Page 4 - Vishay Semiconductor Diodes Division Produkte - Transistoren - IGBTs - Module

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VS-GB50LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 84A 431W SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 84A Power - Max: 431W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Paket: SOT-227-4, miniBLOC	Lager5.184	Single	1200V	84A	431W	2.8V @ 15V, 50A	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB100TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 735W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 735W Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 4.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Paket: INT-A-Pak	Lager4.992	Half Bridge	1200V	150A	735W	3.9V @ 15V, 100A	2mA	4.3nF @ 25V	Standard	No	-	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GB100DA60UP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 125A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Paket: SOT-227-4, miniBLOC	Lager7.840	Single	600V	125A	447W	2.8V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GA200SA60SP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Paket: SOT-227-4, miniBLOC	Lager3.504	Single	600V	-	781W	1.3V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GA200HS60S1PBF	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 480A Power - Max: 830W Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 32.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Paket: INT-A-Pak	Lager4.208	Half Bridge	600V	480A	830W	1.21V @ 15V, 200A	1mA	32.5nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W INT-A-PAK IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 220A Power - Max: 780W Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Paket: INT-A-Pak	Lager5.824	Half Bridge	600V	220A	780W	1.28V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100TS120UPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 182A 520W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 182A Power - Max: 520W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 18.67nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Paket: INT-A-Pak	Lager5.536	Half Bridge	1200V	182A	520W	3V @ 15V, 100A	1mA	18.67nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100NA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 100A 250W SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 250W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 7.4nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Paket: SOT-227-4, miniBLOC	Lager6.112	Single	600V	100A	250W	2.1V @ 15V, 50A	250µA	7.4nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-EMG050J60N	Vishay Semiconductor Diodes Division	IGBT 600V 88A 338W EMIPAK2 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 88A Power - Max: 338W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK2 Supplier Device Package: EMIPAK2	Paket: EMIPAK2	Lager3.776	Half Bridge	600V	88A	338W	2.1V @ 15V, 50A	100µA	9.5nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	EMIPAK2	EMIPAK2
VS-EMF050J60U	Vishay Semiconductor Diodes Division	IGBT 600V 88A 338W EMIPAK2 IGBT Type: - Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 88A Power - Max: 338W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK2 Supplier Device Package: EMIPAK2	Paket: EMIPAK2	Lager3.536	Three Level Inverter	600V	88A	338W	2.1V @ 15V, 50A	100µA	9.5nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	EMIPAK2	EMIPAK2
VS-CPV363M4KPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.74nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Paket: 19-SIP (13 Leads), IMS-2	Lager4.528	-	600V	11A	36W	2.1V @ 15V, 6A	250µA	0.74nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
GB35XF120K	Vishay Semiconductor Diodes Division	MODULE IGBT 1200V 35A ECONO2 6PK IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Power - Max: 284W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 3.475nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECONO2 Supplier Device Package: -	Paket: ECONO2	Lager6.144	Three Phase Inverter	1200V	50A	284W	3V @ 15V, 50A	100µA	3.475nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	ECONO2	-
50MT060ULS	Vishay Semiconductor Diodes Division	IGBT UFAST 600V 100A MTP IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 445W Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 14.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 10-MTP Supplier Device Package: 10-MTP	Paket: 10-MTP	Lager5.792	Single	600V	100A	445W	2.55V @ 15V, 100A	250µA	14.7nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	10-MTP	10-MTP
50MT060WH	Vishay Semiconductor Diodes Division	IGBT WARP 600V 114A MTP IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 114A Power - Max: 658W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A Current - Collector Cutoff (Max): 400µA Input Capacitance (Cies) @ Vce: 7.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: 12-MTP	Paket: 12-MTP Module	Lager4.672	Half Bridge	600V	114A	658W	3.2V @ 15V, 100A	400µA	7.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	12-MTP
GA200SA60S	Vishay Semiconductor Diodes Division	IGBT STD 600V 100A SOT227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 630W Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Paket: SOT-227-4, miniBLOC	Lager4.832	Single	600V	200A	630W	1.3V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
GA200SA60U	Vishay Semiconductor Diodes Division	IGBT UFAST 600V 100A SOT227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Paket: SOT-227-4, miniBLOC	Lager3.168	Single	600V	200A	500W	1.9V @ 15V, 100A	1mA	16.5nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
GA400TD25S	Vishay Semiconductor Diodes Division	IGBT FAST 250V 400A INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 250V Current - Collector (Ic) (Max): 400A Power - Max: 1350W Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 36nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	Paket: Dual INT-A-PAK (3 + 8)	Lager3.280	Half Bridge	250V	400A	1350W	1.6V @ 15V, 400A	500µA	36nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
CPV364M4F	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 15A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 27A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.2nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Paket: 19-SIP (13 Leads), IMS-2	Lager7.408	Three Phase Inverter	600V	27A	63W	1.6V @ 15V, 27A	250µA	2.2nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV363M4F	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 9A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Paket: 19-SIP (13 Leads), IMS-2	Lager3.600	Three Phase Inverter	600V	16A	36W	1.63V @ 15V, 16A	250µA	1.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GB300TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 530A 2119W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 530A Power - Max: 2119W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 25.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 4)	Lager3.776	Half Bridge	1200V	530A	2119W	3.6V @ 15V, 300A	5mA	25.3nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB300TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 500A 1645W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 4)	Lager5.024	Half Bridge	1200V	500A	1645W	2.45V @ 15V, 300A	5mA	21.2nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GT300FD060N	Vishay Semiconductor Diodes Division	IGBT 600V 379A 1250W DIAP IGBT Type: Trench Field Stop Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 379A Power - Max: 1250W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 23.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (4 + 8) Supplier Device Package: Dual INT-A-PAK	Paket: Dual INT-A-PAK (4 + 8)	Lager4.224	Three Level Inverter	600V	379A	1250W	2.5V @ 15V, 300A	250µA	23.3nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	Dual INT-A-PAK (4 + 8)	Dual INT-A-PAK
VS-GB400AH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 650A 2500W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 650A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (5)	Lager7.744	Single	1200V	650A	2500W	1.9V @ 15V, 400A (Typ)	5mA	30nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GT400TH60N	Vishay Semiconductor Diodes Division	IGBT 600V 530A 1600W DIAP IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 530A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30.8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 8)	Lager3.648	Half Bridge	600V	530A	1600W	2.05V @ 15V, 400A	5mA	30.8nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 8)	Double INT-A-PAK
VS-GB200TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 330A 1316W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 330A Power - Max: 1316W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 16.9nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 4)	Lager4.736	Half Bridge	1200V	330A	1316W	3.6V @ 15V, 200A	5mA	16.9nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB200TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 360A 1136W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 360A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 14.9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 4)	Lager2.720	Half Bridge	1200V	360A	1136W	2.35V @ 15V, 200A	5mA	14.9nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB300AH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 620A 2500W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 620A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (5)	Lager6.576	Single	1200V	620A	2500W	1.9V @ 15V, 300A (Typ)	5mA	21nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GB150TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 300A 1008W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1008W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 11nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Paket: Double INT-A-PAK (3 + 4)	Lager7.456	Half Bridge	1200V	300A	1008W	2.35V @ 15V, 150A	5mA	11nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK

