Name: G2R120MT33J-TR
Brand: GeneSiC Semiconductor
SKU: G2R120MT33J-TR
Availability: InStock
Rating: 5 (125 reviews)

G2R120MT33J-TR

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Teilenummer	G2R120MT33J-TR
Hersteller	GeneSiC Semiconductor
Beschreibung	3300V 120M TO-263-7 G2R SIC MOSF
Datenblatt
Paket	-
ECAD
Auf Lager	0 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Feb 15 - Feb 20 (Kies voor snelle verzending)
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G2R120MT33J-TR Spezifikationen

Hersteller	GeneSiC Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	LoRing™
FET Typ	N-Channel
Technologie	SiC (Silicon Carbide Junction Transistor)
Drain auf Source-Spannung (Vdss)	3300 V
Strom - Dauerablass (Id) @ 25 ° C	33A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	20V
Vgs (th) (Max) @ Id	3.5V @ 4mA
Gate Ladung (Qg) (Max) @ Vgs	130 nC @ 20 V
Eingangskapazität (Ciss) (Max) @ Vds	3009 pF @ 1000 V
Vgs (Max)	+20V, -5V
FET-Eigenschaft	-
Verlustleistung (Max)	366W (Tc)
Rds Ein (Max) @ Id, Vgs	156mOhm @ 15A, 20V
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Lieferantengerätepaket	TO-263-7
Paket / Fall	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G2R120MT33J-TR Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G2R120MT33J-TR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G2R120MT33J-TR

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