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Vishay Semiconductor Diodes Division Produkte - Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RMPG06JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: MPG06, Axial
Lager4.048
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RMPG06GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: MPG06, Axial
Lager5.312
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RMPG06DHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: MPG06, Axial
Lager6.880
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RMPG06BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: MPG06, Axial
Lager3.568
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RGP5100HE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
Paket: Axial
Lager5.504
1000V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5100-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
Paket: Axial
Lager2.768
1000V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5020HE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
Paket: Axial
Lager6.208
200V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5020-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
Paket: Axial
Lager2.208
200V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP30MHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager2.464
1000V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30KHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager2.400
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager2.448
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager4.192
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30DHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager7.280
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager3.680
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30AHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager3.376
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP25MHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 2.5A DO201

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager7.424
1000V
2.5A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP25KHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 2.5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager5.008
800V
2.5A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP25BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager5.536
100V
2.5A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP20JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager3.552
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20J-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager6.960
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager6.176
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20G-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager7.856
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20DHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager7.360
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20D-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager2.512
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager7.264
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20B-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager5.456
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20AHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager6.880
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
hot RGP20A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AA, DO-27, Axial
Lager7.500
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C