VS-GB50LA120UX

Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 84A
Power - Max: 431W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

Paket: SOT-227-4, miniBLOC

Lager5.184

Single

1200V

84A

431W

2.8V @ 15V, 50A

50µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-GB100TP120U

Vishay Semiconductor Diodes Division

IGBT 1200V 150A 735W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 735W
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

Paket: INT-A-Pak

Lager4.992

Half Bridge

1200V

150A

735W

3.9V @ 15V, 100A

2mA

4.3nF @ 25V

Standard

No

-

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GB100DA60UP

Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 125A
Power - Max: 447W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

Paket: SOT-227-4, miniBLOC

Lager7.840

Single

600V

125A

447W

2.8V @ 15V, 100A

100µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-GA200SA60SP

Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

Paket: SOT-227-4, miniBLOC

Lager3.504

Single

600V

-

781W

1.3V @ 15V, 100A

1mA

16.25nF @ 30V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-GA200HS60S1PBF

Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 480A
Power - Max: 830W
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

Paket: INT-A-Pak

Lager4.208

Half Bridge

600V

480A

830W

1.21V @ 15V, 200A

1mA

32.5nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GA100TS60SFPBF

Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W INT-A-PAK

IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 220A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

Paket: INT-A-Pak

Lager5.824

Half Bridge

600V

220A

780W

1.28V @ 15V, 100A

1mA

16.25nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GA100TS120UPBF

Vishay Semiconductor Diodes Division

IGBT 1200V 182A 520W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 182A
Power - Max: 520W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 18.67nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

Paket: INT-A-Pak

Lager5.536

Half Bridge

1200V

182A

520W

3V @ 15V, 100A

1mA

18.67nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GA100NA60UP

Vishay Semiconductor Diodes Division

IGBT 600V 100A 250W SOT-227

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 7.4nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

Paket: SOT-227-4, miniBLOC

Lager6.112

Single

600V

100A

250W

2.1V @ 15V, 50A

250µA

7.4nF @ 30V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-EMG050J60N

Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 88A
Power - Max: 338W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Supplier Device Package: EMIPAK2

Paket: EMIPAK2

Lager3.776

Half Bridge

600V

88A

338W

2.1V @ 15V, 50A

100µA

9.5nF @ 30V

Standard

Yes

150°C (TJ)

Chassis Mount

EMIPAK2

VS-EMF050J60U

Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

IGBT Type: -
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 88A
Power - Max: 338W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Supplier Device Package: EMIPAK2

Paket: EMIPAK2

Lager3.536

Three Level Inverter

600V

88A

338W

2.1V @ 15V, 50A

100µA

9.5nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

EMIPAK2

VS-CPV363M4KPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11A
Power - Max: 36W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

