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Vishay Siliconix Produkte - Transistoren - FETs, MOSFETs - Arrays

Aufzeichnungen 749
Page  12/27
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI5515CDC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Paket: 8-SMD, Flat Lead
Lager12.288
Logic Level Gate
20V
4A
36 mOhm @ 6A, 4.5V
800mV @ 250µA
11.3nC @ 5V
632pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI3585DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paket: SOT-23-6 Thin, TSOT-23-6
Lager658.140
Logic Level Gate
20V
2A, 1.5A
125 mOhm @ 2.4A, 4.5V
600mV @ 250µA (Min)
3.2nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SI4214DDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager632.880
Logic Level Gate
30V
8.5A
19.5 mOhm @ 8A, 10V
2.5V @ 250µA
22nC @ 10V
660pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIA975DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC-70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paket: PowerPAK? SC-70-6 Dual
Lager3.506.892
Logic Level Gate
12V
4.5A
41 mOhm @ 4.3A, 4.5V
1V @ 250µA
26nC @ 8V
1500pF @ 6V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SIA778DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V/20V SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
  • Power - Max: 6.5W, 5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paket: PowerPAK? SC-70-6 Dual
Lager120.012
Logic Level Gate
12V, 20V
4.5A, 1.5A
29 mOhm @ 5A, 4.5V
1V @ 250µA
15nC @ 8V
500pF @ 6V
6.5W, 5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI4936CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager645.084
Logic Level Gate
30V
5.8A
40 mOhm @ 5A, 10V
3V @ 250µA
9nC @ 10V
325pF @ 15V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIB900EDK-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
Paket: PowerPAK? SC-75-6L Dual
Lager144.000
Logic Level Gate
20V
1.5A
225 mOhm @ 1.6A, 4.5V
1V @ 250µA
1.7nC @ 4.5V
-
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
SIB912DK-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
Paket: PowerPAK? SC-75-6L Dual
Lager7.440
Logic Level Gate
20V
1.5A
216 mOhm @ 1.8A, 4.5V
1V @ 250µA
3nC @ 8V
95pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
SI7994DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager7.712
Standard
30V
60A
5.6 mOhm @ 20A, 10V
3V @ 250µA
80nC @ 10V
3500pF @ 15V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SQJQ900E-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
  • Power - Max: 135W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 8 x 8 Dual
  • Supplier Device Package: PowerPAK? 8 x 8 Dual
Paket: PowerPAK? 8 x 8 Dual
Lager4.144
Standard
40V
100A (Tc)
3.9 mOhm @ 20A, 10V
2.5V @ 250µA
120nC @ 10V
5900pF @ 20V
135W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 8 x 8 Dual
PowerPAK? 8 x 8 Dual
hot SI6913DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paket: 8-TSSOP (0.173", 4.40mm Width)
Lager15.780
Logic Level Gate
12V
4.9A
21 mOhm @ 5.8A, 4.5V
900mV @ 400µA
28nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI4943BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 6.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager397.068
Logic Level Gate
20V
6.3A
19 mOhm @ 8.4A, 10V
3V @ 250µA
25nC @ 5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQJ960EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
  • Power - Max: 34W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager2.576
Logic Level Gate
60V
8A
36 mOhm @ 5.3A, 10V
2.5V @ 250µA
20nC @ 10V
735pF @ 25V
34W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SIZ920DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 40A PWRPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • Power - Max: 39W, 100W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
Paket: 6-PowerPair?
Lager110.244
Standard
30V
40A
7.1 mOhm @ 18.9A, 10V
2.5V @ 250µA
35nC @ 10V
1260pF @ 15V
39W, 100W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
SIZ914DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A PWRPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 40A
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
  • Power - Max: 22.7W, 100W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-PowerPair?
Paket: 8-WDFN Exposed Pad
Lager5.888
Logic Level Gate
30V
16A, 40A
6.4 mOhm @ 19A, 10V
2.4V @ 250µA
26nC @ 10V
1208pF @ 15V
22.7W, 100W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-PowerPair?
SQ4917EY-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2P-CH 60V 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.272
Standard
60V
8A (Tc)
48 mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQJ963EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2P-CH 60V SO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager7.520
Standard
60V
8A (Tc)
85 mOhm @ 3.5A, 10V
2.5V @ 250µA
40nC @ 10V
1140pF @ 30V
27W (Tc)
-55°C ~ 175°C (TA)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7214DN-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4.6A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
Paket: PowerPAK? 1212-8 Dual
Lager628.236
Logic Level Gate
30V
4.6A
40 mOhm @ 6.4A, 10V
3V @ 250µA
6.5nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI7913DN-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 5A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
Paket: PowerPAK? 1212-8 Dual
Lager49.020
Logic Level Gate
20V
5A
37 mOhm @ 7.4A, 4.5V
1V @ 250µA
24nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI7980DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
  • Power - Max: 19.8W, 21.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager4.976
Standard
20V
8A
22 mOhm @ 5A, 10V
2.5V @ 250µA
27nC @ 10V
1010pF @ 10V
19.8W, 21.9W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SQ4961EY-T1_GE3
Vishay Siliconix

MOSFET DUAL P-CHAN 60V SO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.840
Standard
60V
4.4A (Tc)
85 mOhm @ 3.5A, 10V
2.5V @ 250µA
40nC @ 10V
1140pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIZ902DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
  • Power - Max: 29W, 66W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair?
Paket: 8-PowerWDFN
Lager137.400
Logic Level Gate
30V
16A
12 mOhm @ 13.8A, 10V
2.2V @ 250µA
21nC @ 10V
790pF @ 15V
29W, 66W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair?
SQJ500AEP-T1_GE3
Vishay Siliconix

MOSFET N/P CHAN 40V SO8L DUAL

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager3.552
-
40V
30A (Tc)
27 mOhm @ 6A, 10V
2.3V @ 250µA
38.1nC @ 10V
1850pF @ 20V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI4948BEY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager61.188
Logic Level Gate
60V
2.4A
120 mOhm @ 3.1A, 10V
3V @ 250µA
22nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI9926CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.409.876
Logic Level Gate
20V
8A
18 mOhm @ 8.3A, 4.5V
1.5V @ 250µA
33nC @ 10V
1200pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI5902BDC-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 3.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Paket: 8-SMD, Flat Lead
Lager29.172
Logic Level Gate
30V
4A (Tc)
65 mOhm @ 3.1A, 10V
3V @ 250µA
7nC @ 10V
220pF @ 15V
3.12W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI4948BEY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager157.068
Logic Level Gate
60V
2.4A
120 mOhm @ 3.1A, 10V
3V @ 250µA
22nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4830CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.400
Logic Level Gate
30V
8A
20 mOhm @ 8A, 10V
3V @ 1mA
25nC @ 10V
950pF @ 15V
2.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO