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Toshiba Semiconductor and Storage Produkte

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hot 2SK3068(TE24L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 12A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager15.324
TK46A08N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 46A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paket: TO-220-3 Full Pack, Isolated Tab
Lager5.696
TK5A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager3.392
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A CST3B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 215 mOhm @ 1A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3B
  • Package / Case: 3-SMD, No Lead
Paket: 3-SMD, No Lead
Lager85.272
2SD2129,ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paket: TO-220-3 Full Pack
Lager4.784
2SC2383-Y,T6KEHF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager7.088
2SC5233BTE85LF
Toshiba Semiconductor and Storage

TRANS NPN 12V 0.5A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
  • Power - Max: 100mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager4.096
RN2409,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.2W SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paket: TO-236-3, SC-59, SOT-23-3
Lager48.924
RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: SOT-563, SOT-666
Lager4.672
CRY75(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE ZENER 7.5V 700MW SFLAT

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±10%
  • Power - Max: 700mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 4.5V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
Paket: SOD-123F
Lager3.440
hot TCR2EN28,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA 4-SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
Paket: 4-XFDFN Exposed Pad
Lager211.728
TCK22912G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.1 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 31 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Over Temperature, Reverse Current, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
Paket: 6-UFBGA, WLCSP
Lager41.532
TB67S109AFTG,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1 ~ 1/32
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 47 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFQFN Exposed Pad
  • Supplier Device Package: 48-WQFN (7x7)
Paket: 48-WFQFN Exposed Pad
Lager207.768
TH58NVG5S0FTA20
Toshiba Semiconductor and Storage

IC EEPROM 32GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
Paket: 48-TFSOP (0.724", 18.40mm Width)
Lager8.292
TB2909FNG,EB
Toshiba Semiconductor and Storage

IC OPAMP AUDIO 1CH 16TSSOP

  • Type: Class AB
  • Output Type: 1-Channel (Mono)
  • Max Output Power x Channels @ Load: 3W x 1 @ 8 Ohm
  • Voltage - Supply: 6 V ~ 16 V
  • Features: Mute, Short-Circuit and Thermal Protection, Standby
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 110°C (TA)
  • Supplier Device Package: 16-HSSOP
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Paket: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Lager16.626
TD62503FG,EL
Toshiba Semiconductor and Storage

IC DRIVER DARL SNK 16SOP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 7/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SOP
Paket: 16-SOIC (0.173", 4.40mm Width)
Lager5.264
TLWNF1108(T11(O
Toshiba Semiconductor and Storage

LED WHITE 2SMD

  • Color: White
  • Configuration: -
  • Lens Color: -
  • Lens Transparency: -
  • Millicandela Rating: 3200mcd
  • Lens Style/Size: Oval with Flat Top
  • Voltage - Forward (Vf) (Typ): 3.5V
  • Current - Test: 40mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Wavelength - Dominant: -
  • Wavelength - Peak: -
  • Features: -
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: SMD
  • Size / Dimension: 3.20mm L x 2.90mm W
  • Height (Max): 2.10mm
Paket: 2-SMD, J-Lead
Lager2.520
TLP332(F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 6-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 1mA
  • Current Transfer Ratio (Max): 1200% @ 1mA
  • Turn On / Turn Off Time (Typ): 10µs, 8µs
  • Rise / Fall Time (Typ): 8µs, 8µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
Paket: 6-DIP (0.300", 7.62mm)
Lager6.408
TLP292(GR-TPL,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 300% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
Paket: 4-SOIC (0.179", 4.55mm)
Lager2.664
TLP292-4(LGBTP,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
Paket: 16-SOIC (0.179", 4.55mm Width)
Lager5.328
hot TLP250(F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8DIP

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 5kV/µs
  • Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): -
  • Current - Output High, Low: 500mA, 500mA
  • Current - Peak Output: 1.5A
  • Voltage - Forward (Vf) (Typ): 1.6V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -20°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Approvals: UR
Paket: 8-DIP (0.300", 7.62mm)
Lager124.056
hot TLP155E(TPL,E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 6SO-5

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 35ns, 15ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
  • Approvals: CSA, cUL, UL
Paket: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Lager28.440
hot 74HCT4052D
Toshiba Semiconductor and Storage

IC MUX/DEMUX DUAL 4X1 16SOIC

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 150 Ohm
  • Channel-to-Channel Matching (ΔRon): 6 Ohm
  • Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): ±1 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 60ns, 48ns
  • -3db Bandwidth: 180MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 2µA
  • Crosstalk: -60dB @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.154", 3.90mm Width)
Lager295.020
TC62D749CFNAG,C,EB
Toshiba Semiconductor and Storage

16 CHANNEL CONSTANT CURRENT LED

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.296
TC74AC138P(F)
Toshiba Semiconductor and Storage

IC DECODER 1 X 3:8 16DIP

  • Type: Decoder
  • Circuit: 1 x 3:8
  • Independent Circuits: 1
  • Current - Output High, Low: 75mA, 75mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
Paket: 16-DIP (0.300", 7.62mm)
Lager4.240
TB9061AFNG,EL
Toshiba Semiconductor and Storage

AUTOMOTIVE BLDC MOTOR CONTROLLER

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: Parallel
  • Technology: Bi-CMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 5.5V ~ 18V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 24-SSOP
Paket: 24-LSSOP (0.220", 5.60mm Width)
Lager21.168
TCR3UM09A,LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.273V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 580nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
Paket: 4-UDFN Exposed Pad
Lager100.920
TC9593XBG-EL
Toshiba Semiconductor and Storage

IC BRIDGE 64VFBGA

  • Type: Bridge
  • Applications: -
  • Mounting Type: Surface Mount
  • Package / Case: 64-VFBGA
  • Supplier Device Package: 64-VFBGA (6x6)
Paket: -
Lager22.488