Paket: 19-SIP (13 Leads), IMS-2

Lager4.528

-

600V

11A

36W

2.1V @ 15V, 6A

250µA

0.74nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

GB35XF120K

Vishay Semiconductor Diodes Division

MODULE IGBT 1200V 35A ECONO2 6PK

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Power - Max: 284W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 3.475nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECONO2
Supplier Device Package: -

Paket: ECONO2

Lager6.144

Three Phase Inverter

1200V

50A

284W

3V @ 15V, 50A

100µA

3.475nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

ECONO2

-

50MT060ULS

Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A MTP

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 445W
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 14.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 10-MTP
Supplier Device Package: 10-MTP

Paket: 10-MTP

Lager5.792

Single

600V

100A

445W

2.55V @ 15V, 100A

250µA

14.7nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

10-MTP

50MT060WH

Vishay Semiconductor Diodes Division

IGBT WARP 600V 114A MTP

IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 114A
Power - Max: 658W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Current - Collector Cutoff (Max): 400µA
Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: 12-MTP

Paket: 12-MTP Module

Lager4.672

Half Bridge

600V

114A

658W

3.2V @ 15V, 100A

400µA

7.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

12-MTP

GA200SA60S

Vishay Semiconductor Diodes Division

IGBT STD 600V 100A SOT227

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 630W
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

Lager4.832

Single

600V

200A

630W

1.3V @ 15V, 100A

1mA

16.25nF @ 30V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

GA200SA60U

Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A SOT227

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.5nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

Lager3.168

Single

600V

200A

500W

1.9V @ 15V, 100A

1mA

16.5nF @ 30V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

GA400TD25S

Vishay Semiconductor Diodes Division

IGBT FAST 250V 400A INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 250V
Current - Collector (Ic) (Max): 400A
Power - Max: 1350W
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 36nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (3 + 8)
Supplier Device Package: Dual INT-A-PAK

Paket: Dual INT-A-PAK (3 + 8)

Lager3.280

Half Bridge

250V

400A

1350W

1.6V @ 15V, 400A

500µA

36nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Dual INT-A-PAK (3 + 8)

Dual INT-A-PAK

CPV364M4F

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 15A IMS-2

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 27A
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.2nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

Paket: 19-SIP (13 Leads), IMS-2

Lager7.408

Three Phase Inverter

600V

27A

63W

1.6V @ 15V, 27A

250µA

2.2nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

CPV363M4F

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 9A IMS-2

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Power - Max: 36W
Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

Paket: 19-SIP (13 Leads), IMS-2

Lager3.600

Three Phase Inverter

600V

16A

36W

1.63V @ 15V, 16A

250µA

1.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

VS-GB300TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 530A 2119W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 530A
Power - Max: 2119W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 25.3nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 4)

Lager3.776

Half Bridge

1200V

530A

2119W

3.6V @ 15V, 300A

5mA

25.3nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB300TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 500A
Power - Max: 1645W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 4)

Lager5.024

Half Bridge

1200V

500A

1645W

2.45V @ 15V, 300A

5mA

21.2nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GT300FD060N

Vishay Semiconductor Diodes Division

IGBT 600V 379A 1250W DIAP

IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 379A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 23.3nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (4 + 8)
Supplier Device Package: Dual INT-A-PAK

Paket: Dual INT-A-PAK (4 + 8)

Lager4.224

Three Level Inverter

600V

379A

1250W

2.5V @ 15V, 300A

250µA

23.3nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

Dual INT-A-PAK (4 + 8)

Dual INT-A-PAK

VS-GB400AH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 650A 2500W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 650A
Power - Max: 2500W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 30nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (5)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (5)

Lager7.744

Single

1200V

650A

2500W

1.9V @ 15V, 400A (Typ)

5mA

30nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (5)

Double INT-A-PAK

VS-GT400TH60N

Vishay Semiconductor Diodes Division

IGBT 600V 530A 1600W DIAP

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 530A
Power - Max: 1600W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 30.8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 8)

Lager3.648

Half Bridge

600V

530A

1600W

2.05V @ 15V, 400A

5mA

30.8nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 8)

Double INT-A-PAK

VS-GB200TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 330A 1316W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 330A
Power - Max: 1316W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 16.9nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 4)

Lager4.736

Half Bridge

1200V

330A

1316W

3.6V @ 15V, 200A

5mA

16.9nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB200TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 360A 1136W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 360A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 14.9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 4)

Lager2.720

Half Bridge

1200V

360A

1136W

2.35V @ 15V, 200A

5mA

14.9nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB300AH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 620A 2500W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 620A
Power - Max: 2500W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (5)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (5)

Lager6.576

Single

1200V

620A

2500W

1.9V @ 15V, 300A (Typ)

5mA

21nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (5)

Double INT-A-PAK

VS-GB150TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 300A 1008W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1008W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 11nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

Paket: Double INT-A-PAK (3 + 4)

Lager7.456

Half Bridge

1200V

300A

1008W

2.35V @ 15V, 150A

5mA

11nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK