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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.384 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)IS
- Package / Case: TO-3P-3, SC-65-3
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Paket: TO-3P-3, SC-65-3 |
Lager6.896 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 100A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5490pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.800 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.05A USM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 3V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70
- Package / Case: SC-70, SOT-323
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Paket: SC-70, SOT-323 |
Lager59.976 |
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Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager5.792 |
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Toshiba Semiconductor and Storage |
TRANS PNP 1A 230V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Paket: TO-220-3 Full Pack |
Lager3.536 |
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Toshiba Semiconductor and Storage |
TRANS PNP 230V 15A TO-3PL
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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Paket: TO-3PL |
Lager7.152 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 500NA VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Paket: SOT-723 |
Lager2.368 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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Paket: SC-70, SOT-323 |
Lager2.640 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Paket: SOT-563, SOT-666 |
Lager4.496 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
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Paket: TO-220-3 Full Pack |
Lager5.232 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 200MA ESV
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Paket: SOT-553 |
Lager27.618 |
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Toshiba Semiconductor and Storage |
IC GATE AND 4CH 2-INP 14-DIP
- Logic Type: AND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Supplier Device Package: 14-DIP
- Package / Case: 14-DIP (0.300", 7.62mm)
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Paket: 14-DIP (0.300", 7.62mm) |
Lager28.440 |
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Toshiba Semiconductor and Storage |
IC BUFFER SCHMIT TRIG 6SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: Schmitt Trigger
- Output Type: Push-Pull
- Current - Output High, Low: 32mA, 32mA
- Voltage - Supply: 1.65 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager208.686 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 400V 6SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 400 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Paket: 6-SOP (0.173", 4.40mm) |
Lager6.210 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 150% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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Paket: 4-SOIC (0.179", 4.55mm) |
Lager5.058 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV TRI-STATE SO6L
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 25kV/µs
- Input Type: DC
- Output Type: Tri-State
- Current - Output / Channel: 10mA
- Data Rate: 50MBd
- Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
- Rise / Fall Time (Typ): 2ns, 1ns
- Voltage - Forward (Vf) (Typ): 1.6V
- Current - DC Forward (If) (Max): 15mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
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Paket: 6-SOIC (0.295", 7.50mm Width) |
Lager13.836 |
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Toshiba Semiconductor and Storage |
IC INVERTER 6CH 6-INP 14DIP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 4µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Supplier Device Package: 14-DIP
- Package / Case: 14-DIP (0.300", 7.62mm)
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Paket: 14-DIP (0.300", 7.62mm) |
Lager5.920 |
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Toshiba Semiconductor and Storage |
TX FAMILY MCU
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I²C, SIO, SPI, UART/USART, USB
- Peripherals: DMA, WDT
- Number of I/O: 73
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 24K x 8
- Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
- Data Converters: A/D 12x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 105-LFBGA
- Supplier Device Package: 105-LFBGA (9×9)
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Paket: 105-LFBGA |
Lager20.184 |
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Toshiba Semiconductor and Storage |
NPN + PNP BRT Q1BSR22KOHM Q1BER4
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Paket: - |
Lager12.000 |
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Toshiba Semiconductor and Storage |
LDO REG, IOUT: 500MA VOUT: 3.3V
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): 13 µA
- Current - Supply (Max): -
- PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSPF (0.65x0.65)
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Paket: - |
Lager53.193 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Paket: - |
Lager7.692 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Power - Max: 1W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-µDFN (2x2)
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Paket: - |
Lager49.242 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Paket: - |
Lager26.871 |
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Toshiba Semiconductor and Storage |
DIODE ZENER 36V 700MW SFLAT
- Voltage - Zener (Nom) (Vz): 36 V
- Tolerance: ±10%
- Power - Max: 700 mW
- Impedance (Max) (Zzt): 30 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
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Paket: - |
Lager4.122 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Paket: - |
Lager21.660 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SC70
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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Paket: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A MFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Paket: - |
Request a Quote |
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