Vishay Siliconix Produkte

SUM110P08-11-E3

Vishay Siliconix

MOSFET P-CH 80V 110A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
• Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SUM47N10-24L-E3

Vishay Siliconix

MOSFET N-CH 100V 47A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI3451DV-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 2.8A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
• Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: SOT-23-6 Thin, TSOT-23-6

IRL2203STRL

Vishay Siliconix

MOSFET N-CH 30V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR9120TRR

Vishay Siliconix

MOSFET P-CH 100V 5.6A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SIHP24N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2656pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

SIE810DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 60A POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (L)
• Package / Case: 10-PolarPAK? (L)

Paket: 10-PolarPAK? (L)

SI7634BDP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paket: PowerPAK? SO-8

SIHB6N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI1413EDH-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 2.3A SC-70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

IRF620PBF

Vishay Siliconix

MOSFET N-CH 200V 5.2A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

SQD50P06-15L_GE3

Vishay Siliconix

MOSFET P-CH 60V 50A TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SI2301BDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 2.2A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

SIHP25N50E-GE3

Vishay Siliconix

MOSFET N-CH 500V 26A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

SIB410DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

Paket: PowerPAK? SC-75-6L

SI7110DN-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 13.5A 1212-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

Paket: PowerPAK? 1212-8

IRFR320TRPBF

Vishay Siliconix

MOSFET N-CH 400V 3.1A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SIS427EDN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
• Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

Paket: PowerPAK? 1212-8

SI6969BDQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4A 8TSSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4A
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 830mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

Paket: 8-TSSOP (0.173", 4.40mm Width)

SIB911DK-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.6A SC75-6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.6A
• Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-75-6L Dual
• Supplier Device Package: PowerPAK? SC-75-6L Dual

Paket: PowerPAK? SC-75-6L Dual

SI4914BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.4A 8-SOIC

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2.7W, 3.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

SI9122ADLP-T1-E3

Vishay Siliconix

IC REG CTRLR HALF-BRG MLP65-20

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive, Isolation Capable
• Topology: Half-Bridge
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 13.2 V
• Frequency - Switching: 500kHz
• Duty Cycle (Max): 92%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Current Limit, Sequencing, Soft Start
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: PowerPAK? MLP65-20
• Supplier Device Package: PowerPAK? MLP65-20

Paket: PowerPAK? MLP65-20

SIC431CED-T1-GE3

Vishay Siliconix

IC REG BUCK ADJ 24A POWERPAK

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 24V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 21.6V
• Current - Output: 24A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerWFQFN
• Supplier Device Package: PowerPAK® MLP44-24

Paket: -

SQJ444EP-T1_BE3

Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paket: -

SQ3495EV-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 8A 6TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5W (Tc)
• Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: -

SQJ403EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 30A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

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IRF9610STRRPBF

Vishay Siliconix

N-CHANNEL200V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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SQD50N04-09H-GE3

Vishay Siliconix

MOSFET N-CH 40V 50A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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