APEC: Microsemi's sample 1.2KV SiC MOSFET. | Heisener Electronics
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APEC: Microsemi's sample 1.2KV SiC MOSFET.

Technology Cover
Nach Datum: 2018-04-02
For harsh operations in industry, automotive and civil aviation, the SiC MOSFET family has avalanche ratings and high short-circuit withstand capability. Other members of the product family will be released in the coming months, including commercial and AEC-Q101 700V and 1.2kV Mosfet. "Microsemi's next-generation silicon carbide MOSFETs and new silicon carbide Schottky diodes have a highly repeatable, non-clamped inductive switching capability under rated current [UIC] design without degradation or failure. The MOSFET brings UIS capacity Keep it around 10-15J / cm2 and short-circuit protection of 3-5 microseconds, "the company said. Schottky diodes are designed with balanced inrush current, positive voltage, thermal resistance, and thermal capacity ratings to reduce switching losses at lower reverse currents. " MOSFETs and diodes can be used in the module. Application examples include hybrid and electric vehicle charging, conductive and inductive vehicle charging, DC-to-DC converters, electric vehicle powertrain and traction control, photovoltaic inverters, motor controllers, and aviation actuators.