock Frequency: 84MHz
- Max Propagation Delay @ V, Max CL: 26ns @ 6V, 150pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
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Paket: 16-DIP (0.300", 7.62mm) |
Lager7.968 |
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Toshiba Semiconductor and Storage |
IC BUFFER TRIPLE NON-INV US8
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 3
- Number of Bits per Element: 1
- Input Type: -
- Output Type: -
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: 8-SSOP
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Paket: 8-VFSOP (0.091", 2.30mm Width) |
Lager4.320 |
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Toshiba Semiconductor and Storage |
IC USB SWITCH SPST DUAL MP8
- Applications: -
- Multiplexer/Demultiplexer Circuit: 1:1
- Switch Circuit: SPST
- Number of Channels: 2
- On-State Resistance (Max): 10 Ohm
- Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: -
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-UFQFN
- Supplier Device Package: MP8
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Paket: 8-UFQFN |
Lager3.504 |
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Toshiba Semiconductor and Storage |
IC MCU 16BIT ROMLESS 100QFP
- Core Processor: 900/H
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: EBI/EMI, SIO, UART/USART
- Peripherals: DMA, WDT
- Number of I/O: 56
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 4x10b
- Oscillator Type: External
- Operating Temperature: -20°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 100-BFQFP
- Supplier Device Package: 100-QFP (14x14)
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Paket: 100-BFQFP |
Lager3.264 |
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Toshiba Semiconductor and Storage |
IC RF TXRX ISM<1GHZ 36-VFQFN
- Type: TxRx Only
- RF Family/Standard: General ISM < 1GHz
- Protocol: -
- Modulation: ASK, FSK
- Frequency: 315MHz, 434MHz, 868MHz, 915MHz
- Data Rate (Max): -
- Power - Output: 10dBm
- Sensitivity: -121dBm
- Memory Size: -
- Serial Interfaces: SPI
- GPIO: -
- Voltage - Supply: 2 V ~ 3.3 V, 2.4 V ~ 5.5 V
- Current - Receiving: 9.2mA ~ 11.1mA
- Current - Transmitting: 4.8mA ~ 12mA
- Operating Temperature: -40°C ~ 110°C
- Package / Case: 36-VFQFN Exposed Pad
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Paket: 36-VFQFN Exposed Pad |
Lager17.214 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET OUT 3MA 6-DIP
- Circuit: SPST-NC (1 Form B)
- Output Type: AC, DC
- On-State Resistance (Max): 25 Ohm
- Load Current: 150mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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Paket: 6-DIP (0.300", 7.62mm) |
Lager5.634 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 2.5KV TRIAC 6MFSOP
- Output Type: Triac
- Zero Crossing Circuit: Yes
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Voltage - Off State: 600V
- Static dV/dt (Min): 200V/µs
- Current - LED Trigger (Ift) (Max): 3mA
- Current - On State (It (RMS)) (Max): 70mA
- Current - Hold (Ih): 600µA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.4V
- Current - DC Forward (If) (Max): 20mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
- Supplier Device Package: 6-MFSOP, 4 Lead
- Approvals: UR
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Paket: 6-SOIC (0.173", 4.40mm Width) 4 Leads |
Lager3.436 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 300% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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Paket: 6-SMD (4 Leads), Gull Wing |
Lager8.820 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRVR SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2.5A, 2.5A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, CSA, cUL, UL, VDE
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Paket: 6-SOIC (0.295", 7.50mm Width) |
Lager6.282 |
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Toshiba Semiconductor and Storage |
X34 PB-F 74HC CMOS LOGIC IC SERI
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 3
- On-State Resistance (Max): 110 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm (Typ)
- Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 45ns, 59ns
- -3db Bandwidth: 200MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -90dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Paket: 16-SOIC (0.154", 3.90mm Width) |
Lager42.108 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14SOP
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Paket: 14-SOIC (0.154", 3.90mm Width) |
Lager38.484 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Paket: - |
Lager20.730 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 20A 8-SOPA
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 320 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Paket: - |
Lager9.000 |
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Toshiba Semiconductor and Storage |
OVER TEMP DETECTION IC IPTCO: 10
- Type: Thermal
- Number of Voltages Monitored: 1
- Output: Open Drain or Open Collector
- Reset: -
- Reset Timeout: 214µs Typical
- Voltage - Threshold: 0.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Paket: - |
Lager23.790 |
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Toshiba Semiconductor and Storage |
IC MULTIPLEXER QUAD 2-CH 16TSSOP
- Type: Multiplexer
- Circuit: 4 x 2:1
- Independent Circuits: 1
- Current - Output High, Low: 24mA, 24mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Paket: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IPD IC PS8 V=18 PD=0.7W F=1MHZ
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 1
- Ratio - Input:Output: -
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: Logic
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): 5V ~ 18V
- Current - Output (Max): -
- Rds On (Typ): 500mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: PS-8 (2.9x2.4)
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Paket: - |
Lager9.000 |
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