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Vishay Siliconix Produkte

Aufzeichnungen 5.544
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SIE836DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (SH)
  • Package / Case: 10-PolarPAK? (SH)
Paket: 10-PolarPAK? (SH)
Lager7.456
hot SI1051X-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 1.2A SC89-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
Paket: SOT-563, SOT-666
Lager108.000
IRF540L
Vishay Siliconix

MOSFET N-CH 100V 28A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager6.192
hot IRFR9120TR
Vishay Siliconix

MOSFET P-CH 100V 5.6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager10.968
hot IRF540S
Vishay Siliconix

MOSFET N-CH 100V 28A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager85.212
hot SIHP12N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager2.000
hot SI4114DY-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 20A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager540.972
hot SI4124DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 20.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager263.184
SIHH11N60EF-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 11A POWERPAK8X8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 357 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 8 x 8
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager24.606
SISA24DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 60A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
Paket: PowerPAK? 1212-8
Lager53.184
SIHP15N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 15A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager17.448
hot IRF624SPBF
Vishay Siliconix

MOSFET N-CH 250V 4.4A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager41.208
hot SI3458BDV-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 4.1A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: SOT-23-6 Thin, TSOT-23-6
Lager695.616
hot SIA429DJT-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A SC-70

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
Paket: PowerPAK? SC-70-6
Lager191.076
SIZ720DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 16A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 16.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
Paket: 6-PowerPair?
Lager2.000
hot SI7922DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
Paket: PowerPAK? 1212-8 Dual
Lager15.468
DG418LDY-T1
Vishay Siliconix

IC ANALOG SWITCH CMOS 8SOIC

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 20 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 43ns, 31ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 5pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -71dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.072
hot DG301AAK/883
Vishay Siliconix

IC SWITCH SPST 14CERDIP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 50 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 300ns, 250ns
  • -3db Bandwidth: -
  • Charge Injection: 8pC
  • Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -74dB @ 500kHz
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Package / Case: 14-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 14-CERDIP
Paket: 14-CDIP (0.300", 7.62mm)
Lager16.800
hot DG9432DQ-T1-E3
Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 30 Ohm
  • Channel-to-Channel Matching (ΔRon): 300 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 35ns, 18ns
  • -3db Bandwidth: -
  • Charge Injection: 0.36pC
  • Channel Capacitance (CS(off), CD(off)): 7.5pF, 7.8pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -96dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager4.080
hot DG428DN
Vishay Siliconix

IC MUX ANLG 8CH W/LATCH 20PLCC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 150ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 11pF, 40pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 20-LCC (J-Lead)
  • Supplier Device Package: 20-PLCC (9x9)
Paket: 20-LCC (J-Lead)
Lager4.816
DG2731DQ-T1-E3
Vishay Siliconix

IC SWITCH 2XSPDT 400 MOHM 10MSOP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 450 mOhm
  • Channel-to-Channel Matching (ΔRon): 30 mOhm
  • Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 110ns, 30ns
  • -3db Bandwidth: -
  • Charge Injection: 9pC
  • Channel Capacitance (CS(off), CD(off)): 104pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -75dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-MSOP
Paket: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Lager2.672
DG2042DQ-T1-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 1.5 Ohm
  • Channel-to-Channel Matching (ΔRon): 300 mOhm (Max)
  • Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 42ns, 32ns
  • -3db Bandwidth: -
  • Charge Injection: 3pC
  • Channel Capacitance (CS(off), CD(off)): 26pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -93dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
Paket: 16-TSSOP (0.173", 4.40mm Width)
Lager2.512
DG403BDJ-E3
Vishay Siliconix

IC ANALOG SWITCH SPDT 16DIP

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 45 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 150ns, 100ns
  • -3db Bandwidth: -
  • Charge Injection: 60pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -94.8dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
Paket: 16-DIP (0.300", 7.62mm)
Lager9.324
DG413HSDY-T1-E3
Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 35 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 105ns, 80ns
  • -3db Bandwidth: -
  • Charge Injection: 22pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 250pA
  • Crosstalk: -88dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.154", 3.90mm Width)
Lager24.450
IRF640PBF-BE3
Vishay Siliconix

MOSFET N-CH 200V 18A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: -
Lager462
SIHP6N40D-BE3
Vishay Siliconix

N-CHANNEL 400V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: -
Lager2.940
SQ3427CEV-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 5.3A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
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SISF04DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD
  • Supplier Device Package: PowerPAK® 1212-8SCD
Paket: -
Lager18.000