Page 20 - Vishay Semiconductor Diodes Division Produkte - Dioden - Brückengleichrichter | Heisener Electronics
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Vishay Semiconductor Diodes Division Produkte - Dioden - Brückengleichrichter

Aufzeichnungen 1.132
Page  20/41
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot GBU8B-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 8A 100V GPP INLINE GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager15.000
Standard
100V
3.9A
1V @ 8A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BU1010-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
Paket: 4-SIP, BU
Lager6.240
Standard
1000V
3.2A
1.05V @ 5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
VS-2KBB60
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 1.9A D-37

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.9V
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, 2KBB
  • Supplier Device Package: 2KBB
Paket: 4-SIP, 2KBB
Lager4.576
Standard
600V
1.9A
1.1V @ 1.9V
10µA @ 600V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, 2KBB
2KBB
GBU4M-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 1000V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager2.512
Standard
1000V
3A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4G-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 400V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager2.336
Standard
400V
3A
1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4D-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager6.480
Standard
200V
3A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4B-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 100V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager7.984
Standard
100V
3A
1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU4K-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager26.460
Standard
800V
3A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4D-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager2.384
Standard
200V
3A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU4J-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager6.528
Standard
600V
3A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BU1008A-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
Paket: 4-SIP, BU
Lager6.416
Standard
800V
3A
1.1V @ 5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU1006A-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
Paket: 4-SIP, BU
Lager3.424
Standard
600V
3A
1.1V @ 5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
G5SBA80-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 6A 800V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager4.304
Standard
800V
2.8A
1.05V @ 3A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G5SBA60-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 6A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager3.136
Standard
600V
2.8A
1.05V @ 3A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G5SBA20-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 6A 200V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager5.312
Standard
200V
2.8A
1.05V @ 3A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G3SBA60L-M3/45
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager5.088
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G3SBA60-M3/45
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager4.208
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G2SB20-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 200V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager4.544
Standard
200V
1.5A
1V @ 750mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
G3SBA60L-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager5.424
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
G3SBA60-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
Paket: 4-SIP, GBU
Lager3.312
Standard
600V
2.3A
1V @ 2A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBL10-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 1000V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager5.808
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL08-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager7.168
Standard
800V
4A
1V @ 2A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL06-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager7.648
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL02-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 200V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager7.440
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL01-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 100V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager2.100
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL10-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 1000V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager2.640
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL08-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager2.336
Standard
800V
4A
1V @ 2A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL06-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager2.000
Standard
600V
4A
1.1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL