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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.984 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 180V TO220-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Paket: TO-220-3 Full Pack |
Lager2.464 |
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Toshiba Semiconductor and Storage |
TRANS NPN 3A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager2.480 |
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Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Paket: TO-220-3 Full Pack |
Lager3.552 |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 30V 550MHZ SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
- Gain: 17dB ~ 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Paket: SC-75, SOT-416 |
Lager72.000 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 120V 0.1A SMV
- Transistor Type: 2 NPN (Dual) Common Base
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Paket: SC-74A, SOT-753 |
Lager7.856 |
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Toshiba Semiconductor and Storage |
DIODE VARACTOR 10V ESC
- Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
- Capacitance Ratio: 2.3
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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Paket: SC-79, SOD-523 |
Lager395.268 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 10V US6
- Diode Configuration: 3 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 10V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager24.810 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA 5DFNB
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Paket: 4-XDFN Exposed Pad |
Lager88.992 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA 5DFNB
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Paket: 4-XDFN Exposed Pad |
Lager46.620 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.6V 200MA 4-SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.6V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 2µA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Paket: 4-XFDFN Exposed Pad |
Lager94.782 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 25HZIP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 34 V
- Operating Temperature: -30°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 25-SIP, Formed Leads
- Supplier Device Package: 25-HZIP
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Paket: 25-SIP, Formed Leads |
Lager90.780 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 28HSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
- Supplier Device Package: 28-HSOP
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Paket: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs |
Lager3.440 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48HTSSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
- Supplier Device Package: 48-HTSSOP
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Paket: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad |
Lager6.464 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48QFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2
- Applications: General Purpose
- Current - Output: 1.8A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Paket: 48-VFQFN Exposed Pad |
Lager23.358 |
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Toshiba Semiconductor and Storage |
IC FLASH 256GBIT 52MHZ 153WFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: MMC
- Clock Frequency: 52MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-WFBGA
- Supplier Device Package: 153-WFBGA (11.5x13)
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Paket: 153-WFBGA |
Lager6.944 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX QUAD 1:2 16-TSSOP
- Type: Multiplexer/Demultiplexer
- Circuit: 4 x 2:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Single Supply
- Voltage - Supply: 4 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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Paket: 16-TSSOP (0.173", 4.40mm Width) |
Lager2.000 |
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Toshiba Semiconductor and Storage |
IC POS TRG D-TYPE SGL 20TSSOP
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 150MHz
- Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Current - Quiescent (Iq): 10µA
- Input Capacitance: 7pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager5.040 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER DUAL N-INV SM8
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: SM8
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Paket: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Lager216.000 |
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Toshiba Semiconductor and Storage |
IC BUFF NON-INVERT 3.6V 20TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager29.268 |
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Toshiba Semiconductor and Storage |
OPTOISOLTR 2.5KV 4CH TRANS 16-SO
- Number of Channels: 4
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 400% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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Paket: 16-SOIC (0.179", 4.55mm Width) |
Lager3.150 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV 2CH PUSH PULL 8SO
- Number of Channels: 2
- Inputs - Side 1/Side 2: 2/0
- Voltage - Isolation: 2500Vrms
- Common Mode Transient Immunity (Min): 15kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 15MBd
- Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
- Rise / Fall Time (Typ): 5ns, 5ns
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 15mA
- Voltage - Supply: 3 V ~ 3.63 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager8.262 |
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Toshiba Semiconductor and Storage |
X34 LOAD SWITCH IC VIN:2.7-28V O
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSP (1.2x0.80)
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Paket: 6-UFBGA, WLCSP |
Lager105.270 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Paket: - |
Lager390 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 2A M-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Paket: - |
Lager3.903 |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 4A DFN8X8
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 55 µA @ 650 V
- Capacitance @ Vr, F: 263pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 4-DFN-EP (8x8)
- Operating Temperature - Junction: 175°C
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Paket: - |
Lager14.961 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q NPN + PNP BRT, Q1BSR=
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: - |
Lager18.000 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: - |
Lager9.000 |
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