New efficient On Semiconductor single N-channel equipment for data networks, telecommunications and industrial applications.
The device can provide ultra-low on-state resistance RDS (ON) value, thereby minimizing conduction losses and improving overall operating efficiency. They also have very low gate capacitance (Ciss), as low as 2,164pF, to ensure that driver losses are kept as low as possible.
At a rated breakdown voltage of 40V, ON Semiconductor ’s NTMFS5C404NLT, NTMFS5C410NLT and NTMFS5C442NLT MOSFETs have a maximum RDS (ON) value of 0.74mohm, 0.9mohm and 2.8mohm at VGS = 10V, VGS = 10V, continuous drain current 352A, 315A and 127A respectively. These are supplemented by NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, all of which have a rated breakdown voltage of 60V. The maximum RDS (ON) of these devices is 1.2mohm, 1.5mohm and 4.7mohm, respectively, and their associated continuous drain currents are 287A, 235A and 93A. Both 40V and 60V devices are rated to operate at a junction temperature of 175 ° C, which provides engineers with greater design heat dissipation space.
