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Vishay Siliconix Produkte - Transistoren - FETs, MOSFET - Einzeln

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Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SI5486DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PowerPak? ChipFet (3x1.9)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager386.400
MOSFET (Metal Oxide)
20V
12A (Tc)
1.8V, 4.5V
1V @ 250µA
54nC @ 8V
2100pF @ 10V
±8V
-
3.1W (Ta), 31W (Tc)
15 mOhm @ 7.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerPak? ChipFet (3x1.9)
8-PowerVDFN
SI5456DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PowerPak? ChipFet (3x1.9)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager7.024
MOSFET (Metal Oxide)
20V
12A (Tc)
4.5V, 10V
2.5V @ 250µA
30nC @ 10V
1200pF @ 10V
±20V
-
3.1W (Ta), 31W (Tc)
10 mOhm @ 9.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerPak? ChipFet (3x1.9)
8-PowerVDFN
hot SI5433BDC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.8A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
Paket: 8-SMD, Flat Lead
Lager72.000
MOSFET (Metal Oxide)
20V
4.8A (Ta)
1.8V, 4.5V
1V @ 250µA
22nC @ 4.5V
-
±8V
-
1.3W (Ta)
37 mOhm @ 4.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
SI5402BDC-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.9A 1206-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
Paket: 8-SMD, Flat Lead
Lager6.048
MOSFET (Metal Oxide)
30V
4.9A (Ta)
4.5V, 10V
3V @ 250µA
20nC @ 10V
-
±20V
-
1.3W (Ta)
35 mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
SI4654DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 28.6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.560
MOSFET (Metal Oxide)
25V
28.6A (Tc)
4.5V, 10V
2.5V @ 250µA
100nC @ 10V
3770pF @ 15V
±16V
-
2.5W (Ta), 5.9W (Tc)
4 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4484EY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 4.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager42.300
MOSFET (Metal Oxide)
100V
4.8A (Ta)
6V, 10V
2V @ 250µA (Min)
30nC @ 10V
-
±20V
-
1.8W (Ta)
34 mOhm @ 6.9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4470EY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.85W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager60.012
MOSFET (Metal Oxide)
60V
9A (Ta)
6V, 10V
2V @ 250µA (Min)
70nC @ 10V
-
±20V
-
1.85W (Ta)
11 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4446DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 3.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.384
MOSFET (Metal Oxide)
40V
3.9A (Ta)
4.5V, 10V
1.6V @ 250µA
12nC @ 4.5V
700pF @ 20V
±12V
-
1.1W (Ta)
40 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4418DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 2.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.720
MOSFET (Metal Oxide)
200V
2.3A (Ta)
6V, 10V
4V @ 250µA
30nC @ 10V
-
±20V
-
1.5W (Ta)
130 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4409DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager102.000
MOSFET (Metal Oxide)
150V
1.3A (Tc)
6V, 10V
4V @ 250µA
12nC @ 10V
332pF @ 50V
±20V
-
2.2W (Ta), 4.6W (Tc)
1.2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4403BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 7.3A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.984
MOSFET (Metal Oxide)
20V
7.3A (Ta)
1.8V, 4.5V
1V @ 350µA
50nC @ 5V
-
±8V
-
1.35W (Ta)
17 mOhm @ 9.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4104DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 4.6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager124.440
MOSFET (Metal Oxide)
100V
4.6A (Tc)
10V
4.5V @ 250µA
13nC @ 10V
446pF @ 50V
±20V
-
2.5W (Ta), 5W (Tc)
105 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI2327DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 200V 0.38A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.35 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager72.000
MOSFET (Metal Oxide)
200V
380mA (Ta)
6V, 10V
4.5V @ 250µA
12nC @ 10V
510pF @ 25V
±20V
-
750mW (Ta)
2.35 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI1470DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 5.1A SC-70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager111.000
MOSFET (Metal Oxide)
30V
5.1A (Tc)
2.5V, 4.5V
1.6V @ 250µA
7.5nC @ 5V
510pF @ 15V
±12V
-
1.5W (Ta), 2.8W (Tc)
66 mOhm @ 3.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SI1426DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 2.8A SC-70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager485.688
MOSFET (Metal Oxide)
30V
2.8A (Ta)
4.5V, 10V
2.5V @ 250µA
3nC @ 4.5V
-
±20V
-
1W (Ta)
75 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
SI1417EDH-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 2.7A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager4.544
MOSFET (Metal Oxide)
12V
2.7A (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
8nC @ 4.5V
-
±12V
-
1W (Ta)
85 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SI1406DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 3.1A SC-70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager558.000
MOSFET (Metal Oxide)
20V
3.1A (Ta)
1.8V, 4.5V
1.2V @ 250µA
7.5nC @ 4.5V
-
±8V
-
1W (Ta)
65 mOhm @ 3.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SI1405BDH-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 1.6A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager396.012
MOSFET (Metal Oxide)
8V
1.6A (Tc)
1.8V, 4.5V
950mV @ 250µA
5.5nC @ 4.5V
305pF @ 4V
±8V
-
1.47W (Ta), 2.27W (Tc)
112 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SI1307EDL-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 0.85A SC-70-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager405.756
MOSFET (Metal Oxide)
12V
850mA (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
5nC @ 4.5V
-
±8V
-
290mW (Ta)
290 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
hot SI1304BDL-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 0.9A SC-70-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager925.044
MOSFET (Metal Oxide)
30V
900mA (Tc)
2.5V, 4.5V
1.3V @ 250µA
2.7nC @ 4.5V
100pF @ 15V
±12V
-
340mW (Ta), 370mW (Tc)
270 mOhm @ 900mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
hot SI1300BDL-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 400MA SC-70-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 190mW (Ta), 200mW (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager577.224
MOSFET (Metal Oxide)
20V
400mA (Tc)
2.5V, 4.5V
1V @ 250µA
0.84nC @ 4.5V
35pF @ 10V
±8V
-
190mW (Ta), 200mW (Tc)
850 mOhm @ 250mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
hot SI1056X-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V SC-89-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
Paket: SOT-563, SOT-666
Lager36.696
MOSFET (Metal Oxide)
20V
-
1.8V, 4.5V
950mV @ 250µA
8.7nC @ 5V
400pF @ 10V
±8V
-
236mW (Ta)
89 mOhm @ 1.32A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
hot SI1039X-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 0.87A SC89

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 170mW (Ta)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
Paket: SOT-563, SOT-666
Lager36.000
MOSFET (Metal Oxide)
12V
870mA (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
6nC @ 4.5V
-
±8V
-
170mW (Ta)
165 mOhm @ 870mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
hot TP0610K-T1
Vishay Siliconix

MOSFET P-CH 60V 185MA SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager49.440
MOSFET (Metal Oxide)
60V
185mA (Ta)
4.5V, 10V
3V @ 250µA
1.7nC @ 15V
23pF @ 25V
±20V
-
350mW (Ta)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SI2323DS-T1
Vishay Siliconix

MOSFET P-CH 20V 3.7A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.208
MOSFET (Metal Oxide)
20V
3.7A (Ta)
1.8V, 4.5V
1V @ 250µA
19nC @ 4.5V
1020pF @ 10V
±8V
-
750mW (Ta)
39 mOhm @ 4.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2302ADS-T1
Vishay Siliconix

MOSFET N-CH 20V 2.1A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager94.812
MOSFET (Metal Oxide)
20V
2.1A (Ta)
2.5V, 4.5V
1.2V @ 50µA
10nC @ 4.5V
300pF @ 10V
±8V
-
700mW (Ta)
60 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2343DS-T1
Vishay Siliconix

MOSFET P-CH 30V 3.1A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager628.044
MOSFET (Metal Oxide)
30V
3.1A (Ta)
4.5V, 10V
3V @ 250µA
21nC @ 10V
540pF @ 15V
±20V
-
750mW (Ta)
53 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot SI2303BDS-T1
Vishay Siliconix

MOSFET P-CH 30V 1.49A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.008.200
MOSFET (Metal Oxide)
30V
1.49A (Ta)
4.5V, 10V
3V @ 250µA
10nC @ 10V
180pF @ 15V
±20V
-
700mW (Ta)
200 mOhm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3