Vishay Siliconix Produkte

2N4118A-2

Vishay Siliconix

MOSFET N-CH 40V 80UA TO-206AF

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 40V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
• Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-206AF (TO-72)

Paket: TO-206AF, TO-72-4 Metal Can

SIHW23N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 23A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD
• Package / Case: TO-247-3

Paket: TO-247-3

SI7601DN-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 16A 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
• Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

Paket: PowerPAK? 1212-8

SI3424BDV-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 8A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: SOT-23-6 Thin, TSOT-23-6

SIB800EDK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 1.5A SC75-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±6V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.1W (Ta), 3.1W (Tc)
• Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

Paket: PowerPAK? SC-75-6L

IRFIB8N50K

Vishay Siliconix

MOSFET N-CH 500V 6.7A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

IRLZ24S

Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL3302L

Vishay Siliconix

MOSFET N-CH 20V 39A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF740LC

Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

IRFP350LC

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

IRF620

Vishay Siliconix

MOSFET N-CH 200V 5.2A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

SI7636DP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paket: PowerPAK? SO-8

SQ7415AEN-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 16A 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 53W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

Paket: PowerPAK? 1212-8

SIB406EDK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A SC-75-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

Paket: PowerPAK? SC-75-6L

SI3442CDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 8A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: SOT-23-6 Thin, TSOT-23-6

SQR70090ELR_GE3

Vishay Siliconix

MOSFET N-CH 100V 86A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: D-PAK (TO-252)
• Package / Case: TO-252-4, DPak (3 Leads + Tab)

Paket: TO-252-4, DPak (3 Leads + Tab)

IRFIZ14GPBF

Vishay Siliconix

MOSFET N-CH 60V 8A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

IRFI520GPBF

Vishay Siliconix

MOSFET N-CH 100V 7.2A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

SI4936CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8SO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

SIP21107DR-25-E3

Vishay Siliconix

IC REG LINEAR 2.5V 150MA SC70-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
• Control Features: Enable, Power Good
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

Paket: 5-TSSOP, SC-70-5, SOT-353

DG3001DB-T1-E1

Vishay Siliconix

IC SWITCH SPST 6-MICRO FOOT

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 700 mOhm
• Channel-to-Channel Matching (ΔRon): 10 mOhm
• Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 71ns, 59ns
• -3db Bandwidth: -
• Charge Injection: 64pC
• Channel Capacitance (CS(off), CD(off)): 100pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -70dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-MICRO FOOT?CSP
• Supplier Device Package: 6-Micro Foot?

Paket: 6-MICRO FOOT?CSP

DG411LDY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST LV 16-SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 17 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 19ns, 12ns
• -3db Bandwidth: 280MHz
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -95dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

DG448DV-T1-E3

Vishay Siliconix

IC SWITCH SPST 25 OHM 6TSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 25 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 7 V ~ 36 V
• Voltage - Supply, Dual (V±): ±4.5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 130ns, 95ns
• -3db Bandwidth: -
• Charge Injection: 10pC
• Channel Capacitance (CS(off), CD(off)): 19pF, 8pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

Paket: SOT-23-6 Thin, TSOT-23-6

SQJ872EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 150V 24.5A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paket: -

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SI4462DY-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 1.15A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: -

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SIDR608DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 45V 51A/208A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 45 V
• Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8DC
• Package / Case: PowerPAK® SO-8

Paket: -

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SQJ412EP-T2_GE3

Vishay Siliconix

MOSFET N-CH 40V 32A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paket: -

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V30410-T1-GE3

Vishay Siliconix

MOSFET N-CH SMD

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

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