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Toshiba Semiconductor and Storage Produkte

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TPCA8005-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 27A SOP-8 ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager4.224
TK16N60W,S1VF
Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager7.936
TPN2R703NL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A 8-TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager94.590
TK65E10N1,S1X
Toshiba Semiconductor and Storage

MOSFET N CH 100V 148A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager12.930
RN1113ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paket: SC-101, SOT-883
Lager6.016
RN1404S,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager29.490
RN1104,LF(CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 100MA SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: SC-75, SOT-416
Lager53.754
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6-PLN

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW, 210mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paket: 6-TSSOP, SC-88, SOT-363
Lager6.128
CLS03(TE16L,SQC,Q)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 345pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: L-FLAT?
Lager7.472
TCR3DF10,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.6V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 65µA ~ 78µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
Paket: SC-74A, SOT-753
Lager28.980
TBD62003APG
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16DIP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
Paket: 16-DIP (0.300", 7.62mm)
Lager17.616
TB6605FTG,EL
Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 36VQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: Parallel
  • Technology: Bi-CMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 9 V ~ 28 V
  • Voltage - Load: -
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-VFQFN Exposed Pad
  • Supplier Device Package: 36-VQFN (5x5)
Paket: 36-VFQFN Exposed Pad
Lager2.192
hot TC7SH08F,LJ
Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP SMV

  • Logic Type: AND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
Paket: SC-74A, SOT-753
Lager2.626.524
TL12W03-N(T30)
Toshiba Semiconductor and Storage

LED COOL WHITE 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K (4500K ~ 5650K)
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 100 lm (Typ)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 3.3V
  • Lumens/Watt @ Current - Test: 87 lm/W
  • CRI (Color Rendering Index): -
  • Current - Max: 500mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: -
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.089" (2.25mm)
Paket: 2-SMD, Flat Lead
Lager3.888
DF3A6.8LSU,LF
Toshiba Semiconductor and Storage

TVS DIODE

  • Type: -
  • Unidirectional Channels: -
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): -
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: -
  • Applications: -
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager59.130
hot DF3A6.8F,LF
Toshiba Semiconductor and Storage

TVS DIODE 5VWM S-MINI

  • Type: Zener
  • Unidirectional Channels: 2
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 6.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 45pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager302.400
TLP3114(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 250MA 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 3 Ohm
  • Load Current: 250mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 40 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
Paket: 4-SOP (0.173", 4.40mm)
Lager8.046
TLP3556(TP1,F)
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 1A 100V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 700 mOhm
  • Load Current: 1A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 100 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SMD (0.300", 7.62mm)
  • Supplier Device Package: 4-SMD
  • Relay Type: Relay
Paket: 4-SMD (0.300", 7.62mm)
Lager8.424
TLP192A(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUTPUT 6-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 2 Ohm
  • Load Current: 400mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SOP (0.173", 4.40mm)
  • Supplier Device Package: 6-SOP (2.54mm)
  • Relay Type: Relay
Paket: 6-SOP (0.173", 4.40mm)
Lager6.756
TLP292-4(V4LGB,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
Paket: 16-SOIC (0.179", 4.55mm Width)
Lager8.388
hot 74VHC244FT
Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 20TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
Paket: 20-TSSOP (0.173", 4.40mm Width)
Lager5.840
TLP7820(D4-A,E
Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: 5.5nA
  • Voltage - Input Offset: 900µV
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO
Paket: 8-SOIC (0.295", 7.50mm Width)
Lager7.680
TLP7920(D4-LF1,F
Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT SAFETY

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: 5.5nA
  • Voltage - Input Offset: 730µV
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: -
Paket: 8-SMD, Gull Wing
Lager7.472
1SV271TPH3F
Toshiba Semiconductor and Storage

RF DIODE PIN 50V USC

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 50 mA
  • Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
  • Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 125°C (TJ)
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
Paket: -
Request a Quote
CVJ10F30-LF
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 30V 1A UFV

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 1A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: UFV
Paket: -
Lager8.079
TCR2DG29-LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.12V @ 100mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 70 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLCSP
  • Supplier Device Package: 4-WCSP (0.79x0.79)
Paket: -
Request a Quote
TPCA8052-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: -
Lager42.255
TPHR6503PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager7.107