Name: G2R1000MT17J
Brand: GeneSiC Semiconductor
SKU: G2R1000MT17J
Availability: InStock
Rating: 5 (155 reviews)

G2R1000MT17J

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Teilenummer	G2R1000MT17J
Hersteller	GeneSiC Semiconductor
Beschreibung	SIC MOSFET N-CH 3A TO263-7
Datenblatt
Paket	-
ECAD
Auf Lager	39.993 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Jan 9 - Jan 14 (Kies voor snelle verzending)
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G2R1000MT17J Spezifikationen

Hersteller	GeneSiC Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	G2R™
FET Typ	N-Channel
Technologie	SiCFET (Silicon Carbide)
Drain auf Source-Spannung (Vdss)	1700 V
Strom - Dauerablass (Id) @ 25 ° C	3A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	20V
Vgs (th) (Max) @ Id	4V @ 2mA
Gate Ladung (Qg) (Max) @ Vgs	-
Eingangskapazität (Ciss) (Max) @ Vds	139 pF @ 1000 V
Vgs (Max)	+20V, -10V
FET-Eigenschaft	-
Verlustleistung (Max)	54W (Tc)
Rds Ein (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Lieferantengerätepaket	TO-263-7
Paket / Fall	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G2R1000MT17J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G2R1000MT17J.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G2R1000MT17J

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