Toshiba Semiconductor and Storage Produkte

2SK2993(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SM
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

TK7P65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

2SA1837,S1CSF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paket: TO-220-3 Full Pack

2SC3324GRTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236

Paket: TO-236-3, SC-59, SOT-23-3

RN1114(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paket: SC-75, SOT-416

RN1306,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paket: SC-70, SOT-323

2SC5087-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-61AA
• Supplier Device Package: SMQ

Paket: SC-61AA

HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 120MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paket: 6-TSSOP, SC-88, SOT-363

RN1703JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

• Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paket: SOT-553

TC74HC573APF

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-DIP

• Logic Type: D-Type Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 6 V
• Independent Circuits: 1
• Delay Time - Propagation: 17ns
• Current - Output High, Low: 7.8mA, 7.8mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

Paket: 20-DIP (0.300", 7.62mm)

74HC4050D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 16SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 6
• Number of Bits per Element: 1
• Input Type: -
• Output Type: -
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

TLP179D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 50MA 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 50mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 200 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

Paket: 4-SOP (0.173", 4.40mm)

TB67B000FG,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC SENSOR

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad
• Supplier Device Package: 34-P-HSSOP

Paket: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad

TB62208FTG,C8,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC 40V/1.8A

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 1.8A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

Paket: 48-VFQFN Exposed Pad

74HC139D

Toshiba Semiconductor and Storage

IC DECODER/DEMUX DUAL 16SOIC

• Type: Decoder/Demultiplexer
• Circuit: 1 x 2:4
• Independent Circuits: 2
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

74HCT04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

Paket: 14-SOIC (0.154", 3.90mm Width)

TCR4DG25,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 2.5V IO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.347V @ 420mA
• Current - Output: 420mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

Paket: 4-XFBGA, CSPBGA

CMG07-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100 ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -

Paket: -

Request a Quote

TCR2LE09-LM-CT

Toshiba Semiconductor and Storage

PB-F WCSP4 CMOS LDO DDRULATOR

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.48V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paket: -

Request a Quote

TW015N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 15MO

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 11.7mA
• Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 431W (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: -

CRF02-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA S-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

TTA008B-Q

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126 PC=

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 1.5 W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126N

Paket: -

SSM3J35CT-L3F

Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 20V 100MA CST3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: CST3
• Package / Case: SC-101, SOT-883

Paket: -

RN2901-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paket: -

TCR3LM33A-RF

Toshiba Semiconductor and Storage

LDO IOUT: 300MA PD: 420MW VIN: 6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.251V @ 200mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 2.2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paket: -

TCR5RG09A-LF

Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT:0.9V A

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): 13 µA
• Current - Supply (Max): -
• PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSPF (0.65x0.65)

Paket: -

RN1410-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: -

TPD4164K-F

Toshiba Semiconductor and Storage

600V; IPD; 2A; HDIP30 INTELLIGEN

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: PWM
• Technology: IGBT
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 50V ~ 450V
• Operating Temperature: -40°C ~ 135°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 30-PowerDIP Module
• Supplier Device Package: 30-HDIP

Paket